Metal catalysis-free, direction-controlled planar growth of single-crystalline alpha-Si3N4 nanowires on Si(100) substrate

Single-crystalline alpha-Si3N4 nanowires are controlled to grow perpendicular to the wet-etched trenches in the SiO0.94 film on the plane of the Si substrate without metal catalysis. A detailed characterization is carried out by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The photoluminescence at 600 nm from alpha-Si3N4 nanowires is attributed to the recombination at the defect state formed by the Si dangling bond N3 equivalent to Si-center dot. The growth mechanism is considered to be related to the catalysis and nitridation of SiO nanoclusters preferably re-deposited around the inner corner of the trenches, as well as faster Si diffusion along the slanting side walls of the trenches. This simple direction-controlled growth method is compatible with the CMOS process, and could facilitate the fabrication of alpha-Si3N4 nanoelectronic or nanophotonic devices on the Si platform.

Superelastic And Spring Properties Of Si3N4 Microcoils

Silicon nitride with helical structure was prepared on a large scale by CVD. On the microscale, these coiled Si3N4 ceramics still possess superelasticity and can recover their original shapes after cyclic loadings without noticeable deformations. These results suggest helical microcoils could have potential in microdevices for MEMS, motors, electromagnets, generators, and related equipment.

Enhanced crystallization and phase transformation of amorphous silicon nitride under high pressure

The crystallization and phase transformation of amorphous Si3N4 ceramics under high pressure (1.0-5.0 GPa) between 800 and 1700 degreesC were investigated. A greatly enhanced crystallization and alpha-beta transformation of the amorphous Si3N4 ceramics were evident under the high pressure, as characterized by that, at 5.0 GPa, the amorphous Si3N4, began to crystallize at a temperature as low as 1000 degreesC (to transform to alpha modification). The subsequent alpha-beta transformation occurred completed between 1350 and 1420 degreesC after only 20 min of pressing at 5.0 GPa. In contrast, under 0.1 MPa N-2, the identical amorphous materials were stable up to 1400 degreesC without detectable crystallization, and only a small amount of a phase was detected at 1500 degreesC. The crystallization temperature and the alpha-beta transformation temperatures are reduced by 200-350 degreesC compared to that at normal pressure. The enhanced phase transformations of the amorphous Si3N4, were discussed on the basis of thermodynamic and kinetic consideration of the effects of pressure on nucleation and growth.

Thermodynamics of the displacive mechanism of alpha(1) transformation in a beta

Thermodynamics of the displacive mechanism of plate-shaped phase alpha(1) was analyzed in beta'Cu-Zn alloys. It was proposed that the displacive transformation of the alpha(1) plate took place in the solute-depleted region formed in the parent phase during the incubation period. The thermodynamic analysis indicated that the driving force of alpha(1) transformation, Delta G, increased with the reduction of x(d), the solute concentration of the depleted region. And, Delta G could overcome-the transformation barrier with solute depletion to a certain degree. In addition, x(d) was higher than the equilibrium concentration in the phase diagram. Therefore, the shear formation of alpha(1) plate in the solute-depleted region was thermodynamically supported.

Pressure and thermal effects on elastic properties of single crystal alpha-Al2O3 from Monte-Carlo simulation

A rectangular structural unit cell of a-Al2O3 is generated from its hexagonal one. For the rectangular structural crystal with a simple interatomic potential [Matsui, Mineral Mag. 58A, 571 (1994)], the relations of lattice constants to homogeneous pressure and temperature are calculated by using Monte-Carlo method at temperature 298K and 0 GPa, respectively. Both numerical results agree with experimental ones fairly well. By comparing pair distribution function, the crystal structure of a-Al2O3 has no phase transition in the range of systematic parameters. Based on the potential model, pressure dependence of isothermal bulk moduli is predicted. Under variation of general strains, which include of external and internal strains, elastic constants of a-Al2O3 in the different homogeneous load are determined. Along with increase of pressure, axial elastic constants increase appreciably, but nonaxial elastic constants are slowly changed.

Molecular dynamics studies on dislocations in crystallites of nanocrystalline alpha-iron

Molecular dynamics simulations have been carried our to study the atomic structure of the crystalline component of nanocrystalline alpha-iron. A two-dimensional computational block is used to simulate the consolidation process. It is found that dislocations are generated in the crystallites during consolidation when the grain size is large enough. The critical value of the grain size for dislocation generation appears to be about 9 nm. This result agrees with experiment qualitatively. AN dislocations that are preset in the original grains glide out during consolidation. It shows that dislocations in the crystallites we generated in consolidation process, but not in the original grains. Higher consolidation pressure results in more dislocations. Furthermore, new interfaces are found within crystallites. These interfaces might result from the special environment of nanomaterial. (C) 1998 Acta Metallurgica Inc.

Dislocations in the crystallites of nanocrystalline alpha-Fe - A molecular dynamics study

Molecular dynamics simulations are carried out in order to study the atomic structure of crystalline component, of nanocrystalline alpha-Fe when it is consolidated from small grains. A two-dimensional computational block is used to simulate the consolidation process. All the preset dislocations in the original grains glide out of them in the consolidation process, but new dislocations can generate when the grain size is large enough. It shows that dislocations exist in the consolidated material rather than in the original grains. Whether dislocations exist in the crystalline component of the resultant model nana-material depends upon grain size. The critical value of grain size for dislocation generation appears to be about 9 nm. This result agrees with experiments qualitatively.

A study on stratification of concentration in crystal-growth of alpha-liio3 by holographic-interferometry

A new thermoplastic-photoconductor laser holographic recording system has been used for real-time and in situ observation of alpha-LiIO3 crystal growth. The influence of crystallization-driven convection on the concentration stratification in solution has been studied under gravity field. It is found that the stratification is closely related to the seed orientation of alpha-LiIO3 crystal. When the optical axis of crystal seed C is parallel to the gravity vector g, the velocity of the concentration stratification is two times larger than that in the case of C perpendicular-to g. It needs 40 h for the crystalline system of alpha-LiIO3 to reach stable concentration distribution (expressed as tau) at 47.6-degrees-C. The time tau is not sensitive to the seed orientation. Our results provide valuable data for designing the crystal growth experiments ia space.

Synthesis of nickel(II) complexes of alpha-isoxazolylazo-beta-diketones and their absorption of spin-coating films and thermal properties for HD-DVD-R

Three kinds of new nickel(II) complexes of alpha-isoxazolylazo-beta-diketones with blue-violet light absorption were synthesized. Their structures were postulated based on elemental analysis, MS and FT-IR spectra. Smooth films on K9 glass substrates were prepared using the spin-coating method. The absorption properties and thermal stability of these complexes were discussed. The static optical recording test for high density digital versatile disc-recordable (HD-DVD-R) system was also studied. (c) 2005 Elsevier B.V. All rights reserved.

Spectroscopic and thermal properties of short wavelength metal (II) complexes containing alpha-isoxazolylazo-beta-diketones as co-ligands

Two new azo dyes of alpha-isoxazolylazo-beta-dilcetones and their Ni(II) and Cu(II) complexes with blue-violet light wavelength were synthesized using a coupling component, different diazo components and metal (II) ions (Ni2+ and Cu2+). Based on the elemental analysis, MS spectra and FT-IR spectral analyses, azo dyes were unequivocally shown to exist as hydrazoketo and azoenol forms which were respectively obtained from the solution forms and from the solid forms. The action of sodium methoxide (NaOMe) on azo dyes in solutions converts hydrazoketo form into azoenol form, so azo dyes are coordinated with metal (II) ions as co-ligands in the azoenol forms. The solubility of all the compounds in common organic solvents such as 2,2,3,3-tetrafluoro-1-propanol (TFP) or chloroform (CHCl3) and absorption properties of spin-coating thin films were measured. The difference of absorption maxima from the complexes to their ligands was discussed. In addition, the TG analysis of the complexes was also determined, and their thermal stability was evaluated. It is found that these new metal (II) complexes had potential application for high-density digital versatile disc-recordable (HD-DVD-R) system due to their good solubility in organic solvents, reasonable and controllable absorption spectra in blue-violet light region and high thermal stability. (c) 2004 Elsevier B.V. All rights reserved.

Growth of beta barium borate (beta-BaB2O4) thin films on alpha barium borate (alpha-BaB2O4) substrates

Crystalline beta-BBO thin films have been successfully prepared on (001)-oriented Sr2+-doped alpha-BBO substrates using liquid phase epitaxy and pulsed laser deposition techniques. The films were characterized by X-ray diffraction and X-ray rocking curve (XRC). The present results manifest that the beta-BBO thin films grown on Sr2+-doped alpha-BBO substrates have larger degree of orientation f-value and smaller XRC FWHM than the ones grown on other reported substrates. Compared with other substrates, alpha-BBO has the same UV cutoff and the similar structure to beta-BBO. These results reveal that alpha-BBO single crystal may be a promising substrate proper to the growth of beta-BBO films. (c) 2005 Elsevier B.V. All rights reserved.

Preparation of crystalline beta barium borate thin films on Sr2+-doped alpha barium borate substrates by liquid phase epitaxy

Thin films of beta barium borate have been prepared by liquid phase epitaxy on Si2+-doped alpha-BaB2O4 (alpha-BBO, the high temperature phase of barium berate) (001) and (110) substrates. The results of X-ray diffraction indicate that the films show highly (001) preferred orientation on (001)-oriented substrates while the films grown on (110) substrates are textured with (140) orientation. The crystallinity of these films was found to depend on growth temperature, rotation rate, dip time and orientation of substrate. Growth conditions were optimized to grow films with (001) orientation on (001) substrates reproducibly. The films show second harmonic generation of 400 nm light upon irradiation with 800 nm Ti: Sapphire femtosecond laser light. (c) 2005 Elsevier B.V. All rights reserved.

Fabrication of beta-BaB2O4 layers on (001) Sr2+-doped alpha-BaB2O4 by vapor transport equilibration (VTE)

Crystalline beta-BBO layers have been successfully prepared on (0 0 1)-oriented Sr2+-doped alpha-BBO substrates using vapor transport equilibration technique. The layers were characterized by X-ray diffraction, X-ray rocking curve and transmission spectra. The present results manifest that the VTE treatment time and powder ratio are important factors on the preparation of beta-BBO layers. beta-BBO layers with a highly (0 0 l) preferred orientation were obtained according to XRD profiles. The full width at half-maximum of the rocking curve for the layer is as low as about 1000 in., which shows the high crystallinity of the layer. These results reveal the possibility of fabricating beta-BBO (0 0 1) layers on (0 0 1)-oriented Sr2+-doped alpha-BBO substrates by VTE. (C) 2006 Elsevier Ltd. All rights reserved.

Edge-defined, film-fed growth (EFG) technique for the preparation of alpha-Al2O3 : C crystal with highly sensitive thermoluminescence response

In this work, alpha-Al2O3:C, a highly sensitive thermoluminescence dosimetry crystal, was grown by the EFG method in which a graphite heating unit and shield acted as the carbon source during the growth process. The optical, luminescent properties and dosimetric characteristics of the crystal were investigated. The as-grown crystal shows a single glow peak at 536 K, which is associated with Cr3+ ions. After annealing in H-2 at 1673 K for 80 h, the crystal shows a single glow peak at 460 K and a blue emission band at 415 nm. The thermoluminescent response of the annealed crystal shows linear-sublinear-saturation characteristics in the dose range from 5 x 10(-6) to 100 Gy.

Growth of highly sensitive thermoluminescent crystal alpha-Al2O3 : C by the temperature gradient technique

In this work, an alpha-Al2O3:C crystal with highly sensitive thermoluminescence was directly grown by the temperature gradient technique (TGT) using Al2O3 and graphite powders as raw materials. The optical and luminescent properties and the dosimetric characteristics of the crystal were investigated. An as-grown alpha-Al2O3:C crystal shows a single glow peak at 462 K and a blue emission peak at 415 nm. The thermoluminescence (TL) response of the crystal shows a linear-sublinear-saturation characteristic. In the dose range from 5 x 10(-6) to 10Gy, the alpha-Al2O3:C crystal shows excellent linearity, and saturation was observed at about 30Gy. The sensitivity of the crystal decreases as the heating rate increases. (c) 2008 Elsevier B.V. All rights reserved.