GIS支持下岷江上游土壤侵蚀动态研究

利用TM数据,采用3S技术和通用土壤侵蚀方程(RUSLE)研究岷江上游地区3个典型时期的土壤侵蚀动态,并对影响侵蚀的主要因子进行初步分析.结果表明,研究区3个时期侵蚀面积分别占研究区总面积的1.28%、1.84%和1.70%;年平均侵蚀模数分别为832.64、1048.74和1362.11t.km-2,以微度侵蚀、轻度侵蚀为主,伴有少量的中度侵蚀.侵蚀面积比较小,侵蚀程度比较轻.侵蚀与坡度呈显著正相关,侵蚀大多发生在>25°的区域,1986年占总侵蚀量的93.65%,1995年为93.81%,2000年为92.71%;在海拔上,中山、亚高山、高山以及干旱河谷是侵蚀发生的主要地带,1986年占总侵蚀量的98.21%,1995年为97.63%,2000年为99.27%;不同类型的植被直接影响到侵蚀的发生,灌木林地以及新退耕的疏林地是3个时期侵蚀的主要发生地,过度放牧导致草场退化,也产生了微度侵蚀;侵蚀的发生和土壤类型密切相关,燥褐土、石灰性褐土最易发生侵蚀,是控制侵蚀的重点区域;人口的增长、户数的增加是侵蚀发生的驱动因子,人口与户数增长导致资源需求压力的增大,侵蚀呈线性增加.

流动注射化学发光检测法的进展

评述了近年来流动注射化学发光检测法及生物发光检测法的最新进展。内容涉及各类化学发光反应、生物发光反应和电致化学发光反应同流动注射体系的耦合方式，仪器设计，多种无机、有机、生物大分子、生物活性物质及药物的分析方法及其在环境、生物医学科学和生命科学、临床化学及药物化学中的应用和发展方向，引用文献124篇。

Study on in-plane optical anisotropy of Si0.75Ge0.25/Si/Si0.5Ge0.5 asymmetric superlattice by reflectance difference spectroscopy - art. no. 071908

Si0.75Ge0.25/Si/Si0.5Ge0.5 trilayer asymmetric superlattices were prepared on Si (001) substrate by ultrahigh vacuum chemical vapor deposition at 500 degrees C. The nonlinear optical response caused by inherent asymmetric interfaces in this structure predicted by theories was verified by in-plane optical anisotropy in (001) plane measured via reflectance difference spectroscopy. The results show Si0.75Ge0.25/Si/Si0.5Ge0.5 asymmetric superlattice is optically biaxial and the two optical eigen axes in (001) plane are along the directions [110] and [-110], respectively. Reflectance difference response between the above two eigen axes can be influenced by the width of the trilayers and reaches as large as similar to 10(-4)-10(-3) in 15-period 2.7 nm-Si0.75Ge0.25/8 nm-Si/1.3 nm-Si0.5Ge0.5 superlattice when the normal incident light wavelength is in the range of 500-1100 nm, which is quite remarkable because the optical anisotropy does not exist in bulk Si.

Electro-optic coefficients of Si0.75Ge0.25/Si/Si0.5Ge0.5 asymmetric superlattice measured by polarization-maintaining fiber-optic Mach-Zehnder interferometer

Ten-period 5.5 nm Si0.75Ge0.25/10.3 nm Si/2.5 nm Si0.5Ge0.5 trilayer asymmetric superlattice was prepared on Si (001) substrate by ultrahigh vacuum chemical vapor deposition at 500 degrees C. The stability of Mach-Zehnder interferometer was improved by utilizing polarization-maintaining fibers. According to the electro-optic responses of the superlattice with the light polarization along [110] and [-110], respectively, both electro-optic coefficients gamma(13) and gamma(63) of such asymmetric superlattice were measured. gamma(13) and gamma(63) are 2.4x10(-11) and 1.3x10(-11) cm/V, respectively, with the incident light wavelength at 1.55 mu m. (c) 2006 American Institute of Physics.

Electroabsorption-modulated DFB laser integrated with dual-waveguide spot-size converter - art. no. 60200N

A 1.55-mu m ridge DFB laser and electroabsorption modulator monolithically integrated with a buried-ridge-stripe dual-waveguide spot-size converter at the output port for low-loss coupling to a cleaved single-mode optical fiber was fabricated by means of selective area growth, quantum well intermixing and dual-core technologies. These devices exhibit threshold current of 28 mA, side mode suppression ratio of 38.0 dB, 3-dB modulation bandwidth of 12.0 GHz, modulator extinction ratios of 25.0 dB dc. The output beam divergence angles of the spot-size converter in the horizontal and vertical directions are as small as 8.0 degrees x 12.6 degrees, respectively, resulting in 3.2 dB coupling loss with a cleaved single-mode optical fiber.

High quality CeO2 film grown on Si(111) substrate by using low energy dual ion beam deposition technology

By using the mass-analyzed low energy dual ion beam deposition technique, a high quality epitaxial, insulating cerium dioxide thin film with a thickness of about 2000 Angstrom, has been grown on a silicon (111) substrate. The component species, cerium and oxygen, are homogeneous in depth, and have the correct stoichiometry for CeO2. X-ray double-crystal diffraction shows that the full width at half maximum of the (222) and (111) peaks of the film are less than 23 and 32 s, respectively, confirming that the film is a perfect single crystal. (C) 1995 American Institute of Physics.