Optimization Of Off-Null Ellipsometry For Air/Solid Interfaces

The optimization of off-null ellipsometry is described with emphasis on the improvement of sample thickness sensitivity. Optimal conditions are dependent on azimuth angle settings of the polarizer, compensator, and analyzer in a polarizer-compensator-sample-analyzer ellipsometer arrangement. Numerical simulation utilized offers an approach to present the dependence of the sensitivity on the azimuth angle settings, from which optimal settings corresponding to the best sensitivity are derived. For a series of samples of SiO2 layer (thickness in the range of 1.8-6.5 nm) on silicon substrate, the theory analysis proves that sensitivity at the optimal settings is increased 20 times compared to that at null settings used in most works, and the relationship between intensity and thickness is simplified as a linear type instead of the original nonlinear type, with the relative error reduced to similar to 1/100 at the optimal settings. Furthermore the discussion has been extended toward other factors affecting the sensitivity of the practical system, such as the linear dynamic range of the detector, the signal-to-noise ratio and the intensity from the light source, etc. Experimental results from the investigation Of SiO2 layer on silicon substrate are chosen to verify the optimization. (c) 2007 Optical Society of America.

Optimization of Off-Null Ellipsometry for Optical Biosensor Applications

The optimization of off-null ellipsometry is described with emphasis on the improvement of resolution for visualizing biomolecule layers. For optical biosensor with layer thickness below 6.5 nm, a numerical simulation for the dependence of resolution on the azimuth settings of polarizer and analyzer is presented first. For comparison, three different resolutions are given at three azimuth settings which are near null and far away from null condition, respectively. Furthermore, the square or linear approximation relationship between the intensity and the layer thickness are also given at these settings. The difference among their accuracy is up to 100 times or so. Experimental results of the biosensor sample verify the optimization.

尺度缩小合成孔径激光成像雷达的孔径合成实验

设计了一种尺度缩小的合成孔径激光成像雷达(SAIL),在实验室平台上模拟实施远场传输条件,相应地解决了波前测量和外差质量监视技术,实现了一个目标点的方位向孔径合成实验,实验结果与理论预测相近。

合成孔径激光成像雷达(Ⅱ):空间相位偏置发射望远镜

报道一种可以进行空间相位偏置的光学望远镜,用作合成孔径激光成像雷达中的光学发射天线。在望远镜内放置相位调制平板,控制望远镜的离焦量和位相调制平板的相位函数,能够在激光望远镜的照明区产生可控制的附加空间相位二次项,灵活改变激光照明波前,以在目标回波接收信号中产生雷达运动方向上的所需的二次项相位历程,因此能够实现特定的方位向成像分辨率。

合成孔径激光成像雷达(Ⅲ):双向环路发射接收望远镜

提出了一种用于合成孔径激光成像雷达的双向环路结构的发射接收望远镜,双向环路包括发射4-f转像系统、接收4-f转像系统和独立的望远镜。发射通道中设置离焦和相位调制平板偏置,接收通道中设置离焦和相位平板偏置。控制发射离焦量,发射相位调制函数,接收离焦量,接收相位调制函数,用同一个望远镜可以同时实现空间二次项相位附加偏置的激光发射和消除目标点散射回波接收波面像差的离焦光学接收,并产生雷达运动方向上合适的和可控制的相位二次项历程,从而实现孔径合成成像。详细介绍了系统设计,给出了从发射到光电外差接收的全过程传输方程。

Superresolution, extended focal depth or focal shift with electrically controllable radial birefringent filter

In this paper an electrically controllable radial birefringent pupil filter is proposed. It consists of two polarizers and an improved electrically controllable optical azimuth rotator which has two lambda/4 retarders, one electro-optical crystal and one radial birefringent crystal. The evolution and distribution of polarization states of this pupil filter are discussed. The most interesting and useful advantage of such a structure is that the characteristic of transverse superresolution and axial extended focal depth or focal shift can be obtained merely by controlling the applied voltage on the electro-optical crystal. The radial birefringent crystal azimuth angle cooperating with different electrical inductive phase differences will determine the transverse and axial intensity distribution. It is shown that for particular ranges of electrical inductive phase difference it is possible to obtain transverse superresolution along with extended focal depth or with a focal shift.

Time domain synthesis of electro-optical birefringent system for optical waveform generation

In this paper is described a novel technique for producing an electro-optical intensity synthesizer which can generate different periodic time domain waveforms through only sine or cosine wave applied-voltages. The synthesizer presented here consists of a series of stages between two polarizers, with each stage consisting of an electro-optic element and a compensator. Every electro-optical element has the same applied-voltage function but different azimuth angles and ratios between the longitudinal and transverse lengths. The main principle is the synthesis of an electro-optic effect and a polarization interference effect in the time domain. This technique is based on an expanded Fourier positive-direction searching algorithm, which can not only simplify the calculation process but also produces many choices of structural parameters for different waveforms generation. A three-stage synthesis of an electro-optical birefringent system for continuous square waveform is undertaken to prove the principle.

双中心全息记录的矢量分析与记录方向优化

对描述双掺杂晶体非挥发性全息记录动力学过程的Kukhtarev方程进行了矢量分析, 分析中考虑了体光生伏特效应和外加电场的作用。在小信号近似的基础上给出了双中心全息记录中记录与固定阶段空间电荷场的矢量解析解。在综合考虑空间电荷场的各向异性以及晶体有效电光系数的各向异性后, 给出了双中心全息记录的优化记录方向。结果表明, 对(Fe, Mn):LiNbO3晶体633 nm寻常光记录, 优化记录方向主要由有效电光系数决定, 光栅波矢与光轴夹角为22°, 方位角为30°;对(Fe, Mn):LiNbO3晶体633

基于基频分量消光的1/4波片快轴标定方法

提出了一种基于基频分量消光的波片快轴标定方法,并利用琼斯矩阵对其标定原理进行了分析。激光器、起偏器、相位调制器、待标定1/4波片、检偏器和光电探测器构成标定光路,起偏器、检偏器的透光轴与相位调制器的振动轴分别成+45°和0°夹角。准直激光束依次经过起偏器、相位调制器、待标定1/4波片和检偏器,由光电探测器接收。理论分析表明该标定方法标定精度主要取决于检偏器的定位误差。实验验证了该标定方法的有效性,1/4波片快轴标定结果的最大偏差为0.043°,标准差为0.012°,标定精度为0.05°。

四区域法消除偏振棱镜缺陷对波片相位延迟测量的影响

在起偏器待测波片检偏器系统基础上提出一种四区域测量波片相位延迟量的方法。调整待测波片和检偏器的方位角,获得相应的四组光强值,通过线性运算得到待测波片的相位延迟量,完全消除了起偏器和检偏器不完全消光带来的误差。由于测量系统中不存在标准波片或其他相位调制元件,允许测量波长仅受偏振棱镜和探测器的限制,因此四区域法可适用于很大波长范围内的波片测量。以λ/4波片为例,理论分析了测量系统利用四区域测量法后的仪器误差为σ≤±3.49065×10-3rad(约0.2°),精度比原算法提高约1个数量级。实验验证了四区域法能有效提高系统精度。

Extended bidirectional reflectance distribution function for polarized light scattering from subsurface defects under a smooth surface

By introducing the scattering probability of a subsurface defect (SSD) and statistical distribution functions of SSD radius, refractive index, and position, we derive an extended bidirectional reflectance distribution function (BRDF) from the Jones scattering matrix. This function is applicable to the calculation for comparison with measurement of polarized light-scattering resulting from a SSD. A numerical calculation of the extended BRDF for the case of p-polarized incident light was performed by means of the Monte Carlo method. Our numerical results indicate that the extended BRDF strongly depends on the light incidence angle, the light scattering angle, and the out-of-plane azimuth angle. We observe a 180 degrees symmetry with respect to the azimuth angle. We further investigate the influence of the SSD density, the substrate refractive index, and the statistical distributions of the SSD radius and refractive index on the extended BRDF. For transparent substrates, we also find the dependence of the extended BRDF on the SSD positions. (c) 2006 Optical Society of America.

Calculation of the hourly and daily radiation incident on three step tracking planes

Mathematical formulas for estimating the hourly and daily radiation incident on planes of azimuth three step tracking and hour angle three step tracking have been derived in this paper. Based on the hourly solar radiation data of an average day in each month at Er-Lian-Hao-Te city, the hourly and monthly radiation received by planes of these two kinds of tracking have been calculated. The results show that in this district, one axis azimuth three step tracking and hour angle three step tracking could, respectively, obtain 66.5% and 63.3% higher radiation than that on the horizontal surface all year. Moreover, a two axis azimuth three step tracking plane could receive 72% more radiation than the horizontal surface. (C) 2002 Elsevier Science Ltd. All rights reserved.

A narrow photoluminescence linewidth of 19.2 meV at 1.35 mu m from In0.5Ga0.5As/GaAs quantum island structure grown by molecular beam epitaxy

A self-organized In0.5Ga0.5As/GaAs quantum island structure emitting at 1.35 mum at room temperature has been successfully fabricated by molecular beam epitaxy via cycled (InAs)(1)/GaAs)(1)monolayer deposition method. The photoluminescence measurement shows that a very narrow linewidth of 19.2 meV at 300 K has been reached for the first time, indicating effective suppression of inhomogeneous broadening of optical emission from the In0.5Ga0.5As island structure due to indium segregation reduction by introducing an AlAs layer and the strain reduction by inserting an In0.2Ga0.8As layer overgrown on the top of islands. The mound-like morphology of the islands elongated along the [1 (1) over bar0] azimuth are observed by the atomic force microscopy measurement, which reveals the fact that strain in the islands is partially relaxed along the [1 (1) over bar0] direction. Our results present important information for the fabrication of 1.3 mum wavelength quantum dot devices.

Triclinic deformation and anisotropic strain relaxation of an InAs film on a GaAs(001) substrate measured by a series of symmetric double crystal X-ray diffraction

We presented a series of symmetric double crystal X-ray diffraction (DCXD) measurements, (0 0 4), (2 2 0) and (2 - 2 0) diffraction, to investigate the strain relaxation in an InAs film grown on a GaAs(0 0 1) substrate. The strain tensor and rotation tensor were calculated according to the DCXD results. It is found that the misfit strain is relaxed nearly completely and the strain relaxation caused a triclinic deformation in the epilayer. The lattice parameter along the [1 1 0] direction is a little longer than that along the [1 - 1 0] direction. Furthermore, a significant tilt, 0.2 degrees, towards the [1 1 0] direction while a very slight one: 0.002 degrees, towards [1 - 1 0] direction were discussed. This anisotropic strain relaxation is attributed to the asymmetric distribution of misfit dislocations, which is also indicated by the variation of the full-width at half-maximum (FWHM) of (0 0 4) diffraction along four azimuth angles. (C) 1998 Elsevier Science B.V. All rights reserved.

双面太阳电池垂直安装发电性能的测试

双面太阳电池是一种非常规太阳电池。本文通过建立光伏组件-控制器-蓄电池-负载试验系统，对日立公司双面受光单晶硅太阳电池组件分别在东西和南北朝向情况下垂直地面安装时的功率输出特性进行了测试和分析。根据应用测试结果，总结了双面受光太阳电池的应用优缺点和可能的应用方式。