Direct Numerical Simulation of Supersonic Turbulent Boundary Layer Flow

Direct numerical simulations of a spatially evolving supersonic flat-plate turbulent boundary layer flow with free Mach number M = 2.25 and Reynolds number Re = 365000/in are performed. The transition process from laminar to turbulent flow is obtained by solving the three-dimensional compressible Navier-Stokes, equations, using high-order accurate difference schemes. The obtained statistical results agree well with the experimental and theoretical data. From the numerical results it can be seen that the transition process under the considered conditions is the process which skips the Tolimien-Schlichting instability and the second instability through the instability of high gradient shear layer and becomes of laminar flow breakdown. This means that the transition process is a bypass-type transition process. The spanwise asymmetry of the disturbance locally upstream imposed is important to induce the bypass-type transition. Furthermore, with increasing the time disturbance frequency the transition will delay. When the time disturbance frequency is large enough, the transition will disappear.

Hit-or-miss representation of a pattern spectrum and its optical implementation

We demonstrate that a pattern spectrum can be decomposed into the union of hit-or-miss transforms with respect to a series of structure-element pairs. Moreover we use a Boolean-logic function to express the pattern spectrum and show that the Boolean-logic representation of a pattern spectrum is composed of hit-or-miss min terms. The optical implementation of a pattern spectrum is based on an incoherent optical correlator with a feedback operation. (C) 1996 Optical Society of America

基于基频分量消光的1/4波片快轴标定方法

提出了一种基于基频分量消光的波片快轴标定方法,并利用琼斯矩阵对其标定原理进行了分析。激光器、起偏器、相位调制器、待标定1/4波片、检偏器和光电探测器构成标定光路,起偏器、检偏器的透光轴与相位调制器的振动轴分别成+45°和0°夹角。准直激光束依次经过起偏器、相位调制器、待标定1/4波片和检偏器,由光电探测器接收。理论分析表明该标定方法标定精度主要取决于检偏器的定位误差。实验验证了该标定方法的有效性,1/4波片快轴标定结果的最大偏差为0.043°,标准差为0.012°,标定精度为0.05°。

Polarizing beam splitter of deep-etched triangular-groove fused-silica gratings

We investigated the use of a deep-etched fused-silica grating with triangular-shaped grooves as a highly efficient polarizing beam splitter (PBS). A triangular-groove PBS grating is designed at a wavelength of 1550 nm to be used in optical communication. When it is illuminated in Littrow mounting, the transmitted TE- and TM-polarized waves are mainly diffracted in the minus-first and zeroth orders, respectively. The design condition is based on the average differences of the grating mode indices, which is verified by using rigorous coupled-wave analysis. The designed PBS grating is highly efficient over the C+L band range for both TE and TM polarizations (> 97.68 %). It is shown that such a triangular-groove PBS grating can exhibit a higher diffraction efficiency, a larger extinction ratio, and less reflection loss than the binary-phase fused-silica PBS grating. (C) 2008 Optical Society of America.

Influences of radiation trapping on spectroscopic properties of Er3+-doped fluorophosphate glasses

Fluorophosphate glasses with different contents of ErF3 were prepared. Due to the radiation trapping of Er, concentration dependence of the fluorescence lifetime is subject to distortion, and the stimulated-emission cross section calculated by the Fuchtbauer-Ladenburg equation is underestimated. The influence of radiation trapping on the measured fluorescence lifetime and width are investigated quantitatively. By comparing the intensity ratio of the 1556-1532 nm peak in the fluorescence spectrum with that in the stimulated-emission cross-section spectrum obtained according to the McCumber theory, the distortion ratio of fluorescence spectrum due to radiation trapping is obtained. An empirical way to quantitatively evaluate the influences of radiation trapping on fluorescence lifetime and width is proposed. (c) 2007 Optical Society of America.

鞭毛虫的扫描电镜样品制备

针对鞭毛虫样品制备中的难点,以Bodomorphaminima ,Hollande 1942为材料,对一类个体微小的异养性鞭毛虫的扫描电镜样品的制备做了初步探讨。以载玻片为载体,0 .1%的多聚赖氨酸为粘附剂,2 %的戊二醛为固定剂,采用临界点法干燥,获得了较为满意的扫描电镜照片。该技术可简化样品制备步骤,减少样品损失,对于其他原生动物样品和游离细胞样品扫描电镜的制备也有积极的借鉴意义。

Hillocks and hexagonal pits in a thick film grown by HVPE

A GaN film with a thickness of 250 mu m was grown on a GaN/sapphire template in a vertical hydride vapor phase epitaxy (HVPE) reactor. The full-width at half-maximum (FWHM) values of the film were 141 and 498 arcsec for the (0 0 2) and (1 0 2) reflections, respectively. A sharp band-edge emission with a FWHM of 20 meV at 50 K was observed, which corresponded to good crystalline quality of the film. Some almost circular-shaped hillocks located in the spiral growth center were found on the film surface with dimensions of 100 mu m, whose origin was related to screw dislocations and micropipes. Meanwhile, large hexagonal pits also appeared on the film surface, which had six triangular {1 0 (1) over bar 1} facets. The strong emission in the pits was dominated by an impurity-related emission at 377 nm, which could have been a high-concentration oxygen impurity. (c) 2008 Elsevier Ltd. All rights reserved.

Proof of solid state cathodoluminescence by using brightness waveform

Three different inorganic-organic hetero-junctions (A : ITO/SiO2/Alq(3)/Al, B: ITO/Alq3/SiO2/Al and C: ITO/SiO2/Alq(3)/ SiO2/Al) were fabricated. The emission can be observed only under positive bias in devices A and B, but under both biases in device C according to their brightness waveforms. With increasing voltage, the increase in blue emission in devices B and C is faster than that in green emission. This is because that the recombination of hot electrons and holes, i.e., electron-hole pairs, produced blue emission in devices B and C, and the recombination of electrons injected from Al with the accumulated holes, which are excited by hot electrons, produced green emission in device A. Hence, the emissions of the devices are attributed to not only the recombination of electrons and accumulated holes, but also the cathodoluminescence-like (CL-like) emission.

Electron diffraction and photoemission studies of clean and water-covered Si(5,5,12) and Si(112) surfaces

The structure of silicon surfaces in the orientation range (113)-(5,5,12)-(337)-(112) has been investigated using high resolution LEED and photoemission both on a spherical and on flat samples. We find that Si(5,5,12) [5.3 degrees from (113) and 0.7 degrees from (937)] is the only stable orientation between (113) and (111) and confirm the result of Baski et al. [Science 269, 1556 (1995)] that it has a 2 x 1 superstructure with a very large unit cell of 7.68 x 53.5 Angstrom(2). Adsorption measurements of water on Si(5,5,12) yield a mobile precursor kinetics with two kinds of regions saturating at 0.25 and 0.15 ML which are related to adsorption on different sites. Using these results, a modified structure model is proposed. Surfaces between (113) and (5,5,12) separate into facets of these two orientations; between (5,5,12) and (112), they separate into (5,5,12) and (111) facets. (337) facets in this range may be considered as defective (5,5,12) facets.