Promoting strain relaxation of Si0.72Ge0.28 film on Si (100) substrate by inserting a low-temperature Ge islands layer in UHVCVD

A flat, fully strain-relaxed Si0.72Ge0.28 thin film was grown on Si (1 0 0) substrate with a combination of thin low-temperature (LT) Ge and LT-Si0.72Ge0.28 buffer layers by ultrahigh vacuum chemical vapor deposition. The strain relaxation ratio in the Si0.72Ge0.28 film was enhanced up to 99% with the assistance of three-dimensional Ge islands and point defects introduced in the layers, which furthermore facilitated an ultra-low threading dislocation density of 5 x 10(4) cm (2) for the top SiGe film. More interestingly, no cross-hatch pattern was observed on the SiGe surface and the surface root-mean-square roughness was less than 2 nm. The temperature for the growth of LT-Ge layer was optimized to be 300 degrees C. (C) 2008 Elsevier B.V. All rights reserved.

八种气体中28种杂质全分析技术及质量监控

于G批量导入至Hzhangdi

电子级气体N2、H2、O2、Ar、He、HCl、CO2、NH3 28种杂质分析技术及质量监控

于G批量导入至Hzhangdi

黄土高原不同类型旱区旱作粮田深层土壤干燥化特征

随降水量趋势性减少和粮食产量不断提高,黄土高原旱作粮田深层土壤干燥化现象日益显现。在黄土高原不同类型旱区,测定了32类旱作粮田0~600 cm土层土壤湿度,分析和比较了各类粮田深层土壤贮水量、土壤湿度剖面分布和土壤干燥化强度。结果表明:①32类旱作粮田0~600 cm土层土壤湿度、土壤贮水量和土壤有效贮水量分别为13.90%、1084.4 mm和573.7 mm,其中有16类粮田发生了土壤干燥化现象,土壤水分过耗量平均值85.1 mm;②有28类旱作粮田100~400 cm土层为土壤干层,其中夏粮田土壤干层厚度大于秋粮田,最大耗水深度接近或超过600 cm;③32类旱作粮田和16类干燥化粮田土壤干燥化指数分别为110%和83%,分别属于无干燥化和轻度干燥化强度,土壤干层厚度平均值为267 cm,以半干旱偏旱区粮田土壤干燥化程度最严重。

In_(0.28)Ga_(0.72)As/GaAs量子点超晶格的生长

于2010-11-23批量导入