Characterization of Air-Water Two-Phase Vertical Flow by Using Electrical Resistance Imaging

The characterization of air-water two-phase vertical flow in a 12 m flow loop with 1.5 m of vertical section is studied by using electrical resistance tomography (ERT). By applying a fast data collection to a dual-plane ERT sensor and an iterative image reconstruction algorithm, relevant information is gathered for implementation of flow characteristics, particularly for flow regime recognition. A cross-correlation method is also used to interpret the velocity distribution of the gas phase on the cross section. The paper demonstrates that ERT can now be deployed routinely for velocity measurements and this capability will increase as faster measurement systems evolve.

利用力致分子动力学模拟方法构建剪切流场

国家自然科学基金项目(30730032/10702075)

混凝土高坝裂缝光纤分布式监测能力的研究

基于单点裂缝模型试验结果分析,提出了一种利用瑞利散射的工程结构裂缝光纤监测复用能力的方法,得到水工混凝土裂缝光纤监测两种典型方案的裂缝复用能力,结合三峡工程泄洪坝段上游面出现的裂缝,进行了光纤裂缝传感复用能力的工程适用性分析,进一步揭示工程裂缝光纤分布式监测能力研究的意义.

Photoluminescence of undoped and B-doped ZnO in silicate glasses

Photoluminescence of undoped and B-doped ZnO in silicate glasses was investigated by varying the concentration of ZnO (3550 mol%) and B dopant (0-10 mol%) in the glass matrices. The broad and intense near band edge emissions were observed while the visible light emission was very weak. UV luminescence in all samples was red-shifted relative to the exciton transition in bulk ZnO and enhanced by decreased ZnO concentration due to higher degree of structural integrity and the lower aggregation degree of ZnO. Donor B dopant played the double roles of filling conduction bands to broaden band gap when its concentration was lower than 5 mol%, and emerging with conduction bands to narrow the gap when B dopant exceeded this value. (c) 2007 Elsevier B.V. All rights reserved.

厚颌鲂(Megalobrama pellegrini)的繁殖生物学特征

从长江上游一级支流龙溪河收集了1382尾厚颌鲂开展繁殖生物学研究。结果表明,厚颌鲂繁殖期为4～7月份,盛期为4～5月份,在繁殖季节可借第二性征辨别性别。繁殖群体主要由2、3龄个体组成,总性比♀∶♂=1∶1.83。厚颌鲂2龄初次性成熟(♀∶75%;♂∶94.7%),3龄个体全部成熟。最小性成熟雌性全长189.0mm,体长158.0mm,体重72.1g,成熟系数2.7%;雄性全长179.0mm,体长149.0mm,体重57.1g,成熟系数2.2%。厚颌鲂绝对怀卵量为(59587.22±59018)粒,相对怀卵

建鲤与异育银鲫生长、生化组成和饲料利用的比较

淡水生态与生物技术国家重点实验室开放课题(9808E4和2002FB12)

Cloning and characterization of the gene for UDPGlc dehydrogenase from the cyanobacterium, Microcystis aeruginosa FACHB 905

Using degenerate primers based on conserved regions of the UDP-glucose dehydrogenase (UDPGDH) gene, an initial 476-bp DNA fragment was amplified from the water-bloom forming cyanobacterium, Microcystis aeruginosa FACHB 905. TAIL-PCR and ligation-mediated PCR were used to amplify the flanking regions to isolate an about 2.5-kb genomic DNA fragment. Sequence analysis revealed an ORF encoding a putative 462 amino acid protein, designated Mud for Microcystis UDPGDH. The Mud amino acid sequence is closely related to UDPGDH sequences from cyanobacterium Synechocystis PCC6803 (73% identity, 81% similarity), and bacterium Bacillus subtilis (51% identity and 67% similarity). The cloned mud gene was expressed in Escherichia coli using the pGEX-4T-1 fusion expression vector system to generate a GST-Mud fusion protein that exhibited UDPGDH activity. The cytosolic fraction of M aeruginosa FACHB 905 was subjected to Western analysis with an anti-Mud antibody, which revealed a single band of approximately 49 kD, consistent with the deduced molecular mass of the enzyme. The Mud protein could thus be characterized as a UDP-glucose dehydrogenase, which was a key enzyme for polysaccharide synthesis and has, for the first time, been studied in algae.

Influence of growth temperature on structural and magnetic characterization of (In, Cr)As quantum dots

(In, Cr)As ferromagnetic semiconductor quantum dots (QDs) were grown by molecular beam epitaxy on GaAs (001) substrates. The growth temperature effects on structure and magnetism of the QDs were investigated systematically. The Cr(2+)3d(4) states and quantum confined effect are assumed to play an important role in the room-temperature ferromagnetism of (In, Cr)As QDs. (C) 2009 Elsevier B.V. All rights reserved.

Site controlling of InAs quantum wires on cleaved edges of AlGaAs/GaAs superlattices

Site-controlled InAs quantum wires were fabricated on cleaved edges of AlGaAs/GaAs superlattices (SLs) by solid source molecular beam epitaxy. The cleaved edge of AlGaAs/GaAs SLs acted as a nanopattern for selective overgrowth after selective etching. By just growing 2.0 ML InAs without high temperature degassing, site-controlled InAs quantum wires were fabricated on the cleaved edge. Furthermore, atomic force microscopy demonstrates the diffusion of In atoms is strong toward the [00 (1) over bar] direction on the (110) surface.

Organic light emitting diodes with an organic acceptor/donor interface involved in hole injection

Organic light emitting diodes with an interface of organic acceptor 3-, 4-, 9-, 10-perylenetetracarboxylic dianhydride (PTCDA) and donor copper phthalocyanine (CuPc) involved in hole injection are fabricated. As compared to the conventional device using a 5 nm CuPc hole injection layer, the device using an interface of 10 nm PTCDA and 5 rim CuPc layers shows much lower operating voltage with an increase of about 46% in the maximum power efficiency. The enhanced device performance is attributed to the efficient hole generation at the PTCDA/CuPc interface. This study provides a new way of designing hole injection.

蓝宝石衬底上单晶InAlGaN外延膜的RF-MBE生长

利用射频等离子体辅助分子束外延技术在蓝宝石衬底上外延了晶体质量较好的单晶InAlGaN薄膜．在生长InAlGaN外延层时，获得了外延膜的二维生长，卢瑟福背散射测量结果表明，InAlGaN外延层中In，Al和Ga的组分分别为2％，22％和76％，并且元素的深度分布比较均匀，InAlGaN（0002）三晶X射线衍射摇摆曲线的半高宽为4．8′，通过原子力显微镜观察外延膜表面存在小山丘状的突起和一些小坑，测量得到外延膜表面的均方根粗糙度为2．2nm．利用光电导谱测量InAlGaN的带隙为3．76eV．