44 resultados para . neutron radiation field

em Chinese Academy of Sciences Institutional Repositories Grid Portal


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Radiation-induced electrical changes in both space charge region (SCR) of Si detectors and bulk material (BM) have been studied for samples of diodes and resistors made on Si materials with different initial resistivities. The space charge sign inversion fluence (Phi(inv)) has been found to increase linearly with the initial doping concentration (the reciprocal of the resistivity), which gives improved radiation hardness to Si detectors fabricated from low resistivity material. The resistivity of the BM, on the other hand, has been observed to increase with the neutron fluence and approach a saturation value in the order of hundreds k Omega cm at high fluences, independent of the initial resistivity and material type. However, the fluence (Phi(s)), at which the resistivity saturation starts, increases with the initial doping concentrations and the value of Phi(s) is in the same order of that of Phi(inv) for all resistivity samples. Improved radiation hardness can also be achieved by the manipulation of the space charge concentration (N-eff) in SCR, by selective filling and/or freezing at cryogenic temperatures the charge state of radiation-induced traps, to values that will give a much smaller full depletion voltage. Models have been proposed to explain the experimental data.

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Radiation-induced electrical changes in both space charge region (SCR) of Si detectors and bulk material (BM) have been studied for samples of diodes and resistors made on Si materials with different initial resistivities. The space charge sign inversion fluence (Phi(inv)) has been found to increase linearly with the initial doping concentration (the reciprocal of the resistivity), which gives improved radiation hardness to Si detectors fabricated from low resistivity material. The resistivity of the BM, on the other hand, has been observed to increase with the neutron fluence and approach a saturation value in the order of hundreds k Omega cm at high fluences, independent of the initial resistivity and material type. However, the fluence (Phi(s)), at which the resistivity saturation starts, increases with the initial doping concentrations and the value of Phi(s) is in the same order of that of Phi(inv) for all resistivity samples. Improved radiation hardness can also be achieved by the manipulation of the space charge concentration (N-eff) in SCR, by selective filling and/or freezing at cryogenic temperatures the charge state of radiation-induced traps, to values that will give a much smaller full depletion voltage. Models have been proposed to explain the experimental data.

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In this work, the neutron radiation field at Heavy Ion Research Facility in Lanzhou (HIRFL) was investigated. Total neutron yields, spectra and angular distributions in the bombardment of various thick targets by C-12 and O-18 ions with energies up to 75 MeV/u were obtained using the activation method. The neutron dose equivalent rates of 60 MeV/u O-18 on various thick targets at different angles were measured with a modified A-B remmeter. Our results are compared with those of other reports.

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Neutron induced defect levels in high resistivity silicon detectors have been studied using a current-based macroscopic defect analysis system: thermally stimulated current (TSC) and current deep level transient spectroscopy (I-DLTS). These studies have been correlated to the traditional C-V, I-V, and transient current and charge techniques (TCT/TChT) after neutron radiation and subsequent thermal anneals. It has been found that the increases of the space charge density, N-eff, in irradiated detectors after thermal anneals (N-eff reverse anneal) correspond to the increases of deep levels in the silicon bandgap. In particular, increases of the double vacancy center (V-V and V-V-- -) and/or C-i-O-i level have good correlations with the N-eff reverse anneal. It has also been observed that the leakage current of highly irradiated (Phi(n) > 10(13) n/cm(2)) detectors increases after thermal anneals, which is different from the leakage current annealing behavior of slightly irradiated (Phi(n) < 10(13) n/cm(2)) detectors. It is apparent that V-V center and/or C-i-O-i level play important roles in both N-eff and leakage current degradations for highly irradiated high resistivity silicon detectors.

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nyYAlO3CeYAPCe15ACeF3NaIYAPCe125MeVCeF3NaI402mmYAPCeCeF2NaI1644

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Current based microscopic defect analysis methods such as current deep level transient spectroscopy (I-DLTS) and thermally stimulated current (TSC) have been further developed in accordance with the need for the defect analysis of highly irradiated (Phi(n) > 10(13) n/cm(2)) high resistivity silicon detectors. The new I-DLTS/TSC system has a temperature range of 8 K less than or equal to T less than or equal to 450 K and a high sensitivity that can detect a defect concentration of less than 10(10)/cm(3) (background noise as low as 10 fA). A new filling method using different wavelength laser illumination has been applied, which is more efficient and suitable than the traditional voltage pulse filling. It has been found that the filling of a defect level depends on such factors as the total concentration of free carriers generated or injected, the penetration length of the laser (laser wavelength), the temperature at which the filling is taking place, as well as the decay time after the filling (but before the measurement). The mechanism of the defect filling can be explained by the competition between trapping and detrapping of defect levels, possible capture cross section temperature dependence, and interaction among various defect levels in terms of charge transferring. Optimum defect filling conditions have been suggested for highly irradiated high resistivity silicon detectors.

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HIRFL-CSR100600900MeV/u~(12)CCu800MeV/uSi400MeV/uArCuQMD

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An electron with an appropriate initial velocity injected into an oncoming, ultraintense circularly polarized laser pulse can execute a circular relativistic motion at the peak of the laser pulse. The circulating electron then radiates in the same manner as that in the storage ring of a conventional synchrotron source. Owing to the extremely small orbit radius, the laser-field synchrotron radiation thus generated can be a compact source of radiation pulses at short wavelength and short duration.

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We investigate the effect of the calar-isovector delta-meson field on the equation of state (EOS) and composition of hyperonic neutron star matter, and the properties of hyperonic neutron stars within the frame work of the relativistic mean field theory. The influence of the delta-field turns out to be quite different and generally weaker for hyperonic neutron star matter as compared to that for npe mu neutron star matter. We find that inclusion of the delta-field enhances the strangeness content slightly and consequently moderately softens the EOS of neutron star matter in its hyperonic phase. As for the composition of hyperonic star matter, the effect of the delta-field is shown to shift the onset of the negatively-charged (positively-charged) hyperons to slightly lower (higher) densities and to enhance (reduce) their abundances. The influence of the delta-field on the maximum mass of hyperonic neutron stars is found to be fairly weak, where as inclusion of the delta-field turns out to enhance sizably both the radii and the moments of inertia of neutron stars with given masses. It is also shown that the effects of the delta-field on the properties of hyperonic neutron stars remain similar in the case of switching off the Sigma hyperons.

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For radiation protection purposes, the neutron dose in carbon ion radiation therapy at the HIRFL (Heavy Ion Research Facility in Lanzhou) was investigated. The neutron dose from primary C-12 ions with a specific energy of 100 MeV/u delivered from SSC was roughly measured with a standard Anderson-Broun rem-meter using a polyethylene target at various distances. The result shows that a maximum neutron dose contribution of 19 mSv in a typically surface tumor treatment was obtained, which is less than 1% of the planed heavy ion dose and is in reasonable agreement with other reports. Also the gamma-ray dose was measured in this experiment using a thermo luminescent detector.

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High temperature chemical non-equilibrium phenomena have a great effect on the flow field around a reentry vehicle. A set of three dimensional Navier-Stokes equations have been solved by implicit finite volume NND scheme. Both ideal gas viscous flow and chemical non-equilibrium flow are calculated for a spherical-cone at a small angle of attack. The results of the two flows have been compared and the effect of chemical non-equilibrium has been analyzed. The effect of wall material's properties, such as catalysis and radiation were studied. The results are in good agreement with the referenced paper.

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The effects of the free-stream thermo-chemical state on the test model flow field in the high-enthalpy tunnel are studied numerically. The properties of the free-stream, which is in thermo-chemical non-equilibrium, are determined by calculating the nozzle flow field. A free-stream with total enthalpy equal to the real one in the tunnel while in thermo-chemical equilibrium is constructed artificially to simulate the natural atmosphere condition. The flow fields over the test models (blunt cone and Apollo command capsule model) under both the non-equilibrium and the virtual equilibrium free-stream conditions are calculated. By comparing the properties including pressure, temperature, species concentration and radiation distributions of these two types of flow fields, the effects of the non-equilibrium state of the free-stream in the high-enthalpy shock tunnel are analyzed.

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Theoretical analyses of x-ray diffraction phase contrast imaging and near field phase retrieval method are presented. A new variant of the near field intensity distribution is derived with the optimal phase imaging distance and spatial frequency of object taken into account. Numerical examples of phase retrieval using simulated data are also given. On the above basis, the influence of detecting distance and polychroism of radiation on the phase contrast image and the retrieved phase distribution are discussed. The present results should be useful in the practical application of in-line phase contrast imaging.