Laser-induced damage threshold of the antireflection coatings on quartz and sapphire under different laser modes

The laser-induced damage threshold (LIDT) and damage morphology of antireflection (AR) coatings on quartz and sapphire are investigated. A very interesting phenomena is found in the measurement. In the case of a single pulse laser, the LIDT of the AIR coatings on quartz is higher than that of sapphire. On the contrary, for a free-pulse laser, the LIDT of AIR coatings on sapphire is higher than that of quartz. (C) 2004 Society of Photo-Optical Instrumentation Engineers.

三硼酸锂晶体上1064 nm, 532 nm, 355 nm三倍频增透膜的设计

采用矢量法设计了三硼酸锂晶体上1064 nm、532 nm和355 nm三倍频增透膜,结果表明1064 nm、532 nm和355 nm波长的剩余反射率分别为0.0017％、0.0002％和0.0013％。根据误差分析,薄膜制备时沉积速率精度控制在＋5.5％时,1064 nm、532 nm和355 nm波长的剩余反射率分别增加至0.20％、0.84％和1.89％。当材料折射率的变化控制在＋3％时,1064 nm处的剩余反射率增大为0.20％,532 nm和355 nm处分别达0.88％和0.24％。与薄膜

LiB3O5晶体上四倍频增透膜设计

采用矢量法设计了三硼酸锂（LiB3O5，LBO）晶体上1064nm、532nm、355nm和266nm四倍频增透膜．结果表明，在1064nm、532nm、355nm和266nm波长的剩余反射率分别为0．0019％、0．0031％、0．0061％和0．0047％．根据容差分析，薄膜制备时沉积速率准确度控制在＋6．5％时，基频、二倍频、三倍频和四倍频波长的剩余反射率分别增加至0．24％、0．92％、2．38％和4．37％．当薄膜材料折射率的变化控制在＋3％时，1064nm波长的剩余反射率增大为0．18％，532nm、355nm和266nm波长分别达0．61％，0．59％，0．20％．与薄膜物理厚度相比，膜层折射率对剩余反射率的影响大．对膜系敏感层的分析表明，在1064nm和266nm波长，从入射介质向基底过渡的第二层膜厚度变化对剩余反射率的影响最大，其次是第一膜层．在532nm和355nm波长，从入射介质向基底过渡的第一和第四膜层是该膜系的敏感层．误差分析也表明，薄膜材料的色散对特定波长的剩余反射率具有明显影响，即1064nm、532nm、355nm和266nm波长的剩余反射率分别增加至0．30％、0．23％、0．58％和3．13％．

Novel method for design of surface relief guided-mode resonant gratings at normal incidence

We demonstrate that the surface relief guided-mode resonant gratings with specified central wavelength and FWHM in the visible wavelength range can be designed by analyzing the complex poles of Reflectance and transmission coefficient matrix algorithm (RTCM), a variant of S-matrix propagation algorithm proposed for calculation of multilayer gratings. In addition, FWHM is computed with couple-mode (CM) theory of resonant gratings which is firstly extended by Norton et al. in calculation of waveguide grating. Furthermore, the side band reflections of the filter can be reduced to less than 5% in the visible wavelength with the antireflection (AR) design technique widely used in the thin-film field. (C) 2008 Elsevier B.V. All rights reserved.

引入过渡层提高介质减反膜的抗激光损伤阈值

提出了一种用于提高介质减反膜的损伤阈值的新的方法，在H2.5L (H:HfO2, L:SiO2)的膜层与基底之间引入4个1/4光学厚度的SiO2薄膜，发现抗激光损伤阈值提高了50%，并且保持1064nm处的反射率低于0.09%。本文分析了造成这一提高的机制，一定厚度的氧化硅过渡层的引入是一种提高介质减反膜的损伤阈值的灵活有效的方法。

Influence of different substrates on laser induced damage thresholds at 1064 nm of Ta2O5 films

Ta2O5 films are prepared on Si, BK7, fused silica, antireflection (AR) and high reflector (HR) substrates by electron beam evaporation method, respectively. Both the optical property and laser induced damage thresholds (LIDTs) at 1064 nm of Ta2O5 films on different substrates are investigated before and after annealing at 673 K for 12h. It is shown that annealing increases the refractive index and decreases the extinction index, and improves the O/Ta ratio of the Ta2O5 films from 2.42 to 2.50. Moreover, the results show that the LIDTs of the Ta2O5 films are mainly correlated with three parameters: substrate property, substoichiometry defect in the films and impurity defect at the interface between the substrate and the films. Details of the laser induced damage models in different cases are discussed.

A highly efficient light-trapping structure for thin-film silicon solar cells

A highly efficient light-trapping structure, consisting of a diffractive grating, a distributed Bragg reflector (DBR) and a metal reflector was proposed. As an example, the proposed light-trapping structure with an indium tin oxide (ITO) diffraction grating, an a-Si:H/ITO DBR and an Ag reflector was optimized by the simulation via rigorous coupled-wave analysis (RCWA) for a 2.0-mu m-thick c-Si solar cell with an optimized ITO front antireflection (AR) layer under the air mass 1.5 (AM1.5) solar illumination. The weighted absorptance under the AM1.5 solar spectrum (A(AM1.5)) of the solar cell can reach to 69%, if the DBR is composed of 4 pairs of a-Si:H/ITOs. If the number of a-Si:H/ITO pairs is up to 8, a larger A(AM1.5) of 72% can be obtained. In contrast, if the Ag reflector is not adopted, the combination of the optimized ITO diffraction grating and the 8-pair a-Si:H/ITO DBR can only result in an A(AM1.5) of 68%. As the reference, A(AM1.5) = 31% for the solar cell only with the optimized ITO front AR layer. So, the proposed structure can make the sunlight highly trapped in the solar cell. The adoption of the metal reflector is helpful to obtain highly efficient light-trapping effect with less number of DBR pairs, which makes that such light-trapping structure can be fabricated easily.

Passive Q-switching of diode-pumped Yb:YAG microchip laser with ion-implanted GaAs

We reported a passive Q-switched diode laser pumped Yb:YAG microchip laser with an ion-implanted semi-insulating GaAs wafer. The wafer was implanted with 400-keV As^(+) in the concentration of 10^(16) ions/cm^(2). To decrease the non-saturable loss, we annealed the ion-implanted GaAs at 500 oC for 5 minutes and coated both sides of the ion-implanted GaAs with antireflection (AR) and highreflection (HR) films, respectively. Using GaAs wafer as an absorber and an output coupler, we obtained 52-ns pulse duration of single pulse.

The cellular structure of a two-dimensional H2/O2/Ar detonation wave

In this paper, the cellular structure of a two-dimensional detonation wave in a low pressure H2/O2/Ar mixture calculated with a detailed chemical reaction model, high order scheme and high resolution grids is investigated. The regular cellular structure is produced about 1 ms after introducing perturbations in the reaction zone of a steady one-dimensional detonation wave. It is found from the present resolution study that the discrepancies concerning the structure type arising from the coarser grid employed can be resolved using a sufficiently fine grid size of 0.05 mm and below and shows a double-Mach-like strong-type configuration. During the structure evolution process, the structure configuration does not change much in the periods before and after the triple point collision. Through the triple point collision, three regular collision processes are observed and are followed by a quick change to the double-Mach-like configuration. The simulated structure tracks show that there are three different tracks associated with different triple points or the kink on the transverse wave. Comparisons with previous work and experiments indicate the presence of a strong structure for an ordinary detonation.

The Structure and Evolution of a Two-Dimensional H2/O2/Ar Cellular Detonation

This paper reports on two-dimensional numerical simulation of cellular detonation wave in a / / mixture with low initial pressure using a detailed chemical reaction model and high order WENO scheme. Before the final equilibrium structure is produced, a fairly regular but still non-equilibrium mode is observed during the early stage of structure formation process. The numerically tracked detonation cells show that the cell size always adapts to the channel height such that the cell ratio is fairly independent of the grid sizes and initial and boundary conditions. During the structural evolution in a detonation cell, even as the simulated detonation wave characteristics suggest the presence of an ordinary detonation, the evolving instantaneous detonation state indicates a mainly underdriven state. As a considerable region of the gas mixture in a cell is observed to be ignited by the incident wave and transverse wave, it is further suggested that these two said waves play an essential role in the detonation propagation.

Comparative observation of Ar, Ar-H-2 and Ar-N-2 DC arc plasma jets and their arc root behaviour at reduced pressure

Results observed experimentally are presented, about the DC arc plasma jets and their arc-root behaviour generated at reduced gas pressure without or with an applied magnetic field. Pure argon, argon-hydrogen or argon- nitrogen mixture was used as the plasma-forming gas. A specially designed copper mirror was used for a better observation of the arc-root behaviour on the anode surface of the DC non-transferred arc plasma torch. It was found that in the cases without an applied magnetic field, the laminar plasma jets were stable and approximately axisymmetrical. The arc-root attachment on the anode surface was completely diffusive when argon was used as the plasma-forming gas, while the arc-root attachment often became constrictive when hydrogen or nitrogen was added into the argon. As an external magnetic field was applied, the arc root tended to rotate along the anode surface of the non-transferred arc plasma torch.

Ar原子光电流效应的研究

<正> 在十种染料波长范围内对应阴极放电中Ar原子光电流谱进行了观察,比较了Ar与Ne光电流效应的异同,提出了理论模型,并求得了放电电流与激光功率关系。

空阴极放电中Ar光电流谱的研究

在十种染料的波长范围内对空阴极放电中Ar的光电流谱、光电流信号与时间、放电电流及入射激光功率关系进行了实验观测,比较了Ne与Ar光电流效应的异同,在其共同点的基础上讨论了Ne与Ar光电流效应的机理,提出了理论模型并求得了放电电流与入射激光功率密度的关系。

Behavior of ar plasma formed in a high-density plasma source - an ecr reactor

In order to develop the ultra-large scale integration(ULSI), low pressure and high density plasma apparatus are required for etching and deposit of thin films. To understand critical parameters such as the pressure, temperature, electrostatic potential and energy distribution of ions impacting on the wafer, it is necessary to understand how these parameters are influenced by the power input and neutral gas pressure. In the present work, a 2-D hybrid electron fluid-particle ion model has been developed to simulate one of the high density plasma sources-an Electron Cyclotron Resonance (ECR) plasma system with various pressures and power inputs in a non-uniform magnetic field. By means of numerical simulation, the energy distributions of argon ion impacting on the wafer are obtained and the plasma density, electron temperature and plasma electrostatic potential are plotted in 3-D. It is concluded that the plasma density depends mainly on both the power input and neutral gas pressure. However, the plasma potential and electron temperature can hardly be affected by the power input, they seem to be primarily dependent on the neutral gas pressure. The comparison shows that the simulation results are qualitatively in good agreement with the experiment measurements.