A transfer matrix approach to conductance in quantum waveguides

A transfer matrix approach is presented for the study of electron conduction in an arbitrarily shaped cavity structure embedded in a quantum wire. Using the boundary conditions for wave functions, the transfer matrix at an interface with a discontinuous potential boundary is obtained for the first time. The total transfer matrix is calculated by multiplication of the transfer matrix for each segment of the structure as well as numerical integration of coupled second-order differential equations. The proposed method is applied to the evaluation of the conductance and the electron probability density in several typical cavity structures. The effect of the geometrical features on the electron transmission is discussed in detail. In the numerical calculations, the method is found to be more efficient than most of the other methods in the literature and the results are found to be in excellent agreement with those obtained by the recursive Green's function method.

On the soft wall guiding potentials in realistic quantum waveguides

A transfer matrix method is presented for the study of electron conduction in a quantum waveguide with soft wall lateral confinement. By transforming the two-dimensional Schrodinger equation into a set of second order ordinary differential equations, the total transfer matrix is obtained and the scattering probability amplitudes are calculated. The proposed method is applied to the evaluation of the electron transmission in two types of cavity structure with finite-height square-well confinement. The results obtained by our method, which are found to be in excellent agreement with those from another transfer matrix method, suggest that the infinite square-well potential is a good approximation to finite-height square-well confinement for electrons propagating in the ground transverse mode, but softening of the walls has an obvious effect on the electron transmission and mode-mixing for propagating in the excited transverse mode. (C) 1996 American Institute of Physics.

An asymmetric MOSFET-C band-pass filter with on-chip charge pump auto-tuning

An asymmetric MOSFET-C band-pass filter(BPF)with on chip charge pump auto-tuning is presented.It is implemented in UMC (United Manufacturing Corporation)0.18μm CMOS process technology. The filter system with auto-tuning uses a master-slave technique for continuous tuning in which the charge pump OUtputs 2.663 V, much higher than the power supply voltage, to improve the linearity of the filter. The main filter with third order low-pass and second order high-pass properties is an asymmetric band-pass filter with bandwidth of 2.730-5.340 MHz. The in-band third order harmonic input intercept point(HP3) is 16.621 dBm,wim 50 Ω as the source impedance. The input referred noise iS about 47.455μVrms. The main filter dissipates 3.528 mW while the auto-tuning system dissipates 2.412 mW from a 1.8 V power supply. The filter with the auto-tuning system occupies 0.592 mm~2 and it can be utilized in GPS (global positioning system)and Bluetooth systems.

High-Power Distributed Feedback Laser Diodes Emitting at 820nm

By etching a second-order grating directly into the Al-free optical waveguide region of a ridgewaveguide（RW） AlGaInAs/AlGaAs distributed feedback（DFB） laser diode,a front facet output power of 30mW is obtained at about 820nm with a single longitudinal mode. The Al-free grating surface permits the re-growth of a high-quality cladding layer that yields excellent device performance. The threshold current of these laser diodes is 57mA,and the slope efficiency is about 0.32mW/mA.

Twinning in Low-Temperature MOCVD Grown GaN on (001) GaAs Substrate

GaN buffer layers (thickness ～60nm) grown on GaAs(001) by low-temperature MOCVD are investigated by X-ray diffraction pole figure measurements using synchrotron radiation in order to understand the heteroepitaxial growth features of GaN on GaAs(001) substrates. In addition to the epitaxially aligned crystallites,their corresponding twins of the first and the second order are found in the X-ray diffraction pole figures. Moreover, { 111 } q scans with χ at 55° reveal the abnormal distribution of Bragg diffractions. The extra intensity maxima in the pole fig ures shows that the process of twinning plays a dominating role during the growth process. It is suggested that the polarity of { 111 } facets emerged on (001) surface will affect the growth-twin nucleation at the initial stages of GaN growth on GaAs(001) substrates. It is proposed that twinning is prone to occurring on { 111 } B, N-terminated facets.

Silicon: the promising material for phontonic integrated circuits platform

The development of optical network demands integrated arid multiple functionality modules to lowing cost and acquire highly reliability. Among the various contender materials to be photonic integrated circuits platform, silicon exhibits dominant characteristics and is the most promising platform materials. The paper compares the characteristics of some candidate materials with silicon and reviews recent progress in silicon based photonic integration technology. Tile challenges to silicon for optical integration for optical networking application arc also indicated.

Surface Emitting Distributed Feedback Quantum Cascade Laser around 8.3 mu m

We demonstrate surface emitting distributed feedback quantum cascade lasers emitting at wavelengths from 8.1 mu m at 90 K to 8.4 mu m at 210 K. The second-order metalized grating is carefully designed using a modified coupled-mode theory and fabricated by contact lithography. The devices show single mode behavior with a side mode suppression ratio above 18 dB at all working temperatures. At 90 K, the device emits an optical power of 101 mW from the surface and 199 mW from the edge. In addition, a double-lobe far-field pattern with a separation of 2.2 degrees is obtained in the direction along the waveguide.

Parallel Fully-Implicit Computation of Magnetohydrodynamics Acceleration Experiments

A three-dimensional MHD solver is described in the paper. The solver simulates reacting flows with nonequilibrium between translational-rotational, vibrational and electron translational modes. The conservation equations are discretized with implicit time marching and the second-order modified Steger-Warming scheme, and the resulted linear system is solved iteratively with Newton-Krylov-Schwarz method that is implemented by PETS,: package. The results of convergence tests arc plotted, which show good scalability and convergence around twice faster when compared with the DPLR method. Then five test runs are conducted simulating the experiments done at the NASA Ames MHD channel, and the calculated pressures, temperatures, electrical conductivity, back EMF, load factors and flow accelerations are shown to agree with the experimental data. Our computation shows that the electrical conductivity distribution is not uniform in the powered section of the MHD channel, and that it is important to include Joule heating in order to calculate the correct conductivity and the MHD acceleration.

HIRFL剥离器后切束线物理设计

HIRFL is a tandem cyclotron complex for heavy ion. On the beam line between SFC and SSC, there is a stripper. Behind it, the distribution of charge states of beam is a Gauss distribution. The equilibrium charge state Q_0 is selected by 1BO2(a 50° dipole behind the stripper) and delivered to SSC. One of two new small beam line (named SLAS) after 1B02 will be builded in or der to split and deliver the unused ions of charge states (Q_0 ± n) to aspecific experimental area. Q_0 ± n ions are septumed and separated from initial(Q_0) ion beam by two septum magnets SM1, SM2. The charge state selected by SM1 will be Q_0 ± 1(6 ≤ Q_0 < 17), Q_0 ± 2(17 ≤ Q_0 < 33) and Q_0 ± 3 (Q_0 ≥ 33) forming a beam in one of the two possine new beam line with the stripping energy of (0.2 to 9.83 Mev/A), an emittance of 10π mm.mrad in the two transverse planes and an intensity ranging from 10~(11) pps for z ≤ 10 to some 10~5 pps for the heaviest element. Behind SM2, a few transport elements (three dipoles and seven qudrupoles) tra nsport Q_0 ± n beam to target positions T1, T2 (see fig. 1) and generate small beam spots (φ ≤ 4mm, φ ≤ 6mm). The optics design of the beam line has been done based on SLAC-75 (a first and second - order matrix theory). beam optics calculation has been worked out with the TRANSPORT program. The design is a very economical thinking, because without building a new accelerator we can obtain a lower energy heavy ion beam to provide for a lot of atomic and solid state physical experiments

Computational study on the addition of HCN to methanimine catalyzed by formamidine and formamide

In this paper, we have carried out a theoretical study on the addition of HCN to methanimine with formamidine or formamide using second-order Moller-Plesset perturbation (MP2) method with 6-31 + G(d,p) basis sets. At MP2 level. a high-energy, intermediate has been located for each pathway. The addition of HCN to methanimine with formamidine has the lowest free energy barrier according to the calculations at MP2 level. (C) 2004 Elsevier B.V. All rights reserved.

Low-threshold conjugated polymer distributed feedback lasers on InP substrate

We demonstrate a low threshold polymer solid state thin-film distributed feedback (DFB) laser on an InP substrate with the DFB structure. The used gain medium is conjugated polymer poly[2-methoxy-5-(2-ethylhexyloxy)-1, 4-phenylenevinylene] (MEH-PPV) doped polystyrene (PS) and formed by drop-coating method. The second order Bragg scattering region on the InP substrate gave rise to strong feedback, thus a lasing emission at 638.9nm with a line width of 1.2nm is realized when pumped by a 532nm frequency-doubled Nd: YAG pulsed laser. The devices show a laser threshold as low as 7 nJ/pulse.

Effect of Single- and co-Dopant on TL of Sr2Mg(BO3)(2) Phosphor

Sr2Mg(BO3)(2) thermoluminescence (TL) phosphor was synthesized by a high temperature solid state reaction and the effect of Li+, Bi3+, Gd3+ or Ti4+ as a codopant on TL of Sr2Mg(BO3)(2) : Dy was investigated. The results show that Li+ as a codopant improves the emission intensity of high temperature TL peak of Sr2Mg(BO3)(2) : Dy phosphor whereas the addition of Bi3+, Gd3+ or Ti3+ leads to the decrease of TL intensity. The TL emission bands of Sr2Mg(BO3)(2) : Dy phosphors with Li+, Bi3+, Gd3+ or Ti4+ as a codopant are situated at 480, 579, 662 and 755 nm, which were attributed to the characteristic F-4(9/2)-> H-6(15/2), F-4(9/2)-> H-6(13/2), F-4(9/2)-> H-6(11/2) and F-4(9/2)-> H-6(9/2) transitions of Dy3+ ion, consistent with the emission of Sr2Mg(BO3)(2) : Dy phosphors. The kinetics parameters of 234 degrees C TL peak of Sr2Mg(BO3)(2) Dy-0.04(3+), (Li-0.04(+)) phosphor with the values of trap depth E=1.1 eV, frequency factor s=6.3 x 10(9) s(-1) were estimated by a peak shape method, which obey the second order kinetics.

Effect of Single- and co-Dopant on TL of Sr2Mg(BO3)(2) Phosphor(单掺杂与共掺杂离子对Sr_2Mg(BO_3)_2磷光体热释发光的影响)

Sr2Mg(BO3)(2) thermoluminescence (TL) phosphor was synthesized by a high temperature solid state reaction and the effect of Li+, Bi3+, Gd3+ or Ti4+ as a codopant on TL of Sr2Mg(BO3)(2) : Dy was investigated. The results show that Li+ as a codopant improves the emission intensity of high temperature TL peak of Sr2Mg(BO3)(2) : Dy phosphor whereas the addition of Bi3+, Gd3+ or Ti3+ leads to the decrease of TL intensity. The TL emission bands of Sr2Mg(BO3)(2) : Dy phosphors with Li+, Bi3+, Gd3+ or Ti4+ as a codopant are situated at 480, 579, 662 and 755 nm, which were attributed to the characteristic F-4(9/2)-> H-6(15/2), F-4(9/2)-> H-6(13/2), F-4(9/2)-> H-6(11/2) and F-4(9/2)-> H-6(9/2) transitions of Dy3+ ion, consistent with the emission of Sr2Mg(BO3)(2) : Dy phosphors. The kinetics parameters of 234 degrees C TL peak of Sr2Mg(BO3)(2) Dy-0.04(3+), (Li-0.04(+)) phosphor with the values of trap depth E=1.1 eV, frequency factor s=6.3 x 10(9) s(-1) were estimated by a peak shape method, which obey the second order kinetics.

Electrocatalytic reduction of 1,2-diiodoethane by anions of supramolecular complex of (beta-CD)(2)/C-60 in DMF solution

The homogeneous electrocatalytic reduction of 1,2-diiodoethane by anions of the supramolecular complex of (beta-CD)(2)/C-60 in DMF solution is reported. The results show that the trianion of (beta-CD)(2)/C-60 exhibits electrocatalytic behavior towards the reduction of 1,2-diiodoethane, whereas the diani on is unable to reduce the diiodoethane. The second-order catalytic rate constant in DMF solution was determined to be 3.1 x 10(5) M-1 s(-1) by analysis of voltammetric responses under pseudo-first-order conditions with respect to (beta-CD)(2)/C-60. The results suggest that the host beta-cyclodextrin molecules have little effect on the electrocatalytic ability of the encapsulated C-60 toward organic halides.

Studies on the stability of polyazamacrocycle-Eu (Tb) by potentiometry and its catalytic hydrolysis on phosphate diester

The stability constants and species distributions of complexes of two lanthanide ions, Eu (III) and Tb(III), with a macrocyclic ligand, 3,6, 9, 17 20, 23-hexaazo-29, 30-dihydroxy-13, 27-dimethyl-tricylco-[23,3,1,1(11,15)] triaconta-1 (28) 11,13,15 (30), 25 26-hexane (BDBPH), in 1: 1 and 2: 1 system, were determined potentiometrically in 50% ethanol solution, at 35.0 degrees C and I = 0.100 mol/L (KCl). The two metal ions could form deprotonated mono- or dinuclear complexes with BDBPH with high stability after the three protons of the ligand completely neutralized. At higher pH values, Eu(M) could not form hydroxo complexes with BDBPH, while Tb(III) could form hydroxo complexes in the types of M2L(OH) M2L(OH)(2) and M2L (OH)(2). The kinetic study on the hydrolysis reaction of his (4-nitrophenyl) phosphate (BNPP) catalyzed by Tb-BDBPH system (2:1) was carried out in aqueous solution (pH 7.0 similar to 10.0) at 35 degrees C with I = 0.1000 mol/L (KCl). The second-order rate constant k(BNPP) (2.3 x 10(-3) (mol/L)(-1)center dot s(-1)) was determined. The dinuclear monohydroxo species, L-Tb-2-OH, is kinetically active species.