植生克雷伯氏菌（Klebsiella planticola 19-1）nifA-like基因的克隆

植生克雷伯氏菌(Klebsiella planticola 19-1)是从新疆鄯善地区玉米根际分离得到的一株联合固氮菌。在40℃高温下有较强的乙炔还原活性。 本工作利用Southern Blot分子杂交技术, 以Klebsiella pneumoniae的nifA为探针，证明了在K．planticola 19-1中存在nifA-like基因，由nifH-lacZ实验推论其nifA-like基因产物对高温相对稳定。经过大质粒电泳和Southern Blot分子杂交，发现nifA-like基因定位于染色体外的大质粒上。本工作进一步克隆了含有K．plonticola 19-1的nifA-like基因的DNA片段，做了它的限制性酶切图谱，并将nifA-like基因初步定位。

The Homology and Relationship of Human (Homo sapiens) Chromosomes 1, 19 and Dusky Langur (Trachypithacus obscurus) Chromosomes 6, 8 Demonstrated with Chromosome Painting

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Polymorphisms in the C-type lectin genes cluster in chromosome 19 and predisposition to severe acute respiratory syndrome coronavirus (SARS-CoV) infection

Background: Polymorphisms of CLEC4M have been associated with predisposition for infection by the severe acute respiratory syndrome coronavirus (SARS-CoV). DC-SIGNR, a C-type lectin encoded by CLEC4M, is a receptor for the virus. A variable number tandem

A narrow photoluminescence linewidth of 19.2 meV at 1.35 mu m from In0.5Ga0.5As/GaAs quantum island structure grown by molecular beam epitaxy

A self-organized In0.5Ga0.5As/GaAs quantum island structure emitting at 1.35 mum at room temperature has been successfully fabricated by molecular beam epitaxy via cycled (InAs)(1)/GaAs)(1)monolayer deposition method. The photoluminescence measurement shows that a very narrow linewidth of 19.2 meV at 300 K has been reached for the first time, indicating effective suppression of inhomogeneous broadening of optical emission from the In0.5Ga0.5As island structure due to indium segregation reduction by introducing an AlAs layer and the strain reduction by inserting an In0.2Ga0.8As layer overgrown on the top of islands. The mound-like morphology of the islands elongated along the [1 (1) over bar0] azimuth are observed by the atomic force microscopy measurement, which reveals the fact that strain in the islands is partially relaxed along the [1 (1) over bar0] direction. Our results present important information for the fabrication of 1.3 mum wavelength quantum dot devices.