1.55-mu m resonant cavity enhanced photodiode based on MBE grown Ge quantum dots

Self-assembly Ge quantum dots (QD) on Si and Si/Ge mutli-quantum-wells (MQW) are grown by MBE. The island size and island density was investigated by atomics force microscopy. Ten-layer and twenty-layer MQW were selected for photodiode device fabrication. In photoluminescence (PL), a broad peak around 1.55-mu m wavelength was observed with higher peak intensity for the 10-layer MQW which had less defects than the 20-layer sample. Resonant cavity enhanced (RCE) photodiodes were fabricated by bonding on a SOI wafer. Selected responsivity at 1.55 mu m was successfully demonstrated. (c) 2005 Elsevier B.V. All rights reserved.

1-苯基-3-甲基-4-苯甲酰基-5-吡唑啉酮和磷酸三丁脂协同萃取镭的研究

用1-苯基-3-甲基-4-苯甲酰基-5-吡唑啉酮(PMBP)为萃取剂,苯为稀释剂,从pH5的水相中萃取船224Ra,发现224Ra的萃取效率非常低。若往PMBP中加入少量的磷酸三丁脂(TBP),则会极大地提高镭的萃取效率,这说明TBP对PMBP萃取镭有显著的协同萃取效应。完成了萃取时间和反萃时间对224Ra萃取效率的影响以及224Ra萃取效率与TBP量之间的依赖关系等条件实验。