The multi-weight neuron with geometry algorithm and its application

A novel approach for multi-dimension signals processing, that is multi-weight neural network based on high dimensional geometry theory, is proposed. With this theory, the geometry algorithm for building the multi-weight neuron is mentioned. To illustrate the advantage of the novel approach, a Chinese speech emotion recognition experiment has been done. From this experiment, the human emotions are classified into 6 archetypal classes: fear, anger, happiness, sadness, surprise and disgust. And the amplitude, pitch frequency and formant are used as the feature parameters for speech emotion recognition. Compared with traditional GSVM model, the new method has its superiority. It is noted that this method has significant values for researches and applications henceforth.

Mandarin speech emotion recognition based on high dimensional geometry theory

In this paper, a novel approach for mandarin speech emotion recognition, that is mandarin speech emotion recognition based on high dimensional geometry theory, is proposed. The human emotions are classified into 6 archetypal classes: fear, anger, happiness, sadness, surprise and disgust. According to the characteristics of these emotional speech signals, the amplitude, pitch frequency and formant are used as the feature parameters for speech emotion recognition. The new method called high dimensional geometry theory is applied for recognition. Compared with traditional GSVM model, the new method has some advantages. It is noted that this method has significant values for researches and applications henceforth.

A study on GaP/Si heterostructures grown by GS-MBE

GaP/Si is a promoting heterostructure for Si-based optoelectronic devices since lattice constants of GaP and Si are so closed that they can match with each other. GaP was successfully grow on (100) Si subtracts by Gas-Source Molecular Bean Epitaxy (GS-MBE) in the study. The GaP/Si heterostructure was characterized by X-ray double crystal diffraction, Anger electron spectrograph, X-ray photonic spectrograph and photoluminescence (PL) measurements. The results showed that the epitaxial GaP layers are single crystalline, in which a parallel to and a (perpendicular to)are 0.54322 and 0.54625 nm, respectively. The peaks in PL spectra of GaP epitaxial layer grown on Si are 650, 627 and 640 nm, respectively. The study demonstrated that GaP/Si is a kind of lattice matched heterostructures and will be a promoting materials for future integrated photonics.

CHARACTERIZATION OF OXIDES AND HALOGENIDES OF CERIUM BY ESCA .2. AUGER PEAKS OF CE-M5N45N45

The larger chemical shift of cerium compounds was discoveried. The chemical states of the cerium compounds were identified by the chemical shifts of Auger energy. The changes in Anger energy and parameters are principally due to the changes in extra-atomic relaxation or polarization energy. The increase of the polarizable properties in anions of cerium compounds corresponds to the increase of Auger energy and parameter. The Auger parameter can be measured more accurately. Ce(CF3COO)(x)Cl-3-x was also studied by ESCA. It is shown that the electron density at cerium atom increases with the increase of x, while the electron density at oxygen atom decreases.