Light extraction of GaN LEDs with 2-D photonic crystal structure

Ultraviolet photo-lithography is employed to introduce two-dimensional (2D) photonic crystal (PC) structure on the top surface of GaN-based light emitting diode (LED). PC patterns are transferred to 460-nm-thick transparent indium tin oxide (ITO) electrode by inductively coupled plasma (ICP) etching. Light intensity of PC-LED can be enhanced by 38% comparing with the one without PC structure. Rigorous coupled wave analysis method is performed to calculate the light transmission spectrum of PC slab. Simulation results indicate that total internal reflect angle which modulated by PC structure has been increased by 7 degrees, which means that the light extraction efficiency is enhanced outstandingly.

Multifunctional organic-inorganic multilayer films of tris(2,2 '-bipyridine)ruthenium and decatungstate

A new multifunctional multilayer films consisting of tris(2,2'-bipyridyl)ruthenium(II) (Rubpy) and sodium decatungstate (W-10) have been prepared by the layer-by-layer (LbL) self-assembly method on ITO substrate. X-ray photoelectron spectra (XPS) confirmed the existence of W10 and Rubpy. Cyclic voltammetry (CV) and UV-Vis spectroscopy demonstrated the uniform assembly of (W-10/Rubpy) multilayer films. The multilayer films possess electrocatalytic activities on the reduction of iodate and oxidation of oxalate. Moreover, the films exhibited electrochemiluminescence (ECL) with tripropylamine (abbreviated as TPA) as the coreactant and the ECL response was proportional to the number of (W-10/Rubpy) layers. These characteristics of the multilayer films might find potential applications in the field of sensors and materials fields.