Investigation on the static recording characteristic of super-resolution near-field structure with antimony mask layer

Static recording characteristic of super-resolution near-field structure with antimony (Sb) is investigated in this paper. The recording marks are observed by a scanning electron microscopy (SEM), a high-resolution optical microscopy with a CCD camera and an atomic force microscopy (AFM). The super-resolution mechanism is also analyzed based on these static recording marks. Results show that the light reaching on recording layer is composed of two parts, one is the linear transmissive light (propagating field) and the other is the nonlinear evanescent light in the optical near field. The evanescent light may be greatly enhanced in the center of the spot because Sb will transit from a semiconductor to a metal when it is melted under the high laser power irradiation. This local melted area in the spot center may be like a metal tip in the optical near field that can collect and enhance the information that is far beyond the diffraction limit, which leads to the super-resolution recording and readout. (c) 2005 Elsevier Ltd. All rights reserved.

Low-Power Super-resolution Readout with Antimony Bismuth Alloy Film as Mask layer

Sb-Bi alloy films are proposed as a new kind of super-resolution mask layer with low readout threshold power. Using the Sb-Bi alloy film as a mask layer and SiN as a protective layer in a read-only memory disc, the super-resolution pits with diameters of 380 nm are read out by a dynamic setup, the laser wavelength is 780 nm and the numerical aperture of pickup lens is 0.45. The effects of the Sb-Bi thin film thickness, laser readout power and disc rotating velocity on the readout signal are investigated. The results show that the threshold laser power of super-resolution readout of the Sb-Bi mask layer is about 0.5 mW, and the corresponding carrier-to-noise ratio is about 20 dB at the film thickness of 50 nm. The super-resolution mechanism of the Sb-Bi alloy mask layer is discussed based on its temperature dependence of reflection.

Low-temperature (10 K) infrared measurement of interstitial oxygen in heavily antimony-doped silicon via wafer thinning

A new technique is reported for the rapid determination of interstitial oxygen in heavily Sb-doped silicon. This technique includes wafer thinning and low-temperature 10 K infrared measurement on highly thinned wafers. The fine structure of the interstitial oxygen absorption band around 1136 cm(-1) is obtained. Our results show that this method efficiently reduces free-carrier absorption interference, allowing a high reliability of measurement, and can be used at resistivities down to 1 x 10(-2) Omega cm for heavily Sb-doped silicon.

Hydrothermal synthesis and thermoelectric transport properties of impurity-free antimony telluride hexagonal nanoplates

Impurity-free single-crystalline antimony telluride hexagonal nanoplates (see figure) are synthesized by a facile and quick hydrothermal treatment without any organic additives or templates. The inherent crystal structure is the driving force for the growth of these Sb2Te3 hexagonal nanoplates. Films of these nanoplates shows p-type behavior, and exhibit a promisingly high Seebeck coefficient of 425 mu V K-1 at room temperature.

Synthesis of poly(phenylenesulfidephenylenamine) by self-polycondensation of methyl-(4-anilinophenyl) sulfide with antimony pentachloride

Poly(phenylenesulfidephenylenamine)(PPSA) an alternating copolymer and the hybrid structure of poly(phenylene sulfide)(PPS) and polyaniline(PAn), was synthesized by self-polycondensation of methyl-(4-anilino-phenyl) sulfide with antimony pentachloride and by the acid-induced self-polycondensation of methyl-(4-anilino-phenyl) sulfoxide.

The behaviors and sources of dissolved arsenic and antimony in Bohai Bay

In this paper, we determined the concentrations of antimony species (antimonite (Sb(III)), antimonate (Sb(V)) and dissolved inorganic antimony (DISb)) and arsenic, in Bohai Bay seawaters, as well as the relationships of the analytes with environmental factors such as seawater characteristics (e.g., suspended particulate material (SPM), salinity and total organic carbon (TOC)), heavy metals, nutrients and phytoplankton species, and evaluated the sources of arsenic and antimony. Dissolved arsenic and antimony concentrations in the surface waters were ranging spatially from 1.03 to 1.26 ng/ml and 0.386 to 1.075 ng/ml, with mean values of 1.18 and 0.562 ng/ml, respectively. Sb(V) as the prominent chemical species constituted about 89%. Regarding arsenic concentrations in the surface waters, there was a tendency for a small variation. However, antimony species concentrations were much variable than arsenic. The highest arsenic and antimony concentrations were found near the Haihe Estuary. These distribution patterns were controlled mainly by environmental factors, biological activities and sources. In this region, DISb and Sb(V) negatively correlated with salinity. Besides, arsenic and antimony correlated well with the nutrients, chlorophyll a and phytoplankton, implying that arsenic and antimony had been involved in biological cycling. In addition, according to our estimate, about 333.5 x 10(8) mg/year of arsenic and 454.2 x 10(8) mg/year of antimony reached Bohai Bay via rivers. (C) 2010 Elsevier Ltd. All rights reserved.