Promoting strain relaxation of Si0.72Ge0.28 film on Si (100) substrate by inserting a low-temperature Ge islands layer in UHVCVD

A flat, fully strain-relaxed Si0.72Ge0.28 thin film was grown on Si (1 0 0) substrate with a combination of thin low-temperature (LT) Ge and LT-Si0.72Ge0.28 buffer layers by ultrahigh vacuum chemical vapor deposition. The strain relaxation ratio in the Si0.72Ge0.28 film was enhanced up to 99% with the assistance of three-dimensional Ge islands and point defects introduced in the layers, which furthermore facilitated an ultra-low threading dislocation density of 5 x 10(4) cm (2) for the top SiGe film. More interestingly, no cross-hatch pattern was observed on the SiGe surface and the surface root-mean-square roughness was less than 2 nm. The temperature for the growth of LT-Ge layer was optimized to be 300 degrees C. (C) 2008 Elsevier B.V. All rights reserved.

八种气体中28种杂质全分析技术及质量监控

于G批量导入至Hzhangdi

电子级气体N2、H2、O2、Ar、He、HCl、CO2、NH3 28种杂质分析技术及质量监控

于G批量导入至Hzhangdi

In_(0.28)Ga_(0.72)As/GaAs量子点超晶格的生长

于2010-11-23批量导入

高电荷态离子~(129)Xe~(28+)与Au和Mo表面作用产生的X射线谱

研究了高电荷态离子129Xe28+轰击金属Au和Mo表面产生的特征X射线谱。实验结果表明,在入射离子的电荷态和能量相同的条件下,对于核电荷数较小、原子质量较轻的靶原子,只有其内壳层的电子才能被激发而产生X射线,而核电荷数较大、原子质量较重的靶原子只有其较外壳层的电子能被激发而产生X射线。特征X射线的产额随入射离子动能的增加而增加。

~(27,28)P+~(28)Si总反应截面增强及可能相关的机制

测量了27,28P和相应同中子异位素在28Si靶上的中能反应截面.测得N=12和13同中子异位素的反应截面在Z=15处突然增大.对Z≤14同中子异位素和28P的实验数据结果可以用改进的光学极限近似的Glauber理论很好地描述.28P的反应截面能够用扩大核芯以改进的Glauber理论来解释.但是,用改进光学极限和少体近似的Glauber理论却低估了27P的实验数据.理论分析表明,扩大的核芯加质子晕可能是响应27P+28Si反应截面增强的机制.

丰中子核~6He在~(28)Si靶上的反应总截面测量

实验测量了20—40MeV u的轻丰中子核6He在Si靶上的反应总截面,并且结合6He的高能实验数据,采用双参数HO密度分布形式用Glauber模型计算得到较好的拟合.与Warner的实验数据比较,反应总截面数据系统性好,并与能量有明显的依赖关系.