24 resultados para BISTABILITY
em Chinese Academy of Sciences Institutional Repositories Grid Portal
Resumo:
We investigate the steady-state optical bistability behavior in a three-level A-type atomic system closed by a microwave field under the condition that the applied fields are in resonance with corresponding atomic transitions. It is shown that the bistable hysteresis cycles can be controlled by both the amplitude and the phase of the microwave field. (c) 2006 Elsevier B.V. All rights reserved.
Resumo:
Optical bistability is reported in InP/GaInAsP equilateral-triangle-resonator (ETR) microlasers, which are fabricated by planar technology. For a 30 mu m side ETR microlaser with a 2-mu m-wide output waveguide connected to one of the vertices of the ETR, hysteresis loops are observed for the output power versus the injection current from 215 to 235 K. The laser output spectra are measured in the upper and lower states of the hysteresis loop, which show strong mode competition among transverse modes. The hysteresis loops are demonstrated by two-mode rate equations with asymmetric cross gain saturation and different output efficiencies. (C) 2009 Optical Society of America
Resumo:
Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-06-04T08:12:07Z No. of bitstreams: 1 InGaAsP-InP Bistability Triangle Microlasers.pdf: 305729 bytes, checksum: 9bfb7f71e2d39dc99bcee91b9a48de3c (MD5)
Resumo:
We reported the synthesis of CdS semiconductor nanoparticles using a simple one-pot reaction by thermolysis of cadmium acetylacetonate in dodecanethiol. Optical measurements of the as-obtained CdS nanoparticles revealed that their optical properties were closely related to surface effects. Based upon the cocktail of poly (N-vinylcarbazole) (PVK) and CdS nanoparticles, a bistable device was fabricated by a simple solution processing technique. Such a device exhibited a remarkable electrical bistability, which was attributed to the electric field-assisted charge transfer between PVK and the CdS nanoparticles capped by dodecaethiol. The conduction mechanism changed from an injection-controlled current to a bulk-controlled one during switching from OFF-state to ON-state.
OPTICAL BISTABILITY IN A GAAS/GAALAS MULTI-QUANTUM-WELL (MQW) SELF-ELECTROOPTIC EFFECT DEVICE (SEED)
Resumo:
Based on a GaAs/GaAlAs MQW pin structure grown by a home-made MBE system, we have successfully fabricated a SEED. The optical bistability and related properties of the device under symmetric operation (S-SEED) and asymmetric operation are reported.
Resumo:
An electrically bistable device has been fabricated using nanocomposite films consisting of silver nanoparticles and a semiconducting polymer by a simple spin-coating method. The current-voltage characteristics of the as-fabricated devices exhibit an obvious electrical bistability and negative differential resistance effect. The current ratio between the high-conducting state and low-conducting state can reach more than 103 at room temperature. The electrical bistability of the device is attributed to the electric-filed-induced charge transfer between the silver nanoparticles and the polymer, and the negative differential resistance behavior is related to the charge trapping in the silver nanoparticles. The results open up a simple approach to fabricate high quality electrically bistable devices by doping metal nanoparticles into polymer.
Resumo:
Many biological systems can switch between two distinct states. Once switched, the system remains stable for a period of time and may switch back to its original state. A gene network with bistability is usually required for the switching and stochastic effect in the gene expression may induce such switching. A typical bistable system allows one-directional switching, in which the switch from the low state to the high state or from the high state to the low state occurs under different conditions. It is usually difficult to enable bi-directional switching such that the two switches can occur under the same condition. Here, we present a model consisting of standard positive feedback loops and an extra negative feedback loop with a time delay to study its capability to produce bi-directional switching induced by noise. We find that the time delay in the negative feedback is critical for robust bi-directional switching and the length of delay affects its switching frequency.
Resumo:
The dynamic evolution of a A system coupled by two strong coherent fields is investigated by taking spontaneously generated coherence (SGC) into account. By numericaly simulation, it is shown that the relative phase of the two coherent fields affects significantly the time scale to the coherent population trapping state. In addition, an analytical expression to the evolution rate which is consistent with the numerical results is given. (c) 2005 Elsevier B.V. All rights reserved.
Resumo:
Coherent population accumulations of multiphoton transitions induced by an ultrashort pulse train in a two-level polar molecule are investigated theoretically by solving the density-matrix equations without invoking any of the standard approximations. It is shown due to the effects of permanent dipole moments, that the population accumulation of multiphoton transitions can be obtained in the polar molecule. Moreover, the population accumulations depend crucially on the relative phase between two sequential pulses, and the period in which the maximum population accumulation occurs is 2 pi/N in N-photon transitions.
Resumo:
The generation of attosecond pulses in a two-level system with permanent dipole moment is investigated. It is shown due to the presence of permanent dipole moments, that the plateau of the high-order harmonic generation spectrum can be extended to X-ray range. Moreover, attosecond pulses with higher intensity can be synthesized by using both even and odd harmonics because of their quantum interference. (c) 2006 Elsevier B.V. All rights reserved.
Resumo:
Mode competitions between modes with different output coupling efficiencies can result in optical bistability under certain asymmetric nonlinear gain. For a GaInAsP/InP equilateral triangle microlaser with the side length of 10 mu m, the drop of the output power with the increase of the injection current is observed corresponding to transverse mode transitions. Furthermore, the measured laser spectra up to 270 K show that lasing modes coexist with the wavelength interval of 39 nm at 240 K. The emission at 5.2 THz can be expected by the mode frequency beating with the 39 nm interval.
Resumo:
This paper reports that the structures of AlGaAs/InGaAs high electron mobility transistor (HEMT) and AlAs/GaAs resonant tunnelling diode (RTD) are epitaxially grown by molecular beam epitaxy ( MBE) in turn on a GaAs substrate. An Al0.24Ga0.76As chair barrier layer, which is grown adjacent to the top AlAs barrier, helps to reduce the valley current of RTD. The peak-to-valley current ratio of fabricated RTD is 4.8 and the transconductance for the 1-mu m gate HEMT is 125mS/mm. A static inverter which consists of two RTDs and a HEMT is designed and fabricated. Unlike a conventional CMOS inverter, the novel inverter exhibits self-latching property.