郭永怀先生诞辰九十周年纪念文集

目录

燃烧物理学基础

植生克雷伯氏菌（Klebsiella planticola 19-1）nifA-like基因的克隆

植生克雷伯氏菌(Klebsiella planticola 19-1)是从新疆鄯善地区玉米根际分离得到的一株联合固氮菌。在40℃高温下有较强的乙炔还原活性。 本工作利用Southern Blot分子杂交技术, 以Klebsiella pneumoniae的nifA为探针，证明了在K．planticola 19-1中存在nifA-like基因，由nifH-lacZ实验推论其nifA-like基因产物对高温相对稳定。经过大质粒电泳和Southern Blot分子杂交，发现nifA-like基因定位于染色体外的大质粒上。本工作进一步克隆了含有K．plonticola 19-1的nifA-like基因的DNA片段，做了它的限制性酶切图谱，并将nifA-like基因初步定位。

The Homology and Relationship of Human (Homo sapiens) Chromosomes 1, 19 and Dusky Langur (Trachypithacus obscurus) Chromosomes 6, 8 Demonstrated with Chromosome Painting

http://www.jstage.jst.go.jp/

Polymorphisms in the C-type lectin genes cluster in chromosome 19 and predisposition to severe acute respiratory syndrome coronavirus (SARS-CoV) infection

Background: Polymorphisms of CLEC4M have been associated with predisposition for infection by the severe acute respiratory syndrome coronavirus (SARS-CoV). DC-SIGNR, a C-type lectin encoded by CLEC4M, is a receptor for the virus. A variable number tandem

香溪河水系附石藻类的时空动态

香溪河系长江三峡水库湖北库区内第一大支流.对香溪河2005年7月—2006年6月干流及主要支流上12个样点的附石藻类进行调查,共观察到藻类218种,其中硅藻183种、绿藻24种、蓝藻10种、黄藻1种,硅藻门的线形曲壳藻为绝对优势种.其物种丰富度和Shannon-Wiener多样性指数时空动态差异显著(或接近显著),总平均值分别为32和1.54.附石藻类密度和叶绿素a含量年总平均值分别为8.75×109cells.m-2和14.62 mg.m-2.不同样点的藻类密度和叶绿素a含量差异显著,其中古夫河支流最高

梁子湖湿地植物多样性现状与评价

根据1999~2001年的野外调查数据,研究了湖北梁子湖湿地浮游藻类和高等植物多样性资源.结果表明,该湿地常见浮游藻类73种,隶属于7门58属(绿藻28种,硅藻19种,蓝藻14种,金藻4种,裸藻3种,甲藻3种,隐藻2种);高等植物282种,隶属于72科183属(苔藓8种,蕨类9种,裸子植物3种,被子植物262种),其中国家重点保护野生植物5种.浮游藻类密度和生物量均值分别为(1163.79913.51)104cell/L和6.1342.737mg/L,叶绿素a含量12.754.98mg/L,浮游藻类表层日

A narrow photoluminescence linewidth of 19.2 meV at 1.35 mu m from In0.5Ga0.5As/GaAs quantum island structure grown by molecular beam epitaxy

A self-organized In0.5Ga0.5As/GaAs quantum island structure emitting at 1.35 mum at room temperature has been successfully fabricated by molecular beam epitaxy via cycled (InAs)(1)/GaAs)(1)monolayer deposition method. The photoluminescence measurement shows that a very narrow linewidth of 19.2 meV at 300 K has been reached for the first time, indicating effective suppression of inhomogeneous broadening of optical emission from the In0.5Ga0.5As island structure due to indium segregation reduction by introducing an AlAs layer and the strain reduction by inserting an In0.2Ga0.8As layer overgrown on the top of islands. The mound-like morphology of the islands elongated along the [1 (1) over bar0] azimuth are observed by the atomic force microscopy measurement, which reveals the fact that strain in the islands is partially relaxed along the [1 (1) over bar0] direction. Our results present important information for the fabrication of 1.3 mum wavelength quantum dot devices.