Temporal characteristic simulation for stimulated emission depletion microscopy

The imaging technology of stimulated emission depletion (STED) utilizes the nonlinearity relationship between the fluorescence saturation and the excited state stimulated depletion. It implements three-dimensional (3D) imaging and breaks the diffraction barrier of far-field light microscopy by restricting fluorescent molecules at a sub-diffraction spot. In order to improve the resolution which attained by this technology, the computer simulation on temporal behavior of population probabilities of the sample was made in this paper, and the optimized parameters such as intensity, duration and delay time of the STED pulse were given.

几种鱼类线粒体ATP酶活性的比较研究

本文比较了草鱼(Ctenopharyngodon idellus)瓦氏雅罗鱼(Leucisous waleckii)和鲮鱼(Cirrhinus molitorella)在常、低温驯养时,肝细胞线粒体ATP酶活性;并采用吐温80处理线粒体,观察其对线粒体ATP酶活化能Arrhenius图折点温度的影响,讨论了线粒体ATP酶活性与鱼类低温适应能力的相关性。认为鱼类线粒体ATP酶活化能折点温度在常、低温驯养时的差异程度和鱼的抗寒性能有关;低温驯养时,线粒体ATP酶活化能折点温度的高低和鱼的低温耐受能力有关。

Depletion of Vipp1 in Synechocystis sp PCC 6803 affects photosynthetic activity before the loss of thylakoid membranes

A vipp1 mutant of Synechocystis sp. PCC 6803 could not be completely segregated under either mixotrophic or heterotrophic conditions. A vipp1 gene with a copper-regulated promoter (P-petE-vipp1) was integrated into a neutral platform in the genome of the merodiploid mutant. The copper-induced expression of P-petE-vipp1 allowed a complete segregation of the vipp1 mutant and observation of the phenotype of Synechocystis 6803 with different levels of vesicle-inducing protein in plastids 1 (Vipp1). When P-petE-vipp1 was turned off by copper deprivation, Synechocystis lost Vipp1 and photosynthetic activity almost simultaneously, and at a later stage, thylakoid membranes and cell viability. The photosystem II (PSII)-mediated electron transfer was much more rapidly reduced than the PSI-mediated electron transfer. By testing a series of concentrations, we found that P-petE-vipp1 cells grown in medium with 0.025 mu M Cu2+ showed no reduction of thylakoid membranes, but greatly reduced photosynthetic activity and viability. These results suggested that in contrast to a previous report, the loss of photosynthetic activity may not have been due to the loss of thylakoid membranes, but may have been caused more directly by the loss of Vipp1 in Synechocystis 6803.

Silicon waveguide modulator based on carrier depletion in periodically interleaved PN junctions

We present the design and numerical simulation results for a silicon waveguide modulator based on carrier depletion in a linear array of periodically interleaved PN junctions that are oriented perpendicular to the light propagation direction. In this geometry the overlap of the optical waveguide mode with the depletion region is much larger than in designs using a single PN junction aligned parallel to the waveguide propagation direction. Simulations predict that an optimized modulator will have a high modulation efficiency of 0.56 V.cm for a 3V bias, with a 3 dB frequency bandwidth of over 40 GHz. This device has a length of 1.86 mm with a maximum intrinsic loss of 4.3 dB at 0V bias, due to free carrier absorption. (C) 2009 Optical Society of America

High speed silicon optical switches based on carrier depletion - art. no. 67812D

The novel design of a silicon optical switch on the mechanism of a reverse p-n junction is proposed. The figuration of contact regions at slab waveguides and the ion implantation technology for creation of junctions are employed in the new design. The two-layer rib structure is helpful for reduction of optical absorption losses induced by metal and heavily-doped contact. And more, simulation results show that the index modulation efficiency of Mach-Zehnder interferometer enhances as the concentrations of dopants in junctions increase, while the trade-off of absorption loss is less than 3 dB/mu m. The phase shift reaches about 5 x 10(-4) pi/mu m at a reverse bias of 10V with the response time of about 0.2ns. The preliminary experimental results are presented. The frequency bandwidth of modulation operation can arrive in the range of GHz. However, heavily-doped contacts have an important effect on pulse response of these switches. While the contact region is not heavily-doped, that means metal electrodes have schottky contacts with p-n junctions, the operation bandwidth of the switch is limited to about 1GHz. For faster response, the heavily-doped contacts must be considered in the design.