Blue green emission from a Cu+-Doped transparent material prepared by sintering porous glass

A colorless transparent, blue green emission material was fabricated by sintering porous glass impregnated with copper ions. The emission spectral profile obtained from Cu+ -doped high silica glass (HSG) by 267-mn monochromatic light excitation matches that obtained by pumping with an 800-nm femtosecond laser, indicating that the emissions in both cases come from an identical origin. The upconversion emission excited by 800-nm femtosecond laser is considered to be a three-photon excitation process. A tentative scheme of upconverted emission from Cu+ -doped HSG was also proposed. The glass materials presented herein are expected to find application in lamps, high density optical storage, and three-dimensional color displays.

Effect of as interstitial diffusionon on the properties of undoped semi-insulating LECGaAs

Annealing was carried out at 950 and 1120 degreesC under various As pressure for undoped (ND) semi-insulating (SI) LECGaAs. The effects of annealing on native defects and electrical properties were investigated. Experimental results indicate that, after an annealing at 950 degreesC for 14 h under low As pressure, the Hall mobility decreases and the resistivity increases dramatically for the samples. These changes in electrical properties are due to the generation of intrinsic acceptor defects, and the generation of the intrinsic acceptor defects originates from the outdiffusion of As interstitial at high temperature. The generation of the intrinsic defects and these changes in electrical properties can be suppressed by increasing the applied As pressure during annealing. The concentration of the main donor defect E12 (AsGaVGa) can be decreased by about one order of magnitude by an evacuated annealing at 1120 degreesC for 2-8 h followed by a fast cooling. The decrease in E12 concentration can also be suppressed by increasing the As pressure during annealing.