北京中小学生创造性思维的发展以及十三年前后之比较

This study investigated the major characteristics of creative thinking development for the school children in Beijing with paper/pencil tests. The “Creative Thinking Test” was executed. The representative samples were two groups of students who came from the classes in 3rd-grade to 12th-grade of normal schools in Beijing. The classes were selected at random, one grade one class. One group is composed of 387 students (218 males, 169 females) in 1993, the other is composed of 420 students (181 males, 239 females) in 2006. According to the data analysis, the major characteristics and the changes over the 13 years of the development of creative thinking for student were explored and discussed. 1) The development trends of three types of creative thinking were all flexuous increase with grade moving up. The mean score of elementary school students was the lowest. And scores of junior high school students and senior high school students were significant higher than elementary school students’. 2) The most rapid increase occurred from the 5th grade to 6th grade. 3) Slumps occurred in the 7th grade in PNE curve and also in the 9th and 12th grades in TPC curves. There was no slump in FGA curve. 4) The girl’s scores in PNE and TPC tests were significant better than boys’. No obvious gender difference was found in FGA test. 5) The scores of three creative thinking tests in 2006 were all better than those in 1993. Separately, the scores of FGA and TPC tests in 2006 were significant higher than the corresponding scores in 1993, and no significant difference was found in two PNE tests. 6) There was no significant difference in the maximum scores of the three creative thinking tests between 2006 and 1993. 7) The most rapid developing period of three types of creative thinking in 2006 were the 5th grade and the 6th grade. The same period in 1993 was from the 7th grade to 9th grade. 8) In 1993, there is no significant gender difference for each creative thinking test. In 2006, PNE and TPC results had remarkable gender difference that girls were higher than boys. No significant gender difference was found in FGA tests.

Direct Numerical Simulation of Passive Scalar in Decaying Compressible Turbulence

The passive scalars in the decaying compressible turbulence with the initial Reynolds number (defined by Taylor scale and RMS velocity) Re=72, the initial turbulent Mach numbers (defined by RMS velocity and mean sound speed) Mt=0.2-0.9, and the Schmidt numbers of passive scalar Sc=2-10 are numerically simulated by using a 7th order upwind difference scheme and 8th order group velocity control scheme. The computed results are validated with different numerical methods and different mesh sizes. The Batchelor scaling with k(-1) range is found in scalar spectra. The passive scalar spectra decay faster with the increasing turbulent Mach number. The extended self-similarity (ESS) is found in the passive scalar of compressible turbulence.

Numerical Study of Heat Transfer Mechanism in Turbulent Supercritical CO2 Channel Flow

Direct numerical simulation (DNS) of supercritical CO2 turbulent channel flow has been performed to investigate the heat transfer mechanism of supercritical fluid. In the present DNS, full compressible Navier-Stokes equations and Peng-Robison state equation are solved. Due to effects of the mean density variation in the wall normal direction, mean velocity in the cooling region becomes high compared with that in the heating region. The mean width between high-and low-speed streaks near the wall decreases in the cooling region, which means that turbulence in the cooling region is enhanced and lots of fine scale eddies are created due to the local high Reynolds number effects. From the turbulent kinetic energy budget, it is found that compressibility effects related with pressure fluctuation and dilatation of velocity fluctuation can be ignored even for supercritical condition. However, the effect of density fluctuation on turbulent kinetic energy cannot be ignored. In the cooling region, low kinematic viscosity and high thermal conductivity in the low speed streaks modify fine scale structure and turbulent transport of temperature, which results in high Nusselt number in the cooling condition of the supercritical CO2.

Interface cracking and particulate size effect in particle-reinforced metal-matrix composites

The mechanical behaviors of the ceramic particle-reinforced metal matrix composites are modeled based on the conventional theory of mechanism-based strain gradient plasticity presented by Huang et al. Two cases of interface features with and without the effects of interface cracking will be analyzed, respectively. Through comparing the result based on the interface cracking model with experimental result, the effectiveness of the present model can be evaluated. Simultaneously, the length parameters included in the strain gradient plasticity theory can be obtained.

Complex Transition of Double-Diffusive Convection in a Rectangular Enclosure with Height-to-Length Ratio Equal to 4: Part I

This is the first part of direct numerical simulation (DNS) of double-diffusive convection in a slim rectangular enclosure with horizontal temperature and concentration gradients. We consider the case with the thermal Rayleigh number of 10^5, the Pradtle number of 1, the Lewis number of 2, the buoyancy ratio of composition to temperature being in the range of [0,1], and height-to-width aspect ration of 4. A new 7th order upwind compact scheme was developed for approximation of convective terms, and a three-stage third-order Runge-Kutta method was employed for time advancement. Our DNS suggests that with the buoyancy ratio increasing form 0 to 1, the flow of transition is a complex series changing fromthe steady to periodic, chaotic, periodic, quasi-periodic, and finally back to periodic. There are two types of periodic flow, one is simple periodic flow with single fundamental frequency (FF), and another is complex periodic flow with multiple FFs. This process is illustrated by using time-velocity histories, Fourier frequency spectrum analysis and the phase-space rajectories.

New data on the morphology and systematic status of Spinitectus petrowi and Spinitectus gigi (Nematoda : Cystidicolidae) parasitic in catfishes in central China

Two little-known nematode species of the genus Spinitectus Fourment, 1883, S. petrowi Belous, 1965 (prevalence 25%, intensity 1-8) and S. gigi Fujita, 1927 (prevalence 10%, intensity 2-3), were collected from the gastrointestinal tract of the yellow catfish, Pelteobagrus fulvidraco (Richardson), from Liangzihu Lake, Hubei Province, central China, in September of 2002. The light and scanning electron microscopical examination of this material, supplemented by a few museum specimens of S. gigi collected from the catfish Clarias fuscus (Lacepede) in southern China, made it possible to study in detail the morphology of these parasite species and to redescribe them. The first species, whose correct name is S. petrowi Belous, 1965, exhibits some morphological features (e.g., unusually short vestibule, shape of pseudolabia and of the left spicule) not found in most other congeners; a unique feature is the presence of peculiar pairs of transversely oriented peg-like cuticular spines with rounded ends on the ventral surface of the female tail. Spinitectus gigi was found to have 28-31 cuticular spines in the first ring, relatively long distances between the 2nd-7th rings of spines, and anterior rings divided into 2 sectors; the excretory pore is located at the level of the 4th ring of cuticular spines; males posses 4 pairs of preanal- and 6 pairs of postanal caudal papillae and a pair of small phasmids. Spinitectus bagri Wang, Wu et Yu, 1993 and S. wulingensis Yu et Wang, 1997 are considered junior synonyms of S. petrowi, whereas S. clariasi Ky, 1971, S. ophicephali Ky, 1971 and S. yuanjiangensis Wang, Wit et Yu, 1997 are regarded to be junior synonyms of S. gigi. Spinitectus petrowi was not previously reported from China.

The status, limits and countermeasures in the development of the silicon microelectronics industry

In this paper.. the status and limits in the development of the silicon microelectronics industry are presented briefly. The key countermeasures given are use of the new structure materials and the new device structures.

Electronic states of InAs verfically-assembled quantum disks in magnetic fields and two-electron quantum-disk qubit

We have studied the single-electron and two-electron vertically-assembled quantum disks in an axial magnetic field using the effective mass approximation. The electron interaction is treated accurately by the direct diagonalization of the Hamiltonian matrix. We calculate the six criergy levels of single-electron quantum disks and the two lowest energy levels of two-electron quantum disks in an axial magnetic field. The change of the magnetic field as an effective potential strongly modifies the electronic structures. leading to splittings and crossings between levels The results demonstrate the switching between the around states with the total spins S = 0 and S = 1. The switching results in a qubit allowed to fabricate by current growth techniques.

Influence of fluorine on radiation-induced charge trapping in the SIMOX buried oxides

Charge trapping in the fluorinated SIMOX buried oxides before and after ionizing radiation has been investigated by means of C-V characteristics. Radiation-induced positive charge trapping which results in negative shift of C-V curves can be restrained by implanting fluorine ions into the SIMOX buried oxides. Pre-radiation charge trapping is suppressed in the fluorinated buried oxides. The fluorine dose and post-implantation anneal time play a very important role in the control of charge trapping.

Radiation response of partially-depleted MOS transistors fabricated in the fluorinated SIMOX wafers

Ionizing radiation response of partially-depleted MOS transistors fabricated in the, fluorinated SIMOX wafers has been investigated. The experimental data show that the, radiation-induced threshold voltage shift of PMOSFETs and NMOSFETs, as well as the radiation-induced increase of off-state leakage current of NMOSFETs can be restrained by implanting fluorine ions into the buried oxide of SIMOX wafers.

A simulation model of body contact structure in PD SOI analogue circuit

As a solution of accurate simulation of the body effect in PD SOI analogue circuit, a simulation model of distributed body contact resistance and parasitical capacitance is presented. Based on this model, we have designed and simulated a sense amplifier that applied to V a 0.8um PD SOI 64K SRAM.