Selective control of toxic Microcystis water blooms using lysine and malonic acid: An enclosure experiment

Three enclosures (10 x 10 x 1.5-1.3 m in depth) were set beside Dianch Lake, Kunming, People's Republic of China, for the period from July 28 to August 26, 2002. The enclosures were filled with cyanobacterial (Microcystis aeruginosa) water bloom-containing lake water. Lake sediment that contained macrophytes and water chestnut seeds was spread over the entire bottom of each enclosure. Initially, 10 g/m(2) of lysine was sprayed in Enclosure B, and 10 g/m(2) each of lysine and malonic acid were sprayed together in Enclosure C. Enclosure A remained untreated and was used as a control. The concentrations of lysine, malonic acid, chlorophyll a, and microcystin as well as the cell numbers of phytoplankton such as cyanobacteria, diatom, and euglena were monitored. On day 1 of the treatment, formation of cyanobacterial blooms almost ceased in Enclosures B and C, although Microcystis cells in the control still formed blooms. On day 7 Microcystis cells in Enclosure B that had been treated with lysine started growing again, whereas growth was not observed in Microcystis cells in Enclosure C, which had been treated with lysine and malonic acid. On day 28 the surface of Enclosure B was covered with water chestnut (Trapa spp.) and the Microcystis blooms again increased. In contrast, growth of macrophytes (Myriophllum spicatum and Potamogeton crispus) was observed in Enclosure C; however, no cyanobacterial blooms were observed. Lysine and malonic acid had completely decomposed. The microcystin concentration on day 28 decreased to 25% of the initial value, and the pH shifted from the initial value of 9.2 to 7.8. We concluded that combined treatment with lysine and malonic acid selectively controlled toxic Microcystis water blooms and induced the growth of macrophytes. (c) 2005 Wiley Periodicals, Inc.

Promoting strain relaxation of Si0.72Ge0.28 film on Si (100) substrate by inserting a low-temperature Ge islands layer in UHVCVD

A flat, fully strain-relaxed Si0.72Ge0.28 thin film was grown on Si (1 0 0) substrate with a combination of thin low-temperature (LT) Ge and LT-Si0.72Ge0.28 buffer layers by ultrahigh vacuum chemical vapor deposition. The strain relaxation ratio in the Si0.72Ge0.28 film was enhanced up to 99% with the assistance of three-dimensional Ge islands and point defects introduced in the layers, which furthermore facilitated an ultra-low threading dislocation density of 5 x 10(4) cm (2) for the top SiGe film. More interestingly, no cross-hatch pattern was observed on the SiGe surface and the surface root-mean-square roughness was less than 2 nm. The temperature for the growth of LT-Ge layer was optimized to be 300 degrees C. (C) 2008 Elsevier B.V. All rights reserved.

Temperature dependence of photoluminescence of flat and undulated SiGe/Si multiple quantum wells

Photoluminescence (PL) of strained SiGe/Si multiple quantum wells (MQW) with flat and undulated SiGe well layers was studied at different temperature. With elevated temperature from 10K, the no-phonon (NP) peak of the SiGe layers in the flat sample has firstly a blue shift due to the dominant transition converting from bound excitons (BE) to free excitons (FE), and then has a red shift when the temperature is higher than 30K because of the narrowing of the band gap. In the undulated sample, however, monotonous blue shift was observed as the temperature was elevated from 10 K to 287 K. The thermally activated electrons, confined in Si due to type-II band alignment, leak into the SiGe crest regions, and the leakage is enhanced with the elevated temperature. It results in a blue shift of the SiGe luminescence spectra.

八种气体中28种杂质全分析技术及质量监控

于G批量导入至Hzhangdi

电子级气体N2、H2、O2、Ar、He、HCl、CO2、NH3 28种杂质分析技术及质量监控

于G批量导入至Hzhangdi

In_(0.28)Ga_(0.72)As/GaAs量子点超晶格的生长

于2010-11-23批量导入

Temperature dependence of photoluminescence of flat and undulated SiGe/Si multiple quantum wells

Photoluminescence (PL) of strained SiGe/Si multiple quantum wells (MQW) with flat and undulated SiGe well layers was studied at different temperature. With elevated temperature from 10K, the no-phonon (NP) peak of the SiGe layers in the flat sample has firstly a blue shift due to the dominant transition converting from bound excitons (BE) to free excitons (FE), and then has a red shift when the temperature is higher than 30K because of the narrowing of the band gap. In the undulated sample, however, monotonous blue shift was observed as the temperature was elevated from 10 K to 287 K. The thermally activated electrons, confined in Si due to type-II band alignment, leak into the SiGe crest regions, and the leakage is enhanced with the elevated temperature. It results in a blue shift of the SiGe luminescence spectra.