7.3 W of single-frequency output power at 2.09 μm from an Ho:YAG monolithic nonplanar ring laser

Single-frequency output power of 7.3 W at 2.09 mu m from a monolithic Ho:YAG nonplanar ring oscillator (NPRO) is demonstrated. Resonantly pumped by a Tm-doped fiber laser at 1.91 mu m, the Ho:YAG NPRO produces 71% of slope efficiency with respect to absorbed pump power and nearly diffraction-limited output with a beam quality parameter of M-2 approximate to 1.1. (c) 2008 Optical Society of America

Anti-HIV Activities of the Compounds Isolated from Polygonum cuspidatum and Polygonum multiflorum

The 70% EtOH extract of Polygonum cuspidatum showed inhibitory action against HIV-1-induced syncytium formation at non-cytotoxic concentrations in vitro with a 50% effective concentration (EC50) of 13.94 +/- 3.41 mu g/mL. Through bioactivity-guided fractionation, 20 phenolic compounds, including eight stilbenoids, were isolated from the roots of Polygonum cuspidatum, and their anti-HIV-1 activities were evaluated. Results showed that compounds 1, 13, 14, and 16 demonstrated fairly strong antiviral activity against HIV-1-induced cytopathic effects in C8166 lymphocytes at non-cytotoxic concentrations, with EC50 values of 4.37 +/- 1.96 mu g/mL, 19.97 +/- 5.09, 14.4 +/- 1.34 mu g/mL, and 11.29 +/- 6.26 mu g/mL and therapeutic index (TI) values of 8.12, > 10.02, > 13.89, and > 17.71, respectively. Other compounds showed either weak or no effects. Compound 6 also showed weak inhibition (153.42 +/- 19.25 mu g/mL); however, it possesses very good water solubility and showed almost no cytotoxicity (> 2000 mu g/mL), therefore achieving a fairly good TI (13.04). The activities of the two compounds (3 and 18) from Polygonum multiflorum were also assayed. The relationship between molecular structures and their bioactivities was also discussed.

Hydrogen sensors based on Pt-AlGN/AIN/GaN Schottky diode - art. no. 68291R

Pt/AlGaN/AlN/GaN Schottky diodes have been fabricated and characterized for H-2 sensing. Platinum (Pt) with a thickness of 20nm was evaporated on the sample to form the Schottky contact. The ohmic contact, formed by evaporated Ti/Al/Ni/Au metals, was subsequently annealed by a rapid thermal treatment at 860 degrees C for 30 s in N-2 ambience. Both the forward and reverse current of the device increased greatly when exposed to H-2 gas. The sensor's responses under different hydrogen concentrations from 500ppm to 10% H-2 in N-2 at 300K were investigated. A shift of 0.45V at 297K is obtained at a fixed forward current for switching from N-2 to 10% H-2 in N-2. Time response of the sensor at a fixed bias of 0.5 V was also measured. The turn-on response of the device was rapid, while the recovery of the sensor at N-2 atmosphere was rather slow. But it recovered quickly when the device was exposed to the air. The decrease in the barrier height of the diode was calculated to be about 160meV upon introduction of 10% H-2 into the ambient. The sensitivity of the sensor is also calculated. Some thermodynamics analyses have been done according to the Langmuir isotherm equation.

Measurement of K*(892)(0) and K-0 mesons in Al plus Al collisions at 1.9A GeV

A new measurement of subthreshold K*(892)(0) and K-0 production is presented. The experimental data complete the measurement of strange particles produced in Al + Al collisions at 1.9A GeV measured with the FOPI detector at SIS at GSI (Darmstadt). The K*(892)(0)/K-0 yield ratio is found to be 0.0315 +/- 0.006(stat.) +/- 0.012(syst.) and is in good agreement with the transport model prediction. These measurements provide information on the in-medium cross section of K+-pi(-) fusion, which is the dominant process in subthreshold K*(892)(0) production.

多晶Hg_(0.09)Cd_(0.91)Te薄膜的光电化学行为

富镉Hg_(1-x)Cd_xTe是一种新型的光电转换材料,已用于固体结太阳能光伏电池:ITO/CdS/Hg_(1-)Cd_xTe/Au。我们曾对Hg_(1-x)Cd_xTe的电沉积机理作过研究。最近我们用电沉积制备的Hg_(0.09)Cd_(0.91)Te多晶薄膜做成了液体结太阳能光电化学电池并观察到明显光电响应。

多晶富镉Hg_(1-x)Cd_xTe的电沉积及Hg_(0.09)Cd_(0.91)Te薄膜的光电化学行为

本文研究了在酸性CdSO_4+HTeO_2~+6HgCl_2 电解液中多晶富镉Hg_(1-x),Cd_(?),Te(x>0.5)的电沉积过程,实现了三种离子在同一电位下共沉积的技术。对在钛基底上沉积出的薄膜进行XRD,SEM和EDAX分析,结果表明薄膜为闪锌矿型的多晶结构,分布均匀连续。考察了(1—x)=0.09时多晶薄膜在多硫氧化还原电对液中的光电化学行为,光强为100mW/cm~2时,短路光电流I_(sc)=1.88mA/cm~2,开路光电压V_(oc)=0.25V,填充因子F·F=0.22。由光电化学光谱所确定出的禁带宽度E_g=1.26eV,Mott-schottky曲线给出了电极的平带电位φfb为—1.26V(vs.SCE),从而得到开路光电压V_(oc)可能达到的最大值为0.49V。因此,多晶富镉Hg_(1-x)Cd_xTe薄膜是一种很有潜力的光活性电极材料。