南海北部湾23/25太阳区块海底工程地质调查与评价

<正> 本项成果,是承包美国太阳东方勘探公司任务而完成的。在系统分析总结了南海西部石油公司“南海—503工程地质取芯船”在南海北部湾23/25太阳区块所进行的测深、侧扫声纳、地震声学剖面测量,及4口孔深40米的工程地质浅钻土柱等材料的基础上,详细阐述了

Generation of 17-TW 23-fs pulses with a two-stage Ti : Sapphire amplifier at repetition rate 10 Hz

We have developed a two-stage Ti:sapphire amplifier system which can produce 17-TW/23-fs pulses at a repetition rate 10 MHz. A birefringent plate is used in the regenerative amplifier to alleviate gain narrowing, while an all-reflective cylindrical-mirror-based pulse stretcher and an acousto-optic programmable dispersive filter (AOPDF) are used to compensate for the higher order dispersion of the system.

Przewalskin A: A new C-23 terpenoid with a 6/6/7 carbon ring skeleton from Salvia przewalskii maxim

Przewalskin A (1), a novel C-23 terpenoid with a 6/6/7 carbon ring skeleton, was isolated from Salvia przewalskii. Its structure was determined by comprehensive 1D NMR, 2D NMR, and MS spectroscopic analysis and subsequently confirmed by a single-crystal X

单性生殖动物的进化

传统的观念认为 ,单性动物由于失去了重组机会 ,必然难以适应变化的环境 ,终将绝灭。但是已被发现的近 5 0种单性脊椎动物不仅没有因失去基因的重组和交换而绝灭 ,反而表现出强大的生命力。其有害突变积累和较长的生物演化历程之间的矛盾和在缺乏遗传重组情况下的进化机制是特别引人关注的重大生物学问题。简要论述了单性动物独特的基因组结构、存在历史及其进化途径 (突变、三倍化、异精雌核发育生殖方式和异精效应及生殖方式多样化 )。

Magneto - Transport of electron symmetric and antisymmrtric states in highly doped InGaAs/InAlAs single quantum well

Beating patterns in longitudinal resistance caused by the symmetric and antisymmetric states were observed in a heavily doped InGaAs/InAlAs quantum well by using variable temperature Hall measurement. The energy gap of symmetric and antisymmetric states is estimated to be 4meV from the analysis of beating node positions. In addition, the temperature dependences of the subband electron mobility and concentration were also studied from the mobility spectrum and multicarrier fitting procedure.

纳米硅薄膜光学性质的测定与研究

通过测定纳米硅薄膜的透射谱,建立计算模型计算得出薄膜样品的折射率、厚度、吸收系数和光能隙.计算结果表明这种半导体材料在620 nm波长附近的折射率约为3.4,计算得到的厚度与用台阶仪测量的结果吻合很好.在620 nm波长附近的吸收系数介于吸收系数较小的晶体硅与吸收系数较大的非晶硅之间,光能隙约为1.6 eV,两者都随晶态含量增大而呈减小趋势.

掺杂InGaAs/InAlAs单量子阱中电子对称态和反对称态磁输运研究

利用变温Hall测量研究了重掺杂InGaAs/InAlAs单量子阱中二维电子气,发现在量子阱中由于存在电子对称态和反对称态导致纵向电阻出现拍频现象.通过分析拍频节点位置,得到电子对称态和反对称态之间的能级间距为4meV.此外,通过迁移率谱方法和多载流子拟合过程研究了不同迁移率电子的浓度和迁移率随温度的变化关系.

具有AIN膜的半导体激光器的实验研究

于2010-11-23批量导入