离散正交法(DOM)离散点的正交分析与程序设计

对能够求解一系列线性常微分方程组边值问题的数值计算方法--离散正交法(DOM)进行了离散点的正交分析,给出了计算机实现数值计算的程序设计原理与计算流程图,指出了该方法能够克服传统计算方法由于所求函数的快速增长所引起的边界效应和局部效应的缺点,给出了得到稳定计算过程的可能性.为了推广应用,文中介绍了离散正交法的基本原理、实现方法和求解过程,讨论了采用离散正交法来求解非线性问题的处理方法.并且以承受均布载荷的环形板为例,将采用离散正交法的计算结果与经典解作了对比.

负载咖啡因-活性炭新吸附材料对钼(VI)的吸附行为的研究

以生物碱（咖啡因）为衍生化试剂，用浸渍法使其负载于活性炭（ＡＣ）上，制成一种新的金属阴离子吸附材料———负载咖啡因－活性炭（ＣＡＣ）。用ＩＣＰ－ＡＥＳ研究了该吸附材料对金属阴离子［Ｍｏ７Ｏ２４］６－的吸附性能；考察了其化学稳定性；还研究了不同浓度硫酸和氨水对待测物吸附率和解脱率的影响及共存离子的干扰影响。

Simultaneous determination of chromium(VI) and chromium(III) of bioavailable fraction in bottom mud by flow injection-atomic absorption spectroscopy

A rapid and sensitive method for separation and determination of Cr(VI) and Cr(III) in bottom mud of lake by flow injection on-line preconcentrtion system and GFAAS was developed. The available Cr(VI) and Cr(III) were extracted by HOAc or EDTA + NH4 NO3 and adsorbed simultaneously by an anion and a cation resin microclummn and then eluted simultaneously by 2 mol/L NH4 NO3 + 0.05 mol/L ascorbate and 2 mol/L H2SO4, respectively. The elution was performed for 50 s after adsorption for 2 min, and the efficiencies of elution were 85.4% - 94.8% and 96.7% - 106% for Cr(VI) and Cr(M) respectively. The detection limits of the method were 0.9 mu g/L and 2.7 mu g/L with relative standard deviations of 3.5% and 6.4% for the determination of Cr(VI) and Cr(III) in sample, respectively.

Microcalorimetric investigation of the toxic action of Cr(VI) on the metabolism of Tetrahymena thermophila BF5 during growth

Tetrahymena thermophila BF5 produce heat by metabolism and movement. Using a TAM air isothermal microcalorimeter, the power-time curves of the metabolism of T thermophila BF5 during growth were obtained and the action on them by the addition of Cr(VI) were studied. The morphological change with Cr(VI) coexisted and biomass change during the process of T thermophila BF5 growth were studied by light microscope. Chromium has been regarded as an essential trace element for life. However, hexavalent chromium is a known carcinogen, mutagen, cytotoxicant and strong oxidizing agent. Cr(VI) of different concentration have different effects on T thermophila BF5 growth with the phenomenon of low dose stimulation (0-3 x 10(-5) mol L-1) and high dose inhibition (3 x 10(-5) to 2.4 x 10(-4) mol L-1). The relationship between the growth rate constant (k) and c is a typical U-shaped curve, which is a characteristic of hormesis. T thermophila BF5 cannot grow at all when the concentration of Cr(VI) is up to 2.4 x 10(-4) mol L-1. The microscopic observations agree well with the results obtained by means of microcalorimetry. And T thermophila BF5 had obviously morphological changes by the addition of Cr(VI). (c) 2006 Elsevier B.V. All rights reserved.

II-VI族半导体材料的光学性质研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

II-VI族半导体纳米团簇的制备及性质研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

II-VI 族纤锌矿结构量子棒的电子结构和光学性质

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

宽禁带II-VI 族半导体光学性质研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Revised ab initio natural band offsets of all group IV, II-VI, and III-V semiconductors

Using an all-electron band structure approach, we have systematically calculated the natural band offsets between all group IV, III-V, and II-VI semiconductor compounds, taking into account the deformation potential of the core states. This revised approach removes assumptions regarding the reference level volume deformation and offers a more reliable prediction of the "natural" unstrained offsets. Comparison is made to experimental work, where a noticeable improvement is found compared to previous methodologies.

Optimization of VI/II pressure ratio in ZnTe growth on GaAs(001) by molecular beam epitaxy

ZnTe epilayers were grown on GaAs(0 0 1) substrates by molecular beam epitaxy (MBE) at different VI/II beam equivalent pressure (BEP) ratios (R-VI/II) in a wide range of 0.96-11 with constant Zn flux. Based on in situ reflection high-energy electron diffraction (RHEED) observation, two-dimensional (2D) growth mode can be formed by increasing the R-VI/II to 2.8. The Te/Zn pressure ratios lower than 4.0 correspond to Zn-rich growth state, while the ratios over 6.4 correspond to Te-rich one. The Zn sticking coefficient at various VI/II ratios are derived by the growth rate measurement. The ZnTe epilayer grown at a R-VI/II of 6.4 displays the narrowest full-width at half-maximum (FWHM) of double-crystal X-ray rocking curve (DCXRC) for (0 0 4) reflection. Atomic force microscopy (AFM) characterization shows that the grain size enlarges drastically with the R-VI/II. The surface root-mean-square (RMS) roughness decreases firstly, attains a minimum of 1.14 nm at a R-VI/II of 4.0 and then increases at higher ratios. It is suggested that the most suitable R-VI/II be controlled between 4.0 and 6.4 in order to grow high-quality ZnTe epitaxial thin films.