53 resultados para 1012

em Chinese Academy of Sciences Institutional Repositories Grid Portal


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Titanium carbide reinforced nickel aluminide matrix in situ composites were produced using a newly patented laser melting furnace. Microstructure of the laser melted TiC/(Ni3Al–NiAl) in situ composites was characterized by optical microscopy (OM), scanning electron microscopy (SEM), X-ray diffraction (XRD) and transmission electron microscopy (TEM). Results showed that the constituent phases in the laser melted in situ composites are TiC, Ni3Al and NiAl. Volume fraction of TiC and NiAl increase with increasing content of titanium and carbon. The growth morphology of the reinforcing TiC carbide has typically faceted features, indicating that the lateral growth mechanism is still predominant growth mode under rapid.

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本文用导数展开法对液体薄层与亚音速气流接壤时的界面稳定性作非线性分析.文中考虑了液体的表面张力与体积力,故非线性的Rayleigh-Taylor不稳定性可作为特例而导出;液体与气体均不计粘性.虽然Nayfeh曾算过这一情况,但其三阶方程有遗漏(如213页的式(2.29)).同时解也不自洽(如其一阶解(2.31)并不满足他的初始条件(2.20)),此外,在截止波数附近,对行波他并未考虑.本文弥补了这些,并得出了新的结论.

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Electrons accelerated by a propagating laser pulse of linear or circular polarization in vacuum have been investigated by one-dimensional particle-in-cell simulations and analytical modeling. A stopping target is used to stop the laser pulse and extract the energetic electrons from the laser field. The effect of the reflected light is taken into account. The maximum electron energy depends on the laser intensity and initial electron energy. There is an optimal acceleration length for electrons to gain maximum energy where electrons meet the peak of the laser pulse. The optimal acceleration length depends strongly on the laser pulse duration and amplitude. (C) 2007 American Institute of Physics.

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研究光子晶体光纤中光纤光栅的传输谱特性对于研制基于光子晶体光纤的光纤光栅器件有着重要的意义。结合耦合模理论和光束传输相关函数方法,对一种典型光子晶体光纤中的布拉格光栅(FBG)传输谱进行了理论分析。比较了光子晶体光纤中布拉格光栅与常规布拉格光栅的传输谱。数值分析了光纤截面结构变化对于光栅传输谱的影响,并给出这种影响的定性解释。计算结果显示,与常规光纤光栅相比,包层模共振引起的损耗峰与正反向纤芯模耦合引起的损耗峰可以相比拟,而包层模共振的间隔也比常规光纤中光纤光栅的包层模共振间隔要大。同时给出了晶体光纤截面

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反射式光栅对是一种具有负色散性质的器件,可用于飞秒激光脉冲的压缩和展宽,具有无材料色散的优点。给出了一种基于多台阶反射光栅的脉冲压缩装置。该装置为倍密度光栅结构,由两个周期分别为40μm和20μm的四台阶反射式光栅组成。实验得到的衍射效率可以达到70%以上,输入脉冲经过两个光栅的衍射后会按原路返回,从而达到色散补偿的效果。利用此压缩装置,脉冲宽度为66.8 fs的输入脉冲压缩至接近傅里叶变换极限脉冲,即46.6 fs,由此证明只要多台阶光栅效率足够高,此装置就有可能成为不同于棱镜对进行飞秒脉冲腔内和腔外压缩的另一种途径。

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Yb: YAlO3 (YAP) (15 at %) and Yb: Y3Al5O12 (YAG)(15 at %) have been grown using the Czochralski method. Their absorption and fluorescence spectra were measured at room temperature and important spectroscopic parameters were calculated. Through the comparison of spectroscopic parameters of Yb:YAP and Yb: YAG, all results indicate that 15 at % Yb:YAP crystal is a potential candidate used for compact, efficient thin chip lasers when the laser output wavelength is 1012 or 103 8 nm. (C) 2004 Elsevier B.V. All rights reserved.

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三七总皂苷(Panax notoginseng saponins,PNS)是从传统中药三七的根中提取的主要有效成分,具有改善血液循环、耐缺氧、改善记忆力、抗衰老等多方面的生理活性.本研究采用"盲法"全细胞膜片钳技术观察PNS对大鼠海马CA1区锥体神经元长时程增强效应(LTP)的影响,以分析其增强学习记忆功能的神经电生理机制.以断头法分离Wistar大鼠(3~4 周)海马半脑,用切片机切出400 μm厚度的海马脑片,以全细胞电压钳制方式记录CA1区锥体细胞的兴奋性突触后电流(EPSCs),给予高频刺激HFS(100 Hz)诱导LTP,分析PNS对大鼠海马CA1区EPSCs和LTP的影响.结果表明,PNS(0.1~0.4 g·L-1)能显著抑制EPSCs(P<0.05),且对海马CA1区LTP无易化作用;但PNS(0.04~0.05 g·L-1)不影响CA1区的EPSCs基础突触传递(P>0.05),却可以增强HFS诱发的LTP(P<0.05).上述结果提示,PNS(0.04~0.05 g·L-1)能易化海马CA1区锥体神经元的长时程增强效应,该作用应是其增进学习记忆力的神经电生理机制.

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作者进行了较广泛的样品采集,通过实验分离纯化培养得到多个鞘藻目种类的株系,并采用PCR技术新获得鞘藻目2属8个种类的部分28S rDNA序列,连同GenBank中的另两条序列,分析的物种涵盖了鞘藻目中的每个属。通过比较分析绿藻纲中包括此10条序列的共36个种类的同一基因序列,并选取Trebouxiophyceae中的椭圆小球藻(Chlorella ellipsoidea)和Fusochloris perforata作外类群,运用多种方法构建分子系统树,包括邻接法(Neighbor-Joining)、最大简

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构建湿地是 2 0世纪 70年代兴起的处理污水的生态工程 ,由于其具有建造、运行和日常管理费用低廉 ,处理效果稳定 ,且适用面广 ,越来越受到世界各国的重视。这种污水处理技术在发展中国家有着十分广泛的应用前景。本文研究与揭示了复合垂直流构建湿地基质中的磷酸酶和脲酶活性及与污水净化效果的关系 :1不同类型湿地基质酶活性不同 ,甚至不同月份的酶活性也不相同。2不同深度基质中的酶活性是不相同的。 3基质磷酸酶的活性与复合垂直流构建湿地对污水中总磷 ( TP)、无机磷 ( IP)以及化学需氧量 ( CODCr)的

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Tobacco BY-2 cells were exposed to microcystin-RR (MC-RR) at two concentrations, 60 mu g mL(-1) and 120 mu g mL(-1), to study the changes in morphology and ultrastructure of cells as a result of the exposure. Exposure to the lower concentration for 5 d led to typical apoptotic morphological changes including condensation of nuclear chromatin, creation of a characteristic 'half moon' structure, and cytoplasm shrinkage and decreased cell volume, as revealed through light microscopy. fluorescence microscopy, and transmission electron microscopy, respectively. Exposure to the higher concentration, on the other hand, led to morphological and ultrastructural changes typical of necrosis, such as rupture of the plasma membrane and the nuclear membrane and a marked swelling of cells. The presence of many vacuoles containing unusual deposits points to the involvement of vacuoles in detoxifying MC-RR. Results of the present study indicate that exposure of tobacco BY-2 cells to MC-RR at a lower concentration (60 mu g mL(-1)) results in apoptosis and that to a higher concentration (120 mu g mL(-1)), in necrosis. (C) 2009 Elsevier Ltd. All rights reserved.

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Using the effective-mass Hamiltonian for an arbitrary direction wurtzite semiconductor on the basis of k.p theory, we investigate the strain effects on the transition energies and optical properties in the R-plane ([1012]-oriented plane) GaN. The results show that (1) the transition energies decrease with the biaxial strains changing from -0.5 to 0.5%; and (2) giant optical anisotropy appears in the R-plane which is significantly affected by the biaxial strains. We clarify the relation between the strains and the polarization properties. Finally, we discuss the application of these properties to the R-plane GaN based devices. (c) 2009 The Japan Society of Applied Physics

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Triple-axis x-ray diffraction (TXRD) and photoluminescence (PL) spectra are used to assess the influence of the ratio of TMIn flow to group III flow on structural defects, such as dislocations and interface roughness, and optical properties of multiple quantum wells(MQWs). In this paper the mean densities of edge and screw dislocations in InGaN/GaN MQWs are obtained by W scan of every satellite peak of (0002) symmetric and (1012) asymmetric diffractions. At the same time, the interface roughness is measured by the radio of the full width at half maximum of satellite peaks to the peak orders. The experimental results showed that the density of dislocation, especially of edge dislocation, and interface roughness increase with the increase of the ratio, which leads to the decrease of PL properties. It also can be concluded that the edge dislocation acts as nonradiative recombination centers in InGaN/GaN MQWs. Also noticed is that the variation of the ratio has more influence on edge dislocation than on screw dislocation.

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Self-assembled InAs quantum dots (QDs) with differing deposition thicknesses covered by InxAl1-xAs (x = 0.2, 0.3) and In0.2Ga0.8As combination strain-reducing layers (CSRLs) were grown by molecular beam epitaxy. Their structural and optical properties were investigated by atomic force microscopy and photoluminescence spectroscopy, respectively. The emission peak position of InAs QDs capped by CSRL can reach 1.34 mum at room temperature with a relatively larger energy splitting of 93 meV between the ground and first excited states.