49 resultados para BENT METALLOCENES
em Chinese Academy of Sciences Institutional Repositories Grid Portal
Resumo:
Bis(methylcyclopentadienyl)chloro(alpha-naphthoyloxy)zirconium, (CH3C5H4)2Zr Cl(alpha-C10H7COO), has been synthesized by the reaction between (MeCp)2ZrCl2 and equimolar sodium alpha-naphthoate in toluene at room temperature. The molecular structure of the title complex was determined by X-ray diffraction. The molecules have a five-coordinate bent metallocene structure in which the alpha-naphthoxyligand is bidentate [Zr-O, 2.317(2), 2.260(2) angstrom]. The remaining distances are [Zr-Cl, 2.521(1) angstrom; Zr-C, 480-2, 565 angstrom; Zr-cent-CH3C5H4 2.217 and 2.230 angstrom].
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A method for accurate determination of the curvature radius of semiconductor thin films is proposed. The curvature-induced broadening of the x-ray rocking curve (XRC) of a heteroepitaxially grown layer can be determined if the dependence of the full width at half maximum (FWHM) of XRC is measured as a function of the width of incident x-ray beam. It is found that the curvature radii of two GaN films grown on a sapphire wafer are different when they are grown under similar MOCVD conditions but have different values of layer thickness. At the same time, the dislocation-induced broadening of XRC and thus the dislocation density of the epitaxial film can be well calculated after the curvature correction.
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地址: Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
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In this correspondence, we construct some new quadratic bent functions in polynomial forms by using the theory of quadratic forms over finite fields. The results improve some previous work. Moreover, we solve a problem left by Yu and Gong in 2006.
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DFB lasers with continuously and arbitrarily chirped gratings of ultrahigh spatial precision are implemented by a method we proposed recently, using bent waveguides on homogeneous grating fields. Choosing individual bending functions we generate special chirping functions and obtain additional degrees of freedom to tailor and improve specific device performances, We present two applications for lasers showing several improved device properties and the effectiveness of our method, First, we implement continuously distributed phase-shifted lasers, revealing a considerably reduced photon pile-up, higher single-longitudinal mode stability, higher output power, lower linewidth, and higher yield than conventional abruptly phase-shifted lasers, Second, a novel tuning principle is applied in chirped multiple-section DFB lasers, showing 5.5-nm wavelength tuning, without any gaps, maintaining high side-mode suppression.
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We have implemented and studied a new type of tunable multiple-section semiconductor distributed feedback (DFB) laser using tailored chirped DFB gratings. Arbitrarily and continuously chirped DFB gratings are defined by bent waveguides on homogeneous grating fields with ultrahigh spatial precision, The mathematical bending functions are optimized in this case to provide enlarged wavelength tuning ranges. We present the results of model calculations, the technological device realization and experimental results of the DFB laser characterization e.g. a tuning range of 5.5 mm without wavelength gaps and high side mode suppression ratio.
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Submonolayer thin films of a three-ring bent-core (that is, banana-shaped) compound, m-bis(4-n-octyloxystyryl)benzene (m-OSB), were prepared by the vacuum-deposition method, and their morphologies, structures, and phase behavior were investigated by atomic force microscopy (AFM) and transmission electron microscopy (TEM). The films have island shapes ranging from compact elliptic or circular patterns at low temperatures (below 40 degreesC) to branched patterns at high temperatures (above 60 degreesC). This shape evolution is contrary to the prediction based on the traditional diffusion-limited aggregation (DLA) theory. AFM observations revealed that two different mechanisms governed the film growth, in which the compact islands were formed via a dewetting-like behavior, while the branched islands diffusion-mediated. It is suggested m-OSB forms a two-dimensional, liquid crystal at the low-temperature substrate that is responsible for the unusual formation of compact islands. All of the monolayer islands are unstable and apt to transform to slender bilayer crystals at room temperature. This phase transition results from the peculiar molecular shape and packing of the bent-core molecules and is interpreted as escaping from macroscopic net polarization by the formation of an antiferroelectric alignment.
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The metallocene complexes ((BuC5H4)-Bu-t)(2)MCl2 (M=Ti (1a), Zr (1b), Hf (1c)) and (tBu2C5H3)(2)MCl2 (M=Ti (2a), Zr (2b), Hf (2c)) were synthesized by the react ions of Li (BuC5H4)-Bu-t and (LiBu2C5H3)-Bu-t with metal tetrachloride in THF solution. The complexes were characterized by their IR, H-1-NMR and EI-MS. The molecular structure of Ic was determined by X-ray single-crystal structure analysis. The complexes (1a similar to 2c) exhibited high activities for ethylene polymerizatin (up to 3.2x10(6) gPE/mol.h) in the presence of methylaluminoxane (MAO) at room temperature.
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Internal friction of nanocrystalline nickel is investigated by mechanical spectroscopy from 360 K to 120 K. Two relaxation peaks are found when nanocrystalline nickel is bent up to 10% strain at room temperature and fast cooling. However, these two peaks disappear when the sample is annealed at room temperature in vacuum for ten days. The occurrence and disappearance of the two relaxation peaks can be explained by the interactions of partial dislocations and point defects in nanocrystalline materials.
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强外加电场与大调制度在光折变效应的研究中已经得到了广泛应用。采用PDECOL算法, 严格求解光折变带输运方程, 得到外加电场时不同调制度下光折变晶体中随时间变化的空间电荷场、载流子浓度, 并讨论了外加电场对它们的影响。通过将物质方程与耦合波方程联立数值求解, 可得到光折变光栅形成过程中两波耦合增益系数以及光束条纹相位的变化。模拟结果表明, 在强外加电场作用下, 两束记录光之间的光强与相位耦合都得到了增强, 而原有的解析式忽视了强外加电场与大调制度对空间电荷场相位耦合的影响, 此时不再适用。同时发现折射率光
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利用啁啾光纤光栅的应变调谐特性,将色散补偿的啁啾光纤光栅斜贴于悬臂梁的侧面,通过应力实现啁啾量调整而改变其色散补偿量的大小,同时利用固定在同一悬臂梁的均匀布拉格光栅传感器,实现了闭环自动控制色散补偿量,研制出了一种新型的光纤光栅动态色散补偿仪。该色散补偿仪工作在1550nm波段,典型性能数据为:色散动态补偿范围-1000-1680ps/nm,插入损耗小于1.5dB,动态调谐步进响应时间小于50ms,基本上能满足10Gb/s光纤通信系统中色散动态补偿的要求。
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A novel actinomycete strain, designated CW 108(T), was isolated from a forest soil in Anhui Province, China. The cells were strictly aerobic, non-motile, bent rods. The strain grew optimally at 30-37 degrees C and pH 6.0-8.0. Chemotaxonomically, the pepti