19 resultados para BBO

em Chinese Academy of Sciences Institutional Repositories Grid Portal


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An optimal feedback control of broadband frequency up-conversion in BBO crystal is experimentally demonstrated by shaping femto-second laser pulses based on genetic algorithm, and the frequency up-conversion efficiency can be enhanced by similar to 16%. SPIDER results show that the optimal laser pulses have shorter pulse-width with the little negative chirp than the original pulse with the little positive chirp. By modulating the fundamental spectral phase with periodic square distribution on SLM-256, the frequency up-conversion can be effectively controlled by the factor of about 17%. The experimental results indicate that the broadband frequency up-conversion efficiency is related to both of second harmonic generation (SHG) and sum frequency generation (SFG), where the former depends on the fundamental pulse intensity, and the latter depends on not only the fundamental pulse intensity but also the fundamental pulse spectral phase. (c) 2006 Elsevier B.V. All rights reserved.

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用气相平衡扩散(VTE)法在α-偏硼酸钡单晶衬底上成功地制备出β-偏硼酸钡薄膜。使用X射线衍射技术(XRD)测试了样品的衍射峰,并比较了不同温度、不同保温时间、不同衬底方向对薄膜的影响。

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采用脉冲激光沉积法、选取β-BBO陶瓷作为靶材在掺Sr^2+的α-BBO(001)衬底上进行了生长β-BBO薄膜的实验,生长出表面光滑、无色透明的薄膜。采用X射线粉末衍射(XRD)、高分辨X射线衍射仪(XRC)对薄膜进行分析测试,结果表明,所制备的β-BBO薄膜择优取向为(001)面,薄膜的双晶摇摆曲线半峰宽值FWHM为1000"左方无显示出β-BBO薄膜较好的结晶质量,其紫外吸收边同β-BBO单晶一样也为190nm,但薄膜的透过率略有下降。采用调Q脉冲Nd:YAG激光器观察了β-BBO薄膜的倍频效应。

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采用液相外延法在掺Sr^2+的Q—BBO(001)衬底上制备了β-BBO薄膜,研究了制备条件对薄膜质量的影响.结果表明:当生长温度为810℃时,转速为300r/min生长的外延膜具有较高的结晶质量,且随着生长时间的延长,外延膜的结晶质量有所提高.β—BBO薄膜呈C轴高度择优取向,薄膜的双晶摇摆曲线半峰宽值FWHM仅为676.6”,表明β-BBO薄膜较好的结晶质量;在不具备相位匹配的条件下,β—BBO外延膜也能够实现二次谐波输出.

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采用气相传输平衡技术在掺Sr^2+的α-BBO(001)衬底上制备了β-BBO薄膜,研究了粉料配比、VTE处理温度以及恒温时间对薄膜质量的影响。结果表明,在适当的粉料配比、VTE处理温度以及恒温时间下,在Sr^2+:α-BBO晶片表层制备呈c轴高度择优取向的、没有第二相物质的β-BBO薄膜,其双晶摇摆曲线半峰宽值FWHM为1000",显示出β-BBO薄膜较好的结晶质量。并对气相传输平衡技术制备β-BBO薄膜的机理进行了初步的探讨。

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We observed and described some phenomena, which were that when a alpha-BBO crystal was irradiated by a focused femtosecond laser beam, the temperature effect happened in a minute area of focus, then the induced beta-BBO phase was separated within the minute area in the alpha-BBO crystal. (C) 2007 Elsevier B.V. All rights reserved.

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BBO晶体三次谐波转换过程中相位失配情况进行了研究。当BBO 晶体按Ⅰ类相位匹配(oo→e)进行三次谐波转换时,如果保持基频光正入射,当倍频光从两个相互独立的平面方向(晶体主截面及主截面的垂面)偏离预期方向时,相位失配将出现变化,并且在两个面内的偏离量对转换效率的影响程度不同。我们分别数值模拟了两个方向上的相位失配情况,并给出了谐波转换效率同入射角度偏差的关系。数值模拟结果表明,在主截面内的相位匹配容限角为0.2°,在主截面垂面内的相位匹配容限角为4.5°。同时,开展了实验研究,实验结果与数值模拟结果高度吻合,表明在主截面内的角度偏差对转换效率的影响更大。

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This paper deals with the distribution of generated microcrystallites in borate glass irradiated by 120 fs laser pulses at a central wavelength of 800 nm. Raman spectroscopy is used to investigate the distribution of the high and low temperature phases of barium metaborate crystals generated in the borate glass. In combination with a microexplosion model, bond-breaking induced by laser irradiation is served as the origin of the formation of BBO crystals. Depending on the laser fluence and cooling conditions, the distribution mechanisms have been discussed. (c) 2006 Elsevier B.V. All rights reserved.

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Crystalline beta-BBO thin films have been successfully prepared on (001)-oriented Sr2+-doped alpha-BBO substrates using liquid phase epitaxy and pulsed laser deposition techniques. The films were characterized by X-ray diffraction and X-ray rocking curve (XRC). The present results manifest that the beta-BBO thin films grown on Sr2+-doped alpha-BBO substrates have larger degree of orientation f-value and smaller XRC FWHM than the ones grown on other reported substrates. Compared with other substrates, alpha-BBO has the same UV cutoff and the similar structure to beta-BBO. These results reveal that alpha-BBO single crystal may be a promising substrate proper to the growth of beta-BBO films. (c) 2005 Elsevier B.V. All rights reserved.

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Thin films of beta barium borate have been prepared by liquid phase epitaxy on Si2+-doped alpha-BaB2O4 (alpha-BBO, the high temperature phase of barium berate) (001) and (110) substrates. The results of X-ray diffraction indicate that the films show highly (001) preferred orientation on (001)-oriented substrates while the films grown on (110) substrates are textured with (140) orientation. The crystallinity of these films was found to depend on growth temperature, rotation rate, dip time and orientation of substrate. Growth conditions were optimized to grow films with (001) orientation on (001) substrates reproducibly. The films show second harmonic generation of 400 nm light upon irradiation with 800 nm Ti: Sapphire femtosecond laser light. (c) 2005 Elsevier B.V. All rights reserved.

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Crystalline beta-BBO thin films were successfully prepared on (001)-oriented Sr2+-doped alpha-BBO substrates by using liquid phase epitaxy, pulsed laser deposition and vapor transport equilibration techniques. The films were characterized by X-ray diffraction and X-ray rocking curve. The present results manifest that the beta-BBO thin films grown on Sr2+-doped alpha-BBO substrates have larger degree of orientation f value and smaller X-ray rocking curve FWHM than the ones grown on other reported substrates. Compared with other substrates, alpha-BBO has the similar structure, the same UV cutoff and the same chemical properties to beta-BBO. These results reveal that Sr2+-doped alpha-BBO single crystal may be a promising substrate proper to the growth of beta-BBO films.

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Crystalline beta-BBO layers have been successfully prepared on (0 0 1)-oriented Sr2+-doped alpha-BBO substrates using vapor transport equilibration technique. The layers were characterized by X-ray diffraction, X-ray rocking curve and transmission spectra. The present results manifest that the VTE treatment time and powder ratio are important factors on the preparation of beta-BBO layers. beta-BBO layers with a highly (0 0 l) preferred orientation were obtained according to XRD profiles. The full width at half-maximum of the rocking curve for the layer is as low as about 1000 in., which shows the high crystallinity of the layer. These results reveal the possibility of fabricating beta-BBO (0 0 1) layers on (0 0 1)-oriented Sr2+-doped alpha-BBO substrates by VTE. (C) 2006 Elsevier Ltd. All rights reserved.

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Morphological defects in beta-barium borate (beta-BBO) thin films grown on Sr2+ -doped alpha-BBO substrates by liquid phase epitaxy (LPE) technique were studied by scanning electron micrograph (SEM), atomic force microscopy (AFM) and optical spectroscopy. The present results indicate that the main defects exit in beta-BBO thin films are microcracks and hollow structure. The formation of microcrack is due to the lattice mismatch and the difference of thermal expansion coefficients between substrate and film. The hollow structure might be caused during the combination of islands, which formed in the initial stage. (C) 2006 Elsevier GmbH. All rights reserved.

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The spectral bandwidth of three-wave-mixing optical parametric amplification has been investigated. A general mathematical model for evaluating the spectral bandwidth of optical parametric amplification is developed with parametric bandwidth and gain bandwidth via three-wave noncollinear interactions. The spectral bandwidth is determined by expanding the wave-vector mismatch in a Taylor series and retaining terms through second order. The model takes into account the effects of crystal length, noncollinear angle, group velocity, group-velocity dispersion and gain coefficient. The relation between parametric bandwidth and gain bandwidth is clearly defined. The model is applied to a BBO OPA, a LBO OPA and a CLBO OPA.