2W Yb-doped double-clad fiber superfluorescent source with 42 nm 3 dB bandwidth

The output spectrum of Yb-doped double-clad fiber superfluorescent source (SFS) is tailored by placing a broadband dichroic mirror in the pump end of conventional single-pass forward configuration, which constitutes double-pass forward configuration. The 3 dB bandwidth is increased from I I to 42 nm. A maximum output SFS power of 2.12 W and a slope efficiency of 43.2% are obtained. The double-clad fiber is 25 in and the pump power is adequate to saturate the fiber as far as the feedback-induced lasing appears. (c) 2004 Elsevier Ltd. All rights reserved.

Evidence of gene conversion in the evolutionary process of the codon 41/42 (-CTTT) mutation causing beta-thalassemia in southern China

The 4-bp deletion (-CTTT) at codon 41/42 (CD41/42) of the human beta-globin gene represents one of the most common beta-thalassemia mutations in East Asia and Southeast Asia, which is historically afflicted with endemic malaria, thus hypothetically evolvi

Effects of growth temperature of AlGaN buffer layer on the properties of A1(0.58)Ga(0.42)N epilayer by NH3-MBE

Al0.58Ga0.42N epilayers are grown by ammonia gas source molecular beam epitaxy (NH3-MBE) on (0001) sapphire substrate using AlGaN buffer layer. The effects of the buffer layer growth temperature on the properties of Al0.58Ga0.42N epilayer are especially investigated. In-situ high-energy electron diffraction (RHEED), double-crystal X-ray diffraction (DCXRD), atomic force microscopy (AFM), photoconductivity measurement and cathodoluminescence (CL) are used to characterize the samples. It is found that high growth temperature of AlGaN buffer layer would improve the crystalline quality, surface smoothness, optical quality and uniformity of the Al0.58Ga0.42N epilayer. The likely reason for such improvements is also suggested. (C) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

1.3 mu m high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy

High structural and optical quality 1.3 mu m GaInNAs/GaAs quantum well (QW) samples with 42.5% indium content were successfully grown by molecular beam epitaxy. The growth of well layers was monitored by reflection high-energy electron diffraction (RHEED). Room temperature photoluminescence (PL) peak intensity of the GaIn0.425NAs/GaAs (6 nm / 20 nm) 3QW is higher than, and the full width at half maximum (FWHM) is comparable to, that of In0.425GaAs/GaAs 3QW, indicating improved optical quality due to strain compensation effects by introducing N to the high indium content InGaAs epilayer. The measured (004) X-ray rocking curve shows clear satellite peaks and Pendellosung fringes, suggesting high film uniformity and smooth interfaces. The cross sectional TEM measurements further reveal that there are no structural defects in such high indium content QWs. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

42 MeV/u~(12)C与~(115)In反应的靶余核

本实验使用放射化学方法测定了42 MeV/u (12)C与~(115)In相互作用靶余核的生成截面。借助高斯电荷分布的假设得到了靶余核的质量分布。将实验得到的质量分布与熔合碎裂模型和级联的两体衰变模型进行了比较。特别值得注意的是，使用统计的两体衰变模型Monte Carlo GEMINI程序计算第一次与实验结果符合得非常满意。同时计算结果也表明：在42MeV/u的轰击能量下，完全熔合对靶余核的产物仍然有很大的贡献。在同样的假设下，得到了靶余核的同位素分布。可以看到，同位素分布的宽度随靶余核原子序数的增加而增加，在此对利用中能重离子反应生成新的远离β稳定线的缺中子核素进行了讨论

文冠果壳苷对侧脑室注射Aβ_(1-42)致小鼠学习记忆障碍的改善作用

目的研究文冠果壳苷对侧脑室注射β肽淀粉样蛋白1-4(2Aβ1-42)小鼠学习记忆障碍的改善作用,并初步探讨了其作用机制。方法通过避暗和水迷宫实验检测了小鼠的学习记忆能力;使用分光光度计检测小鼠大脑组织中乙酰胆碱酯酶(AchE)和胆碱乙酰转移酶(ChAT)活性的变化。结果小鼠侧脑室注射凝聚态Aβ1-42显著降低了小鼠被动回避学习记忆能力及空间学习记忆能力(P<0.01),并且小鼠大脑AchE和ChAT活性显著降低(P均<0.05);而文冠果壳苷能够显著减少避暗错误次数,延长潜伏期(分别P<0.05、P<0.01);剂量依赖性地缩短水迷宫实验中小鼠到达安全台的游泳时间(分别P<0.05、P<0.01),不同程度地抑制Aβ1-42模型小鼠的AchE和ChAT活性的降低(P<0.05和<0.01)。结论文冠果壳苷对侧脑室注射Aβ1-42小鼠学习记忆障碍具有显著的改善作用,其作用机制可能与保护中枢胆碱能神经细胞,改善中枢胆碱能神经系统功能等有关。

新型化合物[Ni(en)_3]_2[Ni(en)_2(H_2O)_2]·[As_6V_(15)O_(42)]·4H_2O晶体的水热合成与表征

多金属氧酸盐因其在医药临床、工业催化、功能材料等方面的广泛应用而引起人们的关注 [1～ 6 ] ,其中 ,有关钒化学的研究一直很活跃 ,钒具有与钼、钨明显不同的结构特性 ,钒可以采取 VO4 ,VO5和VO6 方式配位 ,同时 ,钒的价态可以是 + 3,+ 4和 + 5价 .由于钒可采取多种配位方式及多种价态 ,与钼酸盐和钨酸盐相比 ,钒酸盐更具有结构柔顺性 ,同时易形成低价或混合价态物种 .在以往的文献中 ,有关 P- V- O体系多金属氧酸盐的水热合成的研究已有大量的报道 [7] ,在常规溶液合成中 ,人们已对As- V- O体系进行了相对深入的研究 ,而有关水热合成的研究报道却很少 ,已见报道的砷钒化合物有K6 [As6 V15O4 2 ( H2 O) ]· 6H2 O[8,9] ,[As8V14 O4 2 ( H2 O) 1/2 ]4 - [10 ] ,[As8V14 O4 2 ( X) ]6 - [11] ( X=SO2 - 3,SO2 - 4,H2 O) .为了探究水热条件下 As- V- O体系的反应特性 ,我们开展了这方面的研究工作 ,并取得了突破性进展 .本文采用中温水热技术合成了含有机基团...