Theoretical model for a periodically driven semiconductor laser subject to optical feedback from a microcantilever

We propose a theoretical model for analyzing the dynamics of a periodically driven semiconductor laser subject to optical feedback from a microcantilever. We numerically investigate the temporal evolution of the light intensity of the semiconductor laser, and we show the interspikes of the light intensity. These interspikes of light intensity are also demonstrated in our experiment. The validity of the theoretical model is verified. The observed phenomenon has a potential application for resonant sensing. (C) 2008 Optical Society of America.

水稻杂种优势生理生化基础及优势预测的研究

杂种优势是一种十分复杂而又很重要的生物现象，水稻上仅我国已实现杂种优势的利用，但优势实质，包括优势的生理生化基础系统深入研究不够。该成果经5年的分工合作攻关，对水稻产量优势有关的许多重要生理生化指标进行了较深入的研究，同时在此基础上提出“匀浆互补”、ATP含量水平、细胞色素氧化酶、乙醇酸氧化酶等酶活性测定和酯酶同功酶谱类型分析，以及同位素32P和14C在水稻主要器官的分布等多种杂种产量优势预测方法，其命中率达88％以上，其中优势预测方面无论在量上与深度上都有新发展新创造，特别是杂种种子纯度测定技术的突破，解决了沿用以前方法无法测定的推广组合种子鉴定的难关，在生产上发挥了积极的作用。首次发现酯酶负极存在一个由一对显性基因控制的遗传位点和磷酸葡萄糖异构酶的2个遗传位点相结合，可以预测杂交水稻种子纯度，准确度达98％；首次应用荧光扫描新技术测定杂种种子纯度；在国际上首次提出“匀浆互补法”，使我国水稻这方面的研究整体上继续保持国际领先水平。发表论文数十篇，并从多层次着手，获得了大量有关水稻杂种优势生理生化特性新资料，使杂交水稻的基础研究和发展应用技术方面走在国内外领先地位。

A criterion for local interconvertibility between all-tripartite Gaussian states

We arrive at a necessary and sufficient criterion that can be readily used for interconvertibility between general, all-tripartite Gaussian states under local quantum operation. The derivation involves a systematic reduction that converts the original complex conditions in high-dimensional, 6n x 6n matrix space eventually into 2 x 2 matrix problems.

Large current gain and low operational voltage permeable metal-base organic transistors based on Au/Al double layer metal base

In order to realize the common-emitter characteristics of the tris(8-hydroxyquinoline) aluminium (Alq(3))-based organic transistors, we used Au/Al double metal layer as the base, thus the vertical metal-base transistors with structure of Al/n-Si/Au/Al/Alq(3)/LiF/Al were constructed. It was found that the contact properties between the base and the organic semiconductors play an important role in the device performance. The utilization of Au/Al double layer metal base allows the devices to operate at high gain in the common-emitter and common-base mode at low operational voltage.