Phase control of switching from positive to negative index material in a four-level atomic system

Electric and magnetic responses of the medium to the probe field are analysed in a four-level loop atomic system by taking into account the relative phase of the applied fields. An interesting phenomenon is found: under suitable conditions, a change of the refractive index from positive to negative can occur by modulating the relative phase of the applied fields. Then the medium can be switched from a positive index material to a negative index material in our scheme. In addition, a negative index material can be realized in different frequency regions by adjusting the relative phase. It may give us a convenient way to obtain the desired material with positive or negative index.

Atom localization in a four-level alkaline earth atomic system

We propose an atom localization scheme for a four-level alkaline earth atom via a classical standing-wave field, and give the analytical expressions of the localization peak positions as well as the widths versus the parameters of the optical fields. We show that the probability of finding the atom at a particular position can be increased from 1/4 to 1/3 or 1/2 by adjusting the detuning of the probe field and the Rabi frequencies of the optical fields. Furthermore, the localization precision can be dramatically enhanced by increasing the intensity of the standing-wave field or decreasing the detuning of the probe field. The analytical results are quite accordant to the numerical solutions.

Controlling the group velocity in a five-level K-type atomic system

The properties of a five-level K-type system are investigated. With the controlling fields, the properties of the dispersion and absorption of the system are changed greatly. The system can produce anomalous dispersion regions with absorption and normal dispersion regions with absorption or transparency. Furthermore, the group velocity can be varied from subluminal to superluminal by varying the intensity of the controlling field and the probe detunings in principle. (C) 2008 Elsevier B.V. All rights reserved.

双暗态原子系统动力学行为的量子相干控制研究(英文)

量子相干控制前沿问题及应用研究是本世纪物理学前沿领域的重要研究内容.而基于暗态的量子相干控制技术已经导致了在相干布居捕获、绝热跟随、量子信息等多方面的应用.论文主要进行双暗态原子系统动力学行为的若干量子相干控制研究,包括双暗态四能级原子系统的绝热跟随特性研究,双暗态作用提高克尔非线性的新方案提出,自发辐射诱导相干实现非线性极化率的提高以及双通道高效四波混频过程的实现等.

Two mechanisms for population inversion via two-colour coherent excitation in three-level systems

We analyse the physical origin of population inversion via continuous wave two-colour coherent excitation in three-level systems by dressing the inverted transition. Two different mechanisms are identified as being responsible for the population inversion. For V-configured systems and cascade (E) configured systems with inversion on the lower transition, the responsible mechanism is the selective trapping of dressed states, and the population inversion approaches the ideal value of 1. For Lambda-configured systems and Xi-configured systems with inversion on the upper transition, population inversion is based on the selective excitation of dressed states, with the population inversion tending towards 0.5. As the essential difference between these two mechanisms, the selective trapping of dressed states occurs in systems with strong decay into dressed states while the selective excitation appears in systems with strong decay out of dressed states.

Stimulated Raman adiabatic passage from atomic to molecular Bose-Einstein condensates: Feedback laser-detuning control and suppression of dynamical instability

We present a feedback control scheme that designs time-dependent laser-detuning frequency to suppress possible dynamical instability in coupled free-quasibound-bound atom-molecule condensate systems. The proposed adaptive frequency chirp with feedback is shown to be highly robust and very efficient in the passage from an atomic to a stable molecular Bose-Einstein condensate.

INTERFACIAL REACTIONS IN THE CO/SI/GAAS AND SI/CO/GAAS SYSTEMS

The interfacial reactions between thin films of cobalt and silicon and (100)-oriented GaAs substrates in two configurations, Co/Si/GaAs and Si/Co/GaAs, were studied using a variety of techniques including Auger electron spectroscopy, x-ray diffraction, and transmission electron microscopy. The annealing conditions were 200, 300, 400, 600-degrees-C for 30 min, and rapid thermal annealing for 15 s. It was found that Si layer in the Co/Si/GaAs system acts as a barrier at the interface between Co and GaAs when annealed up to 600-degrees-C. The interfacial reaction between Co and Si is faster than that between Co and GaAs in the system of Si/Co/GaAs. The sequence of compound formation for the two metallizations studied (Co/Si/GaAs and Si/Co/GaAs) depends strongly on the sample configuration as well as the layer thickness of Si and Co (Co/Si atomic ratio). From our results, it is promising to utilize Co/Si/GaAs multilayer film structure to make a CoSi2/GaAs contact, and this CoSi2 may offer an alternative to the commonly used W silicides as improved gate metallurgies in self-aligned metal-semiconductor field effect transistor (MESFET) technologies.

Refinement of edge-to-edge matching model and its application in the Mg17Al12/alpha-Mg and alpha-Y/alpha-Mg systems

A refined version of the edge-to-edge matching model is described here. In the original model, the matching directions were obtained from the planes with all the atomic centers that were exactly in the plane, or the distance from the atomic center to the plane which was less than the atomic radius. The direction-matching pairs were the match of straight rows-straight rows and zigzag rows-zigzag rows. In the refined model, the matching directions were obtained from the planes with all the atomic centers that were exactly in the plane.