High-power and long-lifetime InAs/GaAs quantum-dot laser at 1080 nm

High power and long lifetime have been demonstrated for a semiconductor quantum-dot (QD) laser with five-stacked InAs/GaAs QDs separated by an InGaAs strain-reducing layer (SRL) and a GaAs spacer layer as an active medium. The QD lasers exhibit a peak power of 3.6 W at 1080 nm, a quantum slope efficiency of 84.6%, and an output-power degradation rate of 5.6%/1000 h with continuous-wave constant-current operation at room temperature. A comparative reliability investigation indicates that the lifetime of the InAs/GaAs QD laser with the InGaAs SRL is much longer than that of a QD laser without the InGaAs SRL. This improved lifetime of the QD laser could be explained by the reduction of strain in and around InAs QDs induced by the InGaAs SRL. (C) 2001 American Institute of Physics.

Observation of a Possible New Isomer in Ir-175

The neutron deficient nuclide Ir-175 was produced by irradiation of Nd-146 with 210 MeV Cl-35 via a fusion-evaporation reaction channel. The reaction products were transported to a low-background location using a helium-jet recoil fast-moving tape-transport system for measurement. The experimental devices and data analysis method are introduced. Based on the decay-curve fitting of the beta-delayed gamma ray from Ir-175, realized by the least-square method, a new long-lived isomeric state of Ir-175 is proposed and briefly discussed.