4 resultados para 341.73

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<正> 眩晕是临床比较常见的一个病症。对于眩晕的病情轻重和治疗效果的评定,主要依靠病人的主诉与医生的判断,目前还没有客观指标。为此,我们住中医辨证治疗眩晕的研究中,用平衡仪对73例眩晕患者进行了平衡试验观察,现将观察结果报告于下。方法和结果一、观察方法眩晕的检测工具为平衡仪(又称重心仪)Gravicorder,由检测平台和放大器二部分组成。检测平台是一块铸铝板(800×800×200毫米~3),它的四角放在四个负荷传感器(BLR-1

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Adiabatic shear localization is a mode of failure that occurs in dynamic loading. It is characterized by thermal softening occurring over a very narrow region of a material and is usually a precursor to ductile fracture and catastrophic failure. This reference source is the first detailed study of the mechanics and modes of adiabatic shear localization in solids, and provides a systematic description of a number of aspects of adiabatic shear banding. The inclusion of the appendices which provide a quick reference section and a comprehensive collection of thermomechanical data allows rapid access and understanding of the subject and its phenomena. The concepts and techniques described in this work can usefully be applied to solve a multitude of problems encountered by those investigating fracture and damage in materials, impact dynamics, metal working and other areas. This reference book has come about in response to the pressing demand of mechanical and metallurgical engineers for a high quality summary of the knowledge gained over the last twenty years. While fulfilling this requirement, the book is also of great interest to academics and researchers into materials performance.

Table of Contents

1Introduction1
1.1What is an Adiabatic Shear Band?1
1.2The Importance of Adiabatic Shear Bands6
1.3Where Adiabatic Shear Bands Occur10
1.4Historical Aspects of Shear Bands11
1.5Adiabatic Shear Bands and Fracture Maps14
1.6Scope of the Book20
2Characteristic Aspects of Adiabatic Shear Bands24
2.1General Features24
2.2Deformed Bands27
2.3Transformed Bands28
2.4Variables Relevant to Adiabatic Shear Banding35
2.5Adiabatic Shear Bands in Non-Metals44
3Fracture and Damage Related to Adiabatic Shear Bands54
3.1Adiabatic Shear Band Induced Fracture54
3.2Microscopic Damage in Adiabatic Shear Bands57
3.3Metallurgical Implications69
3.4Effects of Stress State73
4Testing Methods76
4.1General Requirements and Remarks76
4.2Dynamic Torsion Tests80
4.3Dynamic Compression Tests91
4.4Contained Cylinder Tests95
4.5Transient Measurements98
5Constitutive Equations104
5.1Effect of Strain Rate on Stress-Strain Behaviour104
5.2Strain-Rate History Effects110
5.3Effect of Temperature on Stress-Strain Behaviour114
5.4Constitutive Equations for Non-Metals124
6Occurrence of Adiabatic Shear Bands125
6.1Empirical Criteria125
6.2One-Dimensional Equations and Linear Instability Analysis134
6.3Localization Analysis140
6.4Experimental Verification146
7Formation and Evolution of Shear Bands155
7.1Post-Instability Phenomena156
7.2Scaling and Approximations162
7.3Wave Trapping and Viscous Dissipation167
7.4The Intermediate Stage and the Formation of Adiabatic Shear Bands171
7.5Late Stage Behaviour and Post-Mortem Morphology179
7.6Adiabatic Shear Bands in Multi-Dimensional Stress States187
8Numerical Studies of Adiabatic Shear Bands194
8.1Objects, Problems and Techniques Involved in Numerical Simulations194
8.2One-Dimensional Simulation of Adiabatic Shear Banding199
8.3Simulation with Adaptive Finite Element Methods213
8.4Adiabatic Shear Bands in the Plane Strain Stress State218
9Selected Topics in Impact Dynamics229
9.1Planar Impact230
9.2Fragmentation237
9.3Penetration244
9.4Erosion255
9.5Ignition of Explosives261
9.6Explosive Welding268
10Selected Topics in Metalworking273
10.1Classification of Processes273
10.2Upsetting276
10.3Metalcutting286
10.4Blanking293
 Appendices297
AQuick Reference298
BSpecific Heat and Thermal Conductivity301
CThermal Softening and Related Temperature Dependence312
DMaterials Showing Adiabatic Shear Bands335
ESpecification of Selected Materials Showing Adiabatic Shear Bands341
FConversion Factors357
 References358
 Author Index369
 Subject Index375

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Semiconducting manganese silicide, Mn27Si47 and Mn15Si26, were obtained using mass-analyzed low energy dual ion beam epitaxy technique, Auger electron spectroscopy depth profiles showed that some of the Mn ions were deposited on single-crystal silicon substrate and formed a 37.5 nm thick Mn film, and the other Mn ions were successfully implanted into the Si substrate with the implantation depth of 618 nm. Some samples were annealed in the atmosphere of flowing N-2 at 840 degreesC. X-ray diffraction measurements showed that the annealing was beneficial to the formation of Mn27Si47 and Mn15Si26 (C) 2001 Published by Elsevier Science B.V.