Ab initio pair potentials at metal-ceramic interfaces

A systematic approach is proposed to obtain the interfacial interatomic potentials. By inverting ab initio adhesive energy curves for the metal-MgO ceramic interfaces, We derive interfacial potentials between Ag and O2-, Ag and Mg2+, Al and O2-, Al and Mg2+. The interfacial potentials, obtained from this method, demonstrate general features of bondings between metal atoms and ceramic ions.

Elasticity, stability, and ideal strength of beta-SiC in plane-wave-based ab initio calculations

On the basis of the pseudopotential plane-wave method and the local-density-functional theory, this paper studies energetics, stress-strain relation, stability, and ideal strength of beta-SiC under various loading modes, where uniform uniaxial extension and tension and biaxial proportional extension are considered along directions [001] and [111]. The lattice constant, elastic constants, and moduli of equilibrium state are calculated and the results agree well with the experimental data. As the four SI-C bonds along directions [111], [(1) over bar 11], [11(1) over bar] and [111] are not the same under the loading along [111], internal relaxation and the corresponding internal displacements must be considered. We find that, at the beginning of loading, the effect of internal displacement through the shuffle and glide plane diminishes the difference among the four Si-C bonds lengths, but will increase the difference at the subsequent loading, which will result in a crack nucleated on the {111} shuffle plane and a subsequently cleavage fracture. Thus the corresponding theoretical strength is 50.8 GPa, which agrees well with the recent experiment value, 53.4 GPa. However, with the loading along [001], internal relaxation is not important for tetragonal symmetry. Elastic constants during the uniaxial tension along [001] are calculated. Based on the stability analysis with stiffness coefficients, we find that the spinodal and Born instabilities are triggered almost at the same strain, which agrees with the previous molecular-dynamics simulation. During biaxial proportional extension, stress and strength vary proportionally with the biaxial loading ratio at the same longitudinal strain.

Ab initio investigation of the elasticity and stability of aluminium

On the basis of the pseudopotential plane-wave (PP-PW) method in combination with the local density functional theory (LDFT), complete stress-strain curves for the uniaxial loading and uniaxial deformation along the [001] and [111] directions, and the biaxial proportional extension along [010] and [001] for aluminium are obtained. During the uniaxial loading, certain general behaviours of the energy versus the stretch and the load versus the stretch are confirmed; in each case, there exist three special unstressed structures: f.c.c., b.c.c., and f.c.t. for [001]; f.c.c., s.c., and b.c.c. for [111]. Using stability criteria, we find that all of these states are unstable, and always occur together with shear instability, except the natural f.c.c. structure. A Pain transformation from the stable f.c.c. structure to the stable b.c.c. configuration cannot be obtained by uniaxial compression along any equivalent [001] and [111] direction. The tensile strengths are similar for the two directions. For the higher energy barrier of the [111] direction, the compressive strength is greater than that for the [001] direction. With increase in the ratio of the biaxial proportional extension, the stress and tensile strength increase; however, the critical strain does not change significantly. Our results add to the existing ab initio database for use in fitting and testing interatomic potentials.

Ab Initio Study Of Zno-Based Gas-Sensing Mechanisms: Surface Reconstruction And Charge Transfer

Density functional theory (DFT) calculations were employed to explore the gas-sensing mechanisms of zinc oxide (ZnO) with surface reconstruction taken into consideration. Mix-terminated (10 (1) over bar0) ZnO surfaces were examined. By simulating the adsorption process of various gases, i.e., H-2, NH3, CO, and ethanol (C2H5OH) gases, on the ZnO (10 (1) over bar0) surface, the changes of configuration and electronic structure were compared. Based on these calculations, two gas-sensing mechanisms were proposed and revealed that both surface reconstruction and charge transfer result in a change of electronic conductance of ZnO. Also, the calculations were compared with existing experiments.

Revised ab initio natural band offsets of all group IV, II-VI, and III-V semiconductors

Using an all-electron band structure approach, we have systematically calculated the natural band offsets between all group IV, III-V, and II-VI semiconductor compounds, taking into account the deformation potential of the core states. This revised approach removes assumptions regarding the reference level volume deformation and offers a more reliable prediction of the "natural" unstrained offsets. Comparison is made to experimental work, where a noticeable improvement is found compared to previous methodologies.

AB，ABA型乙丙嵌段共聚物的合成、结构及作为乙丙橡胶改性聚丙烯增容剂的研究

本文试图用Solvay型的Ziegler-Natta催化剂合成PP－EPR，PP－EPR－PP嵌段共聚物，作为乙丙橡胶（EPT）和聚丙烯（PP）的增容剂，来提高聚丙烯的抗冲击强度，并从力学性能、动态力学谱和形态等方面研究增容剂的增容效果。Ziegler-Natta催化剂能否合成乙丙嵌段共聚物是一个有争议的问题。为此，我们利用改进型的Solvay δ-TiCl_3-Et_2AlCl在已烷中加压淤浆聚合丙烯，发现在120分钟之前，聚丙烯的分子量随时间迅速增加，超过120分钟则变缓慢，并趋向于平衡。这说明催化剂活性中心上的活性链最小有120分钟的时间，若在该时间内用聚合过程中换反应单体的办法，有可能合成嵌段共聚物。乙丙嵌段共聚物形成的直接证明是利用(PP－PE)_(50)。通过气相色谱检测发现，抽真空3分钟可以保证换反应气体的纯度，因而用气相聚合可以得到各段纯净的(PP－PE)_(50)多嵌段共聚物，该嵌段的~(13)c-NMR研究表明，在35.68ppm处存在以化学键相连的长乙烯和长丙烯链的特征共振峰。PGC的研究发现，其在热裂解中产生的G碎片比PP／P混物的多，GC－MS的研究表明G碎片由含7个碳的烃组成的混合物，组分之一具有嵌段共聚物的裂解特征。对PP－EPR系列产物和PP－EPR－PP（5－60－20）用扭摆法进和动态力学分析表明，这些嵌段共聚物只在－30℃左右有一个玻璃化转变。而相应的共混物则分别在－50℃和5℃出现两个玻璃化转变，且各T_g不随组成比和共混方法而变化。这是由于嵌段共聚物中各段间化学键的作用，使各段的T_g内移，从而使较靠近的两个T_g合二为一，在动态力学谱上只表现出一个T_g。粘弹谱仪测定的结果基本上同扭摆法的结果。尽管我们尚未准确地测定出乙丙嵌段共聚物中EPR段的分子量，但我们弄清了PP段的立体构型、等规度、分子量、结晶度和EPR段的乙丙比、无规乙丙共聚物的含量、含有长序列乙烯的结晶度等结构因素。用不同段长的PP－EPR作PP／EPT共混物的增容剂，发现降低PP－EPR中PP段的分子量，三元共混物的力学性能明显升高，而增加EPR段的分子量即聚合时间，其无缺口冲击强度先增加而后又降低，说明有一个EPR段最佳长度范围。根据该现象我们提出模型并进行了解释。结晶度的规律与冲击强度的规律相同，对冲击强度提高较大的增容剂，共混物中PP的结晶度降低，但抗张性能却升高，说明增容剂在两相界面起到主价的连接作用。扭摆法和粘弹谱仪测定的动态力学谱表明，增容剂的加入减小了聚丙烯结晶无序化转变，使PP的T_g突出出来。形态的研究说明，PP－EPR还起了“乳化剂”的作用，使EPT在PP连续相中均匀分散，且其微区大小适中。在PP／EPT（85／15）中加入4％的PP－EPR（5－30）嵌段共聚物，室温（20℃）的“冲击屈服强度”与PP／EPT的相同，－20℃的冲击强度为112kg·cm/cm~2，是PP／EPT的1.5倍，－40℃为72kg·cm/cm~2，是PP／EPT的1.9倍，在应力－应变实验中，三元共混物PP／EPT／PP－EPR（5－30）的σ_b*ε_b为2.97*10~5。比相应的PP／EPT（2.27*10~5）有所提高。说明PP－EPR（5－30）对PP／EPT有良好的增容效果，比文献中使用的PP－EPR（15－55）效果好。用PP－EPR－PP三嵌段共聚物作PP／EPT的增容剂，实验证明比PP－EPR二嵌段共聚物有更好的增容效果。例如，在PP／EPT（85／15）中加入4％的PP－EPR－PP（5－60－20），试样不但在20℃，而且在－20℃均未被冲断；在－20℃的“冲击屈服强度”是PP／EPT冲击强度的1.4倍，PP的9.0倍，－40℃的冲击强度是PP／EPT的2.2倍，PP的8.4倍；且其σ_b*ε_b（2.62*10~5）比PP／EPT（2.60*10~5）的有一定的提高，比PP的（2.45*10~5）也高。对PP／EPT／PP－EPR－PP（5－60－20）三元共混物的试样在－40℃冲断面的形态进行研究表明，加入增容剂的共混物断面凹凸不平，是韧性断裂的特征，且在断裂过程中EPT微区被牵拉出的EPT较多，说明PP和EPT的相界面的作用力较大，增容剂起到了主价键的连接作用。动态力学谱表明，增容剂的加入降低了PP结晶无序化转变。而液氮冷冻的脆断面的形态说明，PP－EPR－PP起到了“乳化剂”的作用，使EPT在PP连续相中大小均匀地分散开。

I 蓖麻油聚氨酯/聚甲基丙烯酸甲酯AB交联聚合物的研究 II 双阳原油热处理中加入降凝剂的研究

用蓖麻油与TDI反应生成端异氰酸酯基预聚物，再与HEA反应，生成端乙烯基预聚物，以不同比例的MMA与端乙烯基预聚物共聚交联，得到一组组成和交联密度各不相同的ABCP样品；为了分别观察组成和交联密度对材料性能的影响，在交联共聚过程中，以二乙烯基苯作交联点调节剂 ，得到固定组成，交联密度变化和固定交联密度组成变化的两组样品；此外，在固化过程中加入不同含量的丙烯酸（<10%），得到另一组样品，以观察氢键对该体系的影响。反应过程中用化学分析、NMR、IR及平衡溶胀等方法测定反应程度、分子量及交联网的交联密度；同时用动态粘弹谱仪和介电损耗仪测定样品的动态力学性能，转变与松弛及相容性；用材料试验机测试样品的力学性能；通过透射电子显微镜观察材料的形态结构。结果表明：copu/PMMA ABCP是个半相容体系，随硬段含量的增加和交联密度的减小相容性变差。形态结构呈不规则形状，相区尺寸由几A变至几百A，材料的力学性能和阻尼性能明显优子构成它们的均聚物。材料的阻尼值主要受交联密度的影响，玻璃化转变温度则主要受组成控制。氢键对该体系的形态结构有明显影响，丙烯酸含量为7.5%时相容性最差，5%和10%时最好。以双阳昌10号井原油为研究对象选用EVA作原料，以马来酸酐接枝改性，合成ET-6降凝剂。采取在热处理中加入降凝剂的综合处理方法，考察了降凝剂合成的最佳反应条件和降凝剂用量及热处理温度对原油结晶状态及流动性的影响。结果表明，热处理中加入ET-6降凝剂可使蜡的结晶形态发生明显变化，降凝剂用量仅100-500 ppm即可使双阳原油的凝固点由原来的30-31 ℃降至7-9 ℃，原油的低温流动性大为改观。

INTERVALLEY-GAMMA-CHI DEFORMATION POTENTIALS IN III-V ZINCBLENDE AND SI SEMICONDUCTORS BY AB-INITIO PSEUDOPOTENTIAL CALCULATIONS

Intervalley GAMMA - X deformation potential constants (IVDP's) have been calculated by first principle pseudopotential method for the III-V zincblende semiconductors AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs and InSb. As a prototype crystal we have also carried out calculations on Si. When comparing the calculated IVDP's of LA phonon for GaP, InP and InAs and LO phonon for AlAs, AlSb, GaAs, GaSb and InSb with a previous calculation by EPM in rigid approximation, good agreements are found. However, our ab initio pseudopotential results of LA phonon for AlAs, AlSb, GaAs, GaSb and InSb and LO phonon for GaP, InP and InAs are about one order of magnitude smaller than those obtained by EPM calculations, which indicate that the electron redistributions upon the phonon deformations may be important in affecting GAMMA - X intervalley shatterings for these phonon modes when the anions are being displaced. In our calculations the phonon modes of LA and LO at X point have been evaluated in frozen phonon approximation. We have obtained, at the same time, the LAX and LOX phonon frequencies for these materials from total energy calculations. The calculated phonon frequencies agree very well with experimental values for these semiconductors.

Ab initio calculations for the neutral and charged O vacancy in sapphire

The energetics, lattice relaxation, and the defect-induced states of st single O vacancy in alpha-Al2O3 are studied by means of supercell total-energy calculations using a first-principles method based on density-functional theory. The supercell model with 120 atoms in a hexagonal lattice is sufficiently large to give realistic results for an isolated single vacancy (square). Self-consistent calculations are performed for each assumed configuration of lattice relaxation involving the nearest-neighbor Al atoms and the next-nearest-neighbor O atoms of the vacancy site. Total-energy data thus accumulated are used to construct an energy hypersurface. A theoretical zero-temperature vacancy formation energy of 5.83 eV is obtained. Our results show a large relaxation of Al (O) atoms away from the vacancy site by about 16% (8%) of the original Al-square (O-square) distances. The relaxation of the neighboring Al atoms has a much weaker energy dependence than the O atoms. The O vacancy introduces a deep and doubly occupied defect level, or an F center in the gap, and three unoccupied defect levels near the conduction band edge, the positions of the latter are sensitive to the degree of relaxation. The defect state wave functions are found to be not so localized, but extend up to the boundary of the supercell. Defect-induced levels are also found in the valence-band region below the O 2s and the O 2p bands. Also investigated is the case of a singly occupied defect level (an F+ center). This is done by reducing both the total number of electrons in the supercell and the background positive charge by one electron in the self-consistent electronic structure calculations. The optical transitions between the occupied and excited states of the: F and F+ centers are also investigated and found to be anisotropic in agreement with optical data.

氧合血红蛋白Fe-O2键合态ab initio研究

于2010-11-23批量导入