19 resultados para 04021700 CTD-39

em Chinese Academy of Sciences Institutional Repositories Grid Portal


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The origin of new structures and functions is an important process in evolution. In the past decades, we have obtained some preliminary knowledge of the origin and evolution of new genes. However, as the basic unit of genes, the origin and evolution of exons remain unclear. Because young exons retain the footprints of origination, they can be good materials for studying origin and evolution of new exons. In this paper, we report two young exons in a zinc finger protein gene of rodents. Since they are unique sequences in mouse and rat genome and no homologous sequences were found in the orthologous genes of human and pig, the young exons might originate after the divergence of primates and rodents through exonization of intronic sequences. Strong positive selection was detected in the new exons between mouse and rat, suggesting that these exons have undergone significant functional divergence after the separation of the two species. On the other hand, population genetics data of mouse demonstrate that the new exons have been subject to functional constraint, indicating an important function of the new exons in mouse. Functional analyses suggest that these new exons encode a nuclear localization signal peptide, which may mediate new ways of nuclear protein transport. To our knowledge, this is the first example of the origin and evolution of young exons.

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AlGaN/AlN/GaN high electron mobility transistor (HEMT) structures with high mobility GaN channel layer were grown on 50 min diameter semi-insulating (SI) 6H-SiC substrates by metalorganic chemical vapor deposition and large periphery HEMT devices were fabricated and characterized. High two-dimensional electron gas mobility of 2215 cm(2)/V s at room temperature with sheet electron concentration of 1.044 x 10(13)/cm(2) was achieved. The 50 mm diameter HEMT wafer exhibited a low average sheet resistance of 251.0 Omega/square, with the resistance uniformity of 2.02%. Atomic force microscopy measurements revealed a smooth AlGaN surface with a root-mean-square roughness of 0.27 nm for a scan area of 5 mu mi x 5 pm. The 1-mm gate width devices fabricated using the materials demonstrated a very high continuous wave output power of 9.39 W at 8 GHz, with a power added efficiency of 46.2% and power gain of 7.54 dB. A maximum drain current density of 1300 mA/mm, an extrinsic transconductance of 382 mS/mm, a current gain cutoff frequency of 31 GHz and a maximum frequency of oscillation 60 GHz were also achieved in the same devices. (C) 2007 Elsevier Ltd. All rights reserved.

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一 结构因子相角的代数解法晶体结构研究中的相角问题,一直是晶体学工作者努力探求的基本问题。几十年来,关于相角问题的研究已经取得了巨大的进展,直接法的成熟和普遍应用就是这个进展的显著标志。在直接法相角问题研究中,历来存在两种基本方法,即概率法和代数法。当前直接法的迅猛发展,则主要以概率法为基础,其应用的基本公式即是来自∑关系中的∑_2关系和由此发展出的TANGENT公式,并结合一系列的基本理论和辅助公式,从而使直接法的发展一直呈方兴未艾之势。与此形成鲜明对照的是,相角问题的代数法研究则有日趋下降之势,尤其近十年来则显著落后了。作者从近年来的∑关系研究中,看到要解决相角问题,代数法仍然有其潜在的应作价值,并认为在概率法可以得到应用的许多方面,在代数法那里都应找到对应的类似内容,而代数法在研究和应用中所表现出的不同于概率法的那些方面也正是在相角问题研究中最令人感兴趣的问题,这就是我们进行代数法研究的目的和出发点。(一)1.5和2.5阶代数式的提出及对±2~(II)型相角的估算。(二)一般类型相角的估算(三)结构相角通用代数式的推导。代数法不仅可用于结构半不变量O,π型相角的计算,而且可用于非结构半不变量的种种类型相角的估算,其中包括型和一般类型相角,而且其应用效果完全可以和概率法相比拟,在机时利用上前者有一定优势。通用代数式的获得将为代数法的普遍应用和计算机计算创造了方便条件。二稀土杂多酸根配合物K_8H_5[La(SiWMo_(10)O_(39))(SiW_3Mo_8O_(39))]·nH_2O的晶体结构采用低温技术,在-90 ℃的干燥氮气保护下,收集晶体衍射数据,以直接法解出结构。a = 17.485(5), b = 27.096(6), c = 21.642(5)A, β = 107.79(2)°, z = 4。最后的R值为0.097。中心离子La(III)同两个杂多酸根提供的8 个氧配合。而其中的W、Mo同氧的配位情况基本相同,者是与氧六配位,形成变形配位八面体。

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The total cross-section for the dd → 4HeK+K− reaction has been measured at a beam momentum of 3.7GeV/c, corresponding to an excess energy of 39MeV, which is the maximum possible atthe Cooler Synchrotron COSY-Jülich. A deuterium cluster-jet target and the ANKE forward magnetic spectrometer, placed inside the storage ring, have been employed in this investigation. We find a total cross-section of σtot < 14 pb, which brings into question the viability of investigating the dd → 4He a0(980)reaction as a means of studying isospin violation.

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根据重离子在CR39中能量损失率公式,建立了一个鉴别空间重离子的数学模型LET=cZdRb.通过传能线密度与剩余射程之间的关系曲线,获得了该模型的系数.在实验中发现的CR39蚀刻率与离子有限传能线密度的关系VT=A·(REL)BE<350,被用来与该数学模型相关联,并得到一等式R=A0.0455Z3.18V-1T.最终,借助于标定实验得到了离子鉴别公式Z3.18=64541.08+2.53(dR/dV-1T).

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Through layer-by-layer assembly, a series of undecatungstozincates monosubstituted by first-row transition metals, ZnW11M(H2O)O-39(n-) (M=Cr, Mn, Fe, Co, Ni, Cu. or Zn) were first successfully immobilized on a 4-aminobenzoic acid modified glassy carbon electrode surface. The electrochemical behaviors of these polyoxometalates were investigated. They exhibit some special properties in the films different from those in homogeneous aqueous solution. The Cu-centered reaction mechanism in the ZnW11Cu multilayer film was described. The electrocatalytic behaviors of these multilayer film electrodes to the reduction of H2O2 and BrO3- were comparatively studied.

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报道双-Keggin型四元杂多化合物K10H3[Nd(SiMo7W4O39)2]XH2O(简称[Nd(SiMo7W4)2]13-)聚合物的交替组装多层膜在4-氨基苯甲酸修饰玻碳电极上的制备及其电化学特性。各层的循环伏安行为证明膜的均匀增长,峰电流随层数的增加而增加。与溶液中的电化学行为相比,位于多层膜中的杂多化合物的氧化还原特征峰随着多层膜层数的增加,具有一定程度的形变。该电极具有较高的稳定性。并讨论了pH对其氧化还原行为的影响,考察了该多层膜修饰电极对BrO3-、HNO2和H2O2等的电催化性能。

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Firstly reported for Fe-containing transition metal substituted polyoxometalates was an unusual Fe-centered demetalation process induced by the reduction of ZnW11FeIII to ZnW11FeII which resulted in a new couple of Fe-relating redox waves at positive potentials. (C) 1999 Elsevier Science S.A. All rights reserved.

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The electrochemical behavior of a series of undecatungstozincates monosubstituted by first-row transition metals, ZnW11M(H2O)O-39(n-) (M=Cr, Mn, Fe, Co, Ni, Cu or Zn), was investigated systematically and comparably in aqueous solutions by electrochemical and in situ UV-visible-near-IR spectroelectrochemical methods. These compounds exhibit not only successive reduction processes of the addenda atoms (W) in a negative potential range, but some of them also involve redox reactions originating from the substituted transition metals (M) such as the reduction of Fe-III and Cu-II at less negative potentials and the oxidation of Mn-II at a more positive potential. Some interesting results and phenomena, especially of the transition metals, were found for the first time. Moreover, possible reaction mechanisms are proposed based on the experimental results.

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采用电解法制备了未见文献报道的杂多蓝H8[SiMo11Co(H2O)O39]·20H2O,通过X-射线衍射测定了其晶体结构,该晶体属单斜晶系,空间群P21;。晶胞参数全矩阵最小二乘法修正至中心原子Si与4个氧形成四面体结构,配原子M(M=11/12Mo+1/12Co)与O形成12个MO6八面体结构3个MO6共边形成4个M3O13三金属簇,4个三金属簇与SiO4四面体共角相连形成阴离子结构。

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采用水热合成与离子交换方法,将中心原子为过渡金属(Fe)的钨系过渡金属取代型杂多阴离子FeW_(11)NiO_(39)(H_2O) ̄(7-)(缩写为FeW_(11)Ni)嵌入ZnAl型阴离子层状结构粘土间,获得了大层间距、通道高度达1.32nm的新型层柱微孔化合物。通过XRD、IR及ESR等手段进行了表征。以ZnAl-Few_(11)Ni为催化剂合成邻苯二甲酸二辛酯(DOP),选择性大于99%,转化率由嵌入前的12%提高到近50%,催化活性明显提高。