Coherent quantum control of atomic and molecular processes by using the technique of laser pulses

Several schemes for coherent quantum control of atomic and molecular processes have been proposed and investigated by using the techniques of adiabatic passage and ultrashort pulses, respectively. Some interesting results have been found.

Quantum interference effects of two coherent population trapping states on the atomic spectral lines of a F-e=0 -> F-g=1 transition

We investigate the fluorescence spectrum in a nearly degenerate atomic system of a F-e = 0 -> F-g = 1 transition by analytically solving Schrodinger equations. An ultranarrow fluorescence spectral line in between the two coherent population trapping windows has been found. Our analytic solutions clearly show the origin of the ultranarrow spectral line. Due to quantum interference effects between two coherent population trapping states, the width and intensity of the central spectral line can be controlled by an external magnetic field. Such an effect may be used to detect a magnetic field.

Thermal annealing effect on InAs/InGaAs quantum dots grown by atomic layer molecular beam epitaxy

The effect of rapid thermal annealing on the InAs quantum dots (QDs) grown by atomic layer molecular beam epitaxy and capped with InGaAs layer has been investigated using transmission electron microscopy and photoluminescence (PL). Different from the previously reported results, no obvious blueshift of the PL emission of QDs is observed until the annealing temperature increases up to 800 degreesC. The size and shape of the QDs annealed at 750 degreesC have hardly changed indicating the relatively weak Ga/In interdiffusion, which is characterized by little blueshift of the PL peak of QDs. The QD size increases largely and a few large clusters can be observed after 800 degreesC RTA, implying the fast interdiffusion and the formation of InGaAs QDs. These results indicate that the delay of the blueshift of the PL peak of QDs is correlated with the abnormal interdiffusion process, which can be explained by two possible reasons: the reduction of excess-As-induced defects and the redistribution of In, Ga atoms around the InAs QDs resulted from the sub-monolayer deposition of InGaAs capping layer. (C) 2004 Elsevier B.V. All rights reserved.

Atomic hydrogen induced step bunching and fabrication of quantum wire arrays on GaAs (311)A substrate by molecular beam epitaxy

Atomic hydrogen assisted molecular beam epitaxy (MBE) is a novel type of epitaxial growth of nanostructures. The GaAs (311)A surface naturally forms one-dimensional step arrays by step bunching along the direction of (-233) and the space period is around 40nm. The step arrays extend over several mum without displacement. The InGaAs quantum wire arrays are grown on the step arrays as the basis. Our results may prompt further development of more uniform quantum wire and quantum dot arrays.

Substrate surface atomic structure influence on the growth of InAlAs quantum dots

We have examined the influence of substrate surface orientation on self-assembled InAlAs/AlGaAs quantum dots grown on (0 0 1) and (n 1 1) A/B (n = 3, 5) GaAs substrates by molecular beam epitaxy (MBE). Preliminary characterizations have been performed using photoluminescence (PL) and transmission electron microscopy (TEM). The PL emission energies of quantum dots on high Miller index surface are found to be strongly dependent on the atomic-terminated surface (A or B surface) of the substrate. We observed that there were planar ordering larger islands on (3 1 1)B surface compared to (0 0 1) surface, in contrast, a rough interface and smaller "grains" on (3 1 1)A surface, this result is identical with PL emission energy from these islands. We propose that the rapid strain-induced surface "roughening" impedes the formation of 3D islands on A surface, and indicating that this is a promising approach of the realization of ordering distribution on (3 1 1)B plane for devices such as red-emitting semiconductor quantum dots lasers. (C) 1999 Elsevier Science B.V. All rights reserved.

Characterization of self-organized InAs/GaAs quantum dots under strain-induced and temperature-controlled nucleation mechanisms by atomic force microscopy and photoluminescence spectroscopy

Atomic force microscopy and photoluminescence spectroscopy (PL) has been used to study asymmetric bilayer InAs quantum dot (QD) structures grow by molecular-beam epitaxy on GaAs (001) substrates. The two InAs layers were separated by a 7-nm-thick GaAs spacer layer and were grown at different substrate temperature. We took advantage of the intrinsic nonuniformity of the molecular beams to grow the seed layer with an average InAs coverage of 2.0 ML. Then the seed layer thickness could be divided into three areas: below, around and above the critical thickness of the 2D-3D transition along the 11101 direction of the substrate. Correspondingly, the nucleation mechanisms of the upper InAs layer (UIL) could be also divided into three areas: temperature-controlled, competition between temperature-controlled and strain-induced, and strain-induced (template-controlled) nucleation. Small quantum dots (QDs) with a large density around 5 x 10(10) cm(-2) are found in the temperature-controlled nucleation area. The QD size distributions undergo a bimodal to a unimodal transition with decreasing QD densities in the strain-induced nucleation area, where the QD densities vary following that of the seed layer (templating effect). The optimum QD density with the UIL thickness fixed at 2.4 ML is shown to be around 1.5 x 10(10) cm(-2), for which the QD size distribution is unimodal and PL emission peaks at the longest wavelength. The QDs in the in-between area exhibit a broad size distribution with small QDs and strain-induced large QDs coexisting.

The Uniaxial Tensile Deformation of Ni Nanowire: Atomic-Scale Computer Simulations

The mechanical deformations of nickel nanowire subjected to uniaxial tensile strain at 300 K are simulated by using molecular dynamics with the quantum corrected Sutten-Chen many-body force field. We have used common neighbor analysis method to investigate the structural evolution of Ni nanowire during the elongation process. For the strain rate of 0.1%/ps, the elastic limit is up to about 11% strain with the yield stress of 8.6 GPa. At the elastic stage, the deformation is carried mainly through the uniform elongation of the distances between the layers (perpendicular to the Z-axis) while the atomic structure remains basically unchanged. With further strain, the slips in the {111} planes start to take place in order to accommodate the applied strain to carry the deformation partially, and subsequently the neck forms. The atomic rearrangements in the neck region result in a zigzag change in the stress-strain curve; the atomic structures beyond the region, however, have no significant changes. With the strain close to the point of the breaking, we observe the formation of a one-atom thick necklace in Ni nanowire. The strain rates have no significant effect on the deformation mechanism, but have some influence on the yield stress, the elastic limit, and the fracture strain of the nanowire.

Atomic force microscopy observations of the topography of regenerated silk fibroin aggregations

How fibroin molecules fold themselves and further self-assemble into aggregations with specific structures when the solution concentration increases is the key to understanding the natural silk-forming process of the silkworm. A regenerated Bombyx mori silk fibroin solution was prepared, and serially diluted solutions were coated on aminated coverslips. Atomic force microscopy (AFM) observations of the topography of fibroin molecules revealed a transformation from rodlike aggregations 100-200 nm long to small globules 50 mn in diameter with decreasing concentrations. When the incubation duration increased, the aggregations of fibroin molecules showed a self-assembling process, which was measured with AFM. In particular, after the molecules were incubated for more than 20 min, rodlike micelles formed and were distributed evenly on the surface of the aminated slides. Flow chamber technology was used to study the effect of the shear loading on the topography of the fibroin molecular aggregations. After a shear loading was applied, larger rodlike particles formed at a higher incubation concentration in comparison with those at a lower concentration and were obviously oriented along the direction of fluid flow.

Quantum computation based on a quantum switch in cavity QED

A feasible scheme for constructing quantum logic gates is proposed on the basis of quantum switches in cavity QED. It is shown that the light field which is fed into the cavity due to the passage of an atom in a certain state can be used to manipulate the conditioned quantum logical gate. In our scheme, the quantum information is encoded in the states of Rydberg atoms and the cavity mode is not used as logical qubits or as a communicating "bus"; thus, the effect of atomic spontaneous emission can be neglected and the strict requirements for the cavity can be relaxed.

Electromagnetically induced negative refractive index in a V-type four-level atomic system

We propose a scheme for realizing negative refractive index in a V-type four-level atomic system. It is shown that the negative refractive index can be achieved in a wide frequency band based on the effect of quantum coherence. It is also found that the frequency band of negative refractive index and the absorption property of left-handed material are manipulated by the pump and control fields. Furthermore, left-handed material with reduced absorption is possible by choosing appropriate parameters. (c) 2006 Elsevier B.V. All rights reserved.

Scheme for unconventional geometric quantum computation in cavity QED

In this paper, we present a scheme for implementing the unconventional geometric two-qubit phase gate with nonzero dynamical phase based on two-channel Raman interaction of two atoms in a cavity. We show that the dynamical phase and the total phase for a cyclic evolution are proportional to the geometric phase in the same cyclic evolution; hence they possess the same geometric features as does the geometric phase. In our scheme, the atomic excited state is adiabatically eliminated, and the operation of the proposed logic gate involves only the metastable states of the atoms; thus the effect of the atomic spontaneous emission can be neglected. The influence of the cavity decay on our scheme is examined. It is found that the relations regarding the dynamical phase, the total phase, and the geometric phase in the ideal situation are still valid in the case of weak cavity decay. Feasibility and the effect of the phase fluctuations of the driving laser fields are also discussed.

Quantum superchemistry in an output coupler of coherent matter waves

We investigate the quantum superchemistry or Bose-enhanced atom-molecule conversions in a coherent output coupler of matter waves, as a simple generalization of the two-color photoassociation. The stimulated effects of molecular output step and atomic revivals are exhibited by steering the rf output couplings. The quantum noise-induced molecular damping occurs near a total conversion in a levitation trap. This suggests a feasible two-trap scheme to make a stable coherent molecular beam.

The dispersive properties of an excited-doublet four-level atomic system

We have investigated the dispersive properties of excited-doublet four-level atoms interacting with a weak probe field and an intense coupling laser field. We have derived an analytical expression of the dispersion relation for a general excited-doublet four-level atomic system subject to a one-photon detuning. The numerical results demonstrate that for a typical rubidium D1 line configuration, due to the unequal dipole moments for the transitions of each ground state to double excited states, generally there exists no exact dark state in the system. Close to the two-photon resonance, the probe light can be absorbed orgained and propagate in the so-called superluminal form. This system may be used as an optical switch.

First-principles study on rutile TiO2 quantum dots

The electronic structure of rutile TiO2 quantum dots (QDs) are investigated via the first-principles band structure method. We first propose a model to passivate the rutile TiO2 surfaces for the local density approximation calculations. In this model pseudohydrogen atoms are used to passivate the surface dangling bonds, which remove the localized in-cap surface states in the TiO2 QDs. As the size of the QD decreases, the band gap evolves as E-g(dot) = E-g(bulk) + 73.70/d(1.93), where E-g(dot) and d are the band gap and diameter of the QD, and E-g(bulk) is the band gap of the bulk rutile TiO2. The valence band maximum and the conduction band minimum states of the QDs are distributed mostly in the interior of the QDs, and they well inherit the atomic characteristics of those states of the bulk rutile TiO2.