Low-threshold-current and high-out-power 660 nm laser diodes with a p-GaAs current blocking layer for DVD-RAM/R

We investigate a new structure of high-power 660-nm AlGaInP laser diodes. In the structure, a p-GaAs layer is grown on the ridge waveguide serving as the current-blocking layer, and nonabsorbing windows are only fabricated near the cavity facets to increase the catastrophic-optical-damage level. Stable fundamental mode operation was achieved at up to 80 mW without kinks, and the maximum output power was 184 mW at 22 degrees C. The threshold current was 40 mA.

~(179)Au的1/2[660](πi_(13/2))转动带

利用能量为 16 4— 180MeV的 3 5Cl束流 ,通过重离子核反应 14 9Sm(3 5Cl ,5n)研究了 179Au的高自旋态能级结构 .实验进行了γ射线的激发函数、X γ和γ γ t符合测量 .基于对实验测量结果的分析 ,首次建立了 179Au的 1 2 [6 6 0 ](πi13 2 )转动带 .结合已有的实验数据 ,着重讨论了奇AAu核中1 2 [6 6 0 ](πi13 2 )转动带的带头激发能随中子数的变化

Production of new superheavy Z=108-114 nuclei with U-238, Pu-244, and Cm-248,Cm-250 targets

Within the framework of the dinuclear system (DNS) model, production cross sections of new superheavy nuclei with charged numbers Z=108-114 are analyzed systematically. Possible combinations based on the actinide nuclides U-238, Pu-244, and Cm-248,Cm-250 with the optimal excitation energies and evaporation channels are pointed out to synthesize new isotopes that lie between the nuclides produced in the cold fusion reactions and the Ca-48-induced fusion reactions experimentally, which are feasible to be constructed experimentally. It is found that the production cross sections of superheavy nuclei decrease drastically with the charged numbers of compound nuclei. Larger mass asymmetries of the entrance channels enhance the cross sections in 2n-5n channels.