Au(111)自组装膜表面原子力显微镜纳米刻蚀

在Au(111)硫醇自组装膜上通过原子力显微镜（AFM）纳米刻蚀加工了各种功能化纳米结构。本论文取得的主要成果如下： 1. “蘸笔”技术移除自组装膜及金基底 以烯丙基溴为墨水，用蘸笔技术在16－巯基十六羧酸（MHA）修饰的Au(111)基底上可以实现对金基底的直接加工，形成阴刻图案；并提出了详细的加工机理。 2. Au(111)自组膜表面的可逆加工 （1）利用乙醇修饰的导电AFM针尖通过电致刻蚀在Au(111)基底的烷基硫醇自组装膜上实现了阴阳刻图案的可逆加工。X射线光电子能谱分析表明阳刻图案的化学组成为氧化金，且此氧化金可被乙醇还原生成金得到阴刻图案。此阴刻图案可用作纳米模板，我们利用此模板加工了氧化铁磁性纳米结构和溶菌酶蛋白质纳米结构。 （2）用修饰硫醇的导电AFM针尖在Au(111)基底上实现了硫醇的可逆书写。 3. Au(111)自组膜表面官能团转化 用硫醇自组装膜修饰的Pt针在Au(111)基底的烷基硫醇自组装膜上实现了表面端基官能团转化。所得亲水性纳米图案可用作物理（如直接吸附纳米粒子）和化学纳米模板（如诱导硅烷自组装）。加工过程中基底自组装膜保持完整，未破坏Au-S键。 4. AFM研究适配子与血小板衍生生长因子－BB的相互作用 利用AFM电致刻蚀在HS-(CH2)12-(OCH2CH2)4-OH（EG4）/Au(111)上选择性移除EG4，在新暴露的金基底上生长血小板衍生生长因子－BB（PDGF-BB）适配子与EG4的混合自组装膜，通过PDGF-BB适配子与 PDGF-BB的特异性键合固定PDGF-BB，得到PDGF-BB的纳米图案。

镧系金属有机配合物Gd(2,4-C_7H_(11))_3的晶体和分子结构

2,4-二甲基戊二烯基的金属配合物在一些性质上可与相应的环戊二烯配合物相比拟。已报道了许多d过渡金属以及碱金属钾的配合物的晶体结构。对于镧系金属,仅Ernst等得到了2,4-二甲基戊二烯钕的配合物并测定了晶体结构,其晶格中含有无序的乙醚溶剂分子。本文报道了不含溶剂分子的Gd(2,4-C_7H_(11))_3,配合物在低温下的晶体结构。

Nutrient dynamics and the eutrophication of shallow lakes Kasumigaura (Japan), Donghu (PR China), and Okeechobee (USA)

We compared the nutrient dynamics of three lakes that have been heavily influenced by point and non-point source pollution and other human activities. The lakes, located in Japan (Lake Kasumigaura), People's Republic of China (Lake Donghu), and the USA (Lake Okeechobee), all are relatively large(>30 km(2)), very shallow (<4 m mean depth), and eutrophic. In all three lakes we found strong interactions among the sediments, water column, and human activities. Important processes affecting nutrient dynamics included nitrogen fixation, light limitation due to resuspended sediments, and intense grazing on algae by cultured fish. As a result of these complex interactions, simple empirical models developed to predict in-lake responses of total phosphorus and algal biomass to external nutrient loads must be used with caution. While published models may provide 'good' results, in terms of model output matching actual data, this may not be due to accurate representation of lake processes in the models. The variable nutrient dynamics that we observed among the three study lakes appears to be typical for shallow lake systems. This indicates that a greater reliance on lake-specific research may be required for effective management, and a lesser role of inter-lake generalization than is possible for deeper, dimictic lake systems. Furthermore, accurate predictions of management impacts in shallow eutrophic lakes may require the use of relatively complex deterministic modeling tools. (C) 2000 Elsevier Science Ltd. All rights reserved.

纳米功能界面的电化学和扫描探针显微镜（SPM）研究

本文简要评述了扫描探针显微学研究的发展过程、目前状况及发展方向，着重介绍了扫描探针显微学(SPM)在分子组装体研究中的一些应用。采用扫描探针显微学结合电化学的方法对自组装膜(SAMs)、纳米颗粒(nanoparticles)、有机无机纳米复合材料(composite material)体系进行了研究，并结合XPS、SEC等多种手段对分子组装体在电极表面的形态和结构进行了探讨。主要结果如下：1．STM研究金属纳米颗粒的隧道成像机理利用柠檬酸三钠还原高氯酸金的反应制备了金的溶胶纳米粒子。将对氨基硫酚自组于金单晶面(Au(111))上形成致密有序的单层；并以此为基底进一步将金溶胶纳米粒子组装于自组膜表面，得到固定化纳米粒子的次单层。用扫描隧道显微镜进行了表征，对金溶胶纳米粒子隧道成像的微观机理作了探讨，提出双势垒隧穿的电子传输界面模型。对扫描隧道显微镜下金溶胶纳米粒子的图像失真作解释。2．共轭有机小分子的导电性的研究利用保护和去保护的方法对带巯基的共轭有机小分子进行了合理地操纵，使其稳定性在我们构筑电化学界面的过程中得到了保证。我们用自组装(SAM)技术将这种共轭有机小分子首先吸附于金电表面，然后用稀氨水将其水解得到致密的共轭有机小分子的单层。在金/SAM二次基底的基础上利用巯基于金的强烈的化学键合力用电化学沉积的方法和湿化学还原的方法得到的金纳米粒子组装于电极表面，得到了金/有机分子层/金的夹心结构，并对构筑这种夹心结构的每一步骤用扫描探针显微镜(SPM)和电化学循环伏安法(CV)进行了表征，实验结果表明，此种共轭有机小分子利用巯基化学键合金属金时，电子能够快速通过这种夹心结构，为分子电子学中之基本问题“分子导线”连接纳米级的分子器件时电子能否在其间传导给出了直接的电化学证明。3．纳米复合材料的合成与表征我们用相转移方法合成了表面功能化的纳米粒子。首先，根据将HAuCl_4溶解于水相中，将Bu_4NClO_4作为相转移试剂、带巯基的有机小分子作为表面修饰剂，NaBH_4和柠檬蒜三钠作为还原剂溶解于硝基苯有机相中。将两相剧烈混合，在混合过程中HAuCl_4在水/硝基苯界面处被有机相中的还原剂还原成金属纳米粒子，刚生成的纳米粒子由于强烈的金硫键合作用而被带巯基的有机小分子表面功能化，而且能在有机溶剂中稳定存在。于是得到的表面功能化的纳米粒子在有机溶剂中的稳定胶体溶液。我们合成了表面被12烷基硫醇和巯基噻酚修饰的金纳米粒子。基于这些表面功能化且带有电化学反应性功能基团的纳米粒子，我们在电化学合成聚噻酚的系统中加入这种具有表面反应性的纳米粒子得到了有机/无机纳米复合材料。对这种复合材料我们用扫描探针显微镜(SPM)、电化学交流阻抗谱(ElS)、X-射线光电子能谱(XPS)进行了表征，结果表面纳米粒子能稳定存在于聚合物基体中，而且这种复合材料的电子传输性能远远大于同等条件下的聚合物膜。

Structural characterization, stability and electrical properties of strontium niobate ceramic

The double perovskite oxide Sr2CrNbO6 has a cubic structure according to powder X-ray diffraction. After reducing in CO, Sr2CrNbO6 still exhibited a cubic structure refined by Rietveld technique. The TG analysis indicated that Sr2CrNbO6 loses 0.127 oxygen per formula unit from 400 to 700 degrees C in H-2. The morphology and compositions of this ceramic did not significantly change on reduction

Effects of bridge ions, DNA species, and developing temperature on flat-lying DNA monolayers

Recently, we have successfully constructed flat-lying DNA monolayers on a mica surface (J. Phys. Chem. B 2006, 110, 10792-10798). In this work, the effects of various factors including bridge ions, DNA species, and developing temperature on the configuration of DNA monolayers have been investigated by atomic force microscopy (AFM) in detail. AFM results show that the species of bridge ions and developing temperature play a crucial role during the formation process. For example, the divalent cation Zn2+ resulted in many DNA chains stuck side by side in the monolayers due to the strong interactions between it and DNA's bases or the mica surface. Most DNA chain's conglutinations disappeared when the developing temperature was higher than 40 degrees C. Cd2+ and Ca2+ produced more compact DNA monolayers with some obvious aggregations, especially for the DNA monolayers constructed by using Ca2+ as the bridge ion. Co2+ produced well-ordered, flat-lying DNA monolayers similar to that of Mg2+. Furthermore, it was found that the flat-lying DNA monolayers could still form on a mica surface when plasmid DNA pBR 322 and linear DNA pBR 322/Pst I were used as the DNA source. Whereas, it was hard to form DNA monolayers on a (3-aminopropyl)triethoxysilane-mica surface because the strong interactions between DNA and substrate prevented the lateral movement of DNA molecules.

INFLUENCE OF THE SUBSTITUTION OF Y BY IN ON THE STRUCTURE AND MAGNETIC PROPERTY OF Y2CU2O5

In2CuO5 is isostructural to Y2Cu2O5 both in its crystal and magnetic structure. In and Y can be substituted by each other in any ratio to make new compounds Y2-xInxCu2O5 (x = 0-2) which were identified by XRD and IR spectrum. The structural change in Y2-x

Fingerprinting quality control of Qianghuo by high-performance liquid chromatography-photodiode array detection

A novel, simple and accurate fingerprint method was developed using high-performance liquid chromatography-photodiode array detection (HPLC-DAD) for the quality control of Qianghuo, a Tibetan folk and Chinese herbal medicine used as a diaphoretic, an antifebrile and an anodyne. For the first time, the feasibility and advantages of employing chromatographic fingerprint were investigated and demonstrated for the evaluation of Qianghuo by systematically comparing chromatograms of aqueous extracts with the professional analytical software recommended by State Food and Drug Administration (SFDA). Our results revealed that the chromatographic fingerprint combing similarity evaluation could efficiently identify and distinguish raw herbs of Qianghno from different sources and different species. The effects on Notopterygium forbesii Boiss (Apiaceae) chromatographic fingerprints resulted from collecting locations, harvesting time were also examined. (c) 2006 Elsevier lrelanc Ltd. All rights reserved.

岩浆－热液过渡阶段体系中不相容元素地球化学行为及其机制－以新疆阿尔泰3号伟晶岩脉研究为例

伟晶岩形成和演化中岩浆-热液过渡阶段物理化学性质、过铝质富挥发分岩浆体系岩浆液相不混溶、流体相出溶事件的相对时间尺度以及在岩浆-热液过渡阶段体系中稀土和其它微量元素地球化学行为(稀土“四重效应”机制和微量元素分异及控制因素等)是目前过铝质岩浆体系研究的焦点问题。对上述问题的研究和探讨，将有助于了解伟晶岩形成和演化的全过程，有助于了解挥发分(H_20、F、B、P)对过铝质岩浆体系物理性质以及对REE和其它微量元素地球化学行为影响，这对于理解过铝质岩浆体系成岩、成矿作用过程具有重大的理论和实际意义。本论文选择著名的新疆阿尔泰3号伟晶岩脉为研究对象，由于它具有完美的分带特征，使我们有可能通过各结构带矿物学、地球化学的研究揭示伟晶岩成因和演化过程以及讨论岩浆-热液过渡阶段体系中的稀土和微量元素地球化学行为。由于LCT型伟晶岩具有明显的分带性、矿物颗粒大小不均匀性等特点，因此利用全岩样品研究伟晶岩往往因取样没有代表性而被大多数岩石学家和地球化学家所否定。考虑到这点，本文系统采集阿尔泰3号伟晶岩脉各结构带磷灰石、电气石、碱性长石、石英矿物，部分结构带的石榴石、绿柱石、锂辉石矿物以及伟晶岩冷凝边和蚀变围岩的全岩样品，通过各结构带磷灰石矿物化学组成和~(87)Sr／~(86)Sr比值测定，电气石矿物的化学组成和硼同位素组成分析，碱性长石中磷含量的电子探针分析和碱性长石-石英矿物对的氧同位素体系研究以及蚀变围岩和冷凝边的化学组成分析，本文较为详尽系统地探讨以上所有的问题。通过本次多年的研究，我们获得了以下几点新的认识：f1) 富挥发分过铝质岩浆体系的样品存在稀土“四重效应”和Y-Ho、Zr-Hf、Nb-Ta、Sr-Eu元素对的显著分异，表明在过铝质岩浆演化过程中含氟流体相起着重要的作用；目前，稀土“四重效应”机制被认为是含水流体相与过铝质岩浆熔体相互作用的结果(Irber 1999；Bau 1997)，而不是独居石、磷钇矿、石榴石矿物等矿物的早期结晶引起的残余熔体稀土含量的异常变化。由于阿尔泰3号伟晶岩脉各带磷灰石以及与其共生的石榴石、绿柱石、碱性长石、锂辉石矿物均存存明显的稀土“四重效应”以及相同电价、相似离子半径的不相容元素间存在显著的分异，并结合最近赵振华等(1999)和Sba and Chappell(1999)报道S型花岗岩全岩和单矿物(磷灰石、独居石、长石、黄玉等)均存在稀土“四重效应”这一现象，本文研究提出，稀土“四重效应”是富挥发分过铝质岩浆体系的一个基本特征，其机制既不可能由含稀土的副矿物早期结晶引起残余熔体相中REE含量变化的结果，也不能定性地归因于流体相与熔体相相互作用过程中稀土元素在流体／熔体之间分异的结果，而很可能与伟晶岩岩浆形成之前某些过程密切相关，S型花岗岩岩浆在液相线以上存在硅酸盐熔体与高盐熔体(或卤水相)的不混溶液相分离有可能是过铝质岩浆体系产生稀土“四重效应”的主要原因。(2) 由于Sr~(2+)与Eu~(2+)具有相同的电价、相似的离子半径，根据经典的地球化学原理，它们具有相似的地球化学行为，在各种地质过程中其它们具有紧密的一致性。阿尔泰3号伟晶岩磷灰石中Sr／Eu比值具有二歧变化现象，其中I、Il、III和IV带磷灰石具有低的Sr／Eu比值(16:0～111.2)，而V、VI、VII带、核部带和IV带中的一个磷灰石则显示较大的Sr／Eu比值(主要在246．6～514:9范围，其中IV带的一个磷灰石该比值在10000以上)。对世界范围内的过铝质花岗岩统计表明，过铝质岩浆岩的全岩样品中的Sr／Eu也呈现二歧变化，由此本文提出Sr／Eu比值是指示过铝质岩浆体系中岩浆流体相出溶的有效地球化学参数，大于300的Sr／Eu比值是Eu~(2+)强烈分配进入流体相的地球化学标志。(3) 阿尔泰3号伟晶岩I、II、III带电气石矿物的硼同位素组成(δ~(11)B)分布在-41.11‰～-30.90‰之间，V、VI、VII带电气石矿物硼同位素组成(δ~(11)B)在-15.23‰～-9.20‰范围，IV带电气石硼同位素分布于-39.19～13.10‰范围，如此大的硼同位素分馏无法根据实验研究获得的熔体／流体相间的分馏系数进行合理解释。我们的研究表明岩浆成因电气石的B同位素组成与电气石化学组成具相关性，随电气石Y位上AI、Li阳离子数的增大，δ~(11)B值显示明显增大的趋势。阿尔泰3号伟晶岩最初形成的结构带中电气石的B同位素组成是目前所发现的最低值之一(-41.1l～39.01‰)，指示形成伟晶岩脉的初始岩浆可能由含非海相蒸发岩的泥质岩经变质深熔作用形成，或是伟晶岩岩浆在上侵定位过程中同化了含非海相蒸发岩地层的结果。本次研究利用电气石-白云母和电气石-四硼酸盐矿物间的同位索分馏以及熔体相-流体相间的同位索分馏，合理解释了阿尔泰3号伟晶岩脉电气石B同位素分馏过程，并首次获得伟晶岩形成、演化过程中B同位素组成演化的全程图谱。(4)伟晶岩岩浆形成和演化过程是否存在由过磷引起的液相不混溶现象未见确凿的岩石学和实验地球化学证据。阿尔泰3号伟晶岩脉糖粒状钠长石带(II带)明显由两种不同组构的岩性组成，而且该带是3号脉主要的Be矿化带，也是P、REE最重要的沉淀场所。阿尔泰3号伟晶岩脉梳状结构带和I带的碱性长石具较高P含量(平均值分别为0.42 wt％和0.22 wt％)，随着岩浆的演化进行，从III带到核部带，碱性长石中P含量逐渐增大(平均值由0.21 wt％增至0.50 wt％)，而II带碱性长石中异常低的P含量(平均值为0.08、wt％)是该带大量磷灰石矿物饱和结晶，导致残余熔体相中P极度亏损所造成的，而不是晚期出溶的岩浆热液交代形成的。根据Watson (1978)、Ryerson and Hess(1980)在液相线以上温度下实验研究获得的微量元素在不混溶的基性和酸性液相中分配特征，以及Webster et a1．(1997）对德国Ehrenfriedersdorf矿区伟晶岩石英中熔体包裹体的研究成果，我们推断在富磷岩浆体系中，在其演化的早期将出现由磷引起的液相不混溶作用，它对伟晶岩成岩和Be的成矿具有重大的影响。

Growth and fabrication of AlGaN/GaN HEMT based on Si(111) substrates by MOCVD

AlGaN/GaN high electron mobility transistor (HEMT) hetero-structures were grown on the 2-in Si (1 1 1) substrate using metal-organic chemical vapor deposition (MOCVD). Low-temperature (LT) AlN layers were inserted to relieve the tension stress during the growth of GaN epilayers. The grown AlGaN/GaN HEMT samples exhibited a maximum crack-free area of 8 mm x 5 mm, XRD GaN (0 0 0 2) full-width at half-maximum (FWHM) of 661 arcsec and surface roughness of 0.377 nm. The device with a gate length of 1.4 mu m and a gate width of 60 mu m demonstrated maximum drain current density of 304 mA/mm, transconductance of 124 mS/mm and reverse gate leakage current of 0.76 mu A/mm at the gate voltage of -10 V. (C) 2008 Published by Elsevier Ltd.

The effect of low temperature AlN interlayers on the growth of GaN epilayer on Si (111) by MOCVD

Low temperature (LT) AlN interlayers were used to effectively reduce the tension stress and micro-cracks on the surface of the GaN epilayer grown on Si (111) substrate. Optical Microscopy (OM), Atomic Force Microscopy (AFM), Surface Electron Microscopy (SEM) and X-Ray Diffraction (XRD) were employed to characterize these samples grown by metal-organic chemical vapor deposition (MOCVD). In addition, wet etching method was used to evaluate the defect of the GaN epilayer. The results demonstrate that the morphology and crystalline properties of the GaN epilayer strongly depend on the thickness, interlayer number and growth temperature of the LT AlN interlayer. With the optimized LT AlN interlayer structures, high quality GaN epilayers with a low crack density can be obtained. (C) 2008 Elsevier Ltd. All rights reserved.

Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111)

Crack-free GaN films have been achieved by inserting an Indoped low-temperature (LT) AlGaN interlayer grown on silicon by metalorganic chemical vapor deposition. The relationship between lattice constants c and a obtained by X-ray diffraction analysis shows that indium doping interlayer can reduce the stress in GaN layers. The stress in GaN decreases with increasing trimethylindium (TMIn) during interlayer growth. Moreover, for a smaller TMIn flow, the stress in GaN decreases dramatically when In acts as a surfactant to improve the crystallinity of the AlGaN interlayer, and for a larger TMIn flow, the stress will increase again. The decreased stress leads to smoother surfaces and fewer cracks for GaN layers by using an In-doped interlayer than by using an undoped interlayer. In doping has been found to enhance the lateral growth and reduce the growth rate of the c face. It can explain the strain relief and cracks reduction in GaN films. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Growth of crack-free GaN films on Si(111) substrate by using Al-rich AlN buffer layer

GaN epilayers were grown on Si(111) substrate by metalorganic chemical vapor deposition. By using the Al-rich AlN buffer which contains Al beyond stoichiometry, crack-free GaN epilayers with 1 mum thickness were obtained. Through x-ray diffraction (XRD) and secondary ion mass spectroscopy analyses, it was found that a lot of Al atoms have diffused into the under part of the GaN epilayer from the Al-rich AlN buffer, which results in the formation of an AlxGa1-xN layer at least with 300 nm thickness in the 1 mum thick GaN epilayer. The Al fraction x was estimated by XRD to be about 2.5%. X-ray photoelectron spectroscopy depth analysis was also applied to investigate the stoichiometry in the Al-rich buffer before GaN growth. It is suggested that the underlayer AlxGa1-xN originated from Al diffusion probably provides a compressive stress to the upper part of the GaN epilayer, which counterbalances a part of tensile stress in the GaN epilayer during cooling down and consequently reduces the cracks of the film effectively. The method using the Al diffusion effect to form a thick AlGaN layer is really feasible to achieve the crack-free GaN films and obtain a high crystal quality simultaneously. (C) 2004 American Institute of Physics.

Crack-free GaN/Si(111) epitaxial layers grown with InAlGaN alloy as compliant interlayer by metalorganic chemical vapor deposition

A new method is demonstrated to be effective in reducing mismatch-induced tensile stress and suppressing the formation of cracks by inserting InAlGaN interlayers during the growth of GaN upon Si (1 1 1) substrate. Compared with GaN film without quaternary interlayer, GaN layer grown on InAlGaN compliant layers shows a five times brighter integrated PL intensity and a (0 0 0 2) High-resolution X-ray diffraction (HRXRD) curve width of 18 arcmin. Its chi(min), derived from Rutherford backscattering spectrometry (RBS), is about 2.0%, which means that the crystalline quality of this layer is very good. Quaternary InAlGaN layers, which are used as buffer layers firstly, can play a compliant role to endure the large mismatch-induced stress and reduce cracks during the growth of GaN epitaxy. The mechanisms leading to crack density reduction are investigated and results show that the phase immiscibility and the weak In-N bond make interlayer to offer tenability in the lattice parameters and release the thermal stress. (c) 2005 Elsevier B.V. All rights reserved.