241 resultados para low energy Fe ion beams


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Ion acceleration by ultrashort circularly polarized laser pulse in a solid-density target is investigated using two-dimensional particle-in-cell simulation. The ions are accelerated and compressed by the continuously extending space-charge field created by the evacuation and compression of the target electrons by the laser light pressure. For a sufficiently thin target, the accelerated and compressed ions can reach and exit from the rear surface as a high-density high-energy ion bunch. The peak ion energy depends on the target thickness and reaches maximum when the compressed ion layer can just reach the rear target surface. The compressed ion layer exhibits lateral striation which can be suppressed by using a sharp-rising laser pulse. (c) 2008 American Institute of Physics.

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The interaction of a circularly polarized laser pulse with a mixed solid target containing two species of ions is studied by particle in cell simulations and analytical model. After the interaction tends to be stable, it is demonstrated that the acceleration is more efficient for the heavier ions than that in plasmas containing a single kind of heavy ion and the acceleration efficiency is higher when its proportion is lower. To obtain monoenergetic heavy-ion beams, a sandwich target with a thin mixed ion layer between two light ion layers and a microstructured target are proposed. The influences of parameters of the laser pulse and target on ion acceleration are discussed in detail. It is found that, when the target is thick enough, a cold target is more appropriate for heavy-ion acceleration than a warm target, and the velocity of the reflected heavy ions is proportional to the laser amplitude.

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K9,O2^+.,.:18.6/mm^26.2/mm^2,15.9 J/cm^223.1 J/cm^2,1.14710^-49.5610^-5.:

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A ridge distributed feedback laser monolithically integrated with a buried-ridge-stripe spot-size converter operating at 1.55 mu m was successfully fabricated by means of low-energy ion implantation quantum-well intermixing and dual-core technologies. The passive waveguide was optically combined with a laterally exponentially tapered active core to control the mode size. The devices emit in a single transverse and single longitudinal mode with a sidemode suppression ratio of 38.0 dB. The threshold current was 25 mA. The beam divergence angles in the horizontal and vertical directions were as small as 8.0 degrees x 12.6 degrees, respectively, resulting in 3.0-dB coupling loss with a cleaved single-mode optical fiber.

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Considering the complexity of the general plasma techniques, pure single CH3+ ion beams were selected for the deposition of hydrogenated amorphous (a) carbon films with various ion energies and temperatures. Photoluminescence (PL) measurements have been performed on the films and violet/blue emission has been observed. The violet/blue emission is attributed to the small size distribution of sp(2) clusters and is related to the intrinsic properties of CH3 terminals, which lead to a very high barrier for the photoexcited electrons. Ion bombardment plays an important role in the PL behavior. This would provide further insight into the growth dynamics of a-C:H films. (C) 2002 American Institute of Physics.

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It is well known that the value of room-temperature conductivity sigma(RT) of boron-doped silicon films is one order lower than that of phosphorus-doped silicon films, when they are deposited in an identical plasma-enhanced chemical vapour deposition system. We use surface acoustic wave and secondary-ion mass spectrometry techniques to measure the concentration of total and electrically active boron atoms. It is shown that only 0.7% of the total amount of incorporated boron is electrically active. This is evidence that hydrogen atoms can passivate substitutional B-Si bonds by forming the neutral B-H-Si complex. By irradiating the boron-doped samples with a low-energy electron beam, the neutral B-H-Si complex converts into electrically active B-Si bonds and the conductivity can be increased by about one order of magnitude, up to the same level as that of phosphorus-doped samples.

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Planar punch through heterojunction phototransistors with a novel emitter control electrode and ion- implanted isolation (CE-PTHPT) are investigated. The phototransistors have a working voltage of 3-10V and high sensitivity at low input power. The base of the transistor is completely depleted under operating condition. Base current is zero. The CE-PTHPT has an increased speed and a decreased noise. The novel CE-PTHPT has been fabricated in this paper. The optical gain of GaAlAs/GaAs CE-PTHPT for the incident light power 1.3 and 43nw with the wavelength of 0.8 mu m reached 1260 and 8108. The input noise current calculated is 5.46 x 10(-16) A/H-z(1/2). For polysilicon emitter CE-PTHPT, the optical gain is 3083 at the input power of 0.174 mu w. The optical gain of InGaAs/InP CE-PTHPT reaches 350 for an incident power of 0.3 mu w at the wavelength of 1.55 mu m. The CE-PTHPT detectors is promising as photo detectors for optical fiber communication system.

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HIRFL-CSR, a new heavy ion cooler-storage-ring system at IMP, had been in commissioning since the beginning of 2006. In the two years of 2006 and 2007 the CSR commissioning was nished, including the stripping injection (STI), electron-cooling with hollow electron beam, C-beam stacking with the combination of STI and e-cooling, the wide energy-range synchrotron ramping from 7 MeV/u to 1000 MeV/u by changing the RF harmonic-number at mid-energy, the multiple multi-turn injection (MMI), the beam accumulation with MMI and e-cooling for heavy-ion beams of Ar, Kr and Xe, the fast extraction from CSRm and single-turn injection to CSRe, beam stacking in CSRe and the RIBs mass-spectrometer test with the isochronous mode in CSRe by using the time-of-ight method.

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A new generation electron cooler has started operation in the heavy ion synchrotron CSRm which is used to increase the intensity of heavy ions. Transverse cooling of the ion beam after horizontal multi-turn injection allows beam accumulation at the injection energy. After optimization of the accumulation process an intensity increase in a synchrotron pulse by more than one order of magnitude has been achieved. In given accumulation time interval of 10 seconds, 108particles have been accumulated and accelerated to the nal energy. The momentum spread after accumulation and acceleration in the 104 range has been demonstrated in six species of ion beams. Primary measurements of accumulation process varying with electron energy,electron beam current, electron beam prole, expansion factor and injection interval have been performed.The lifetimes of ion beams in the presence of electron beams were roughly measured with the help of DCCT signal.

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A high energy heavy ion microbeam irradiation system is constructed at the Institute of Modern Physics (IMP) of the Chinese Academy of Sciences (CAS). A quadrupole focusing system, in combination with a series of slits, has been designed here. The IMP microbeam system is described in detail. The intrinsic and parasitic aberrations associated with the magnets are simulated. The ion beam optics of this microbeam system is investigated systematically. Then the optimized initial beam parameters are given for high spatial resolution and high hitting rates.

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Electron Cyclotron Resonance (ECR) ion source is regarded as the most efficient machine to produce stable multiple charge state ion beams. Because of the special characteristics, all-permanent magnet ECR ion sources have been widely adopted around the world to produce stable ion beams of multiple charge state with good repetition have been widely adopted around the world to produce stable ion beams of multiple charge state with good repetition and high duty factor for compact research platforms and ion beam implanters. In this paper, all-permanent magnet ECR ion sources developed at IMP are presented, and typical parameters and performances are discussed. The high charge state source, LAPECR2, is mainly used to produce intense high charge state ion beams, and the LAPECR1 source is designed to produce intense ion beams of medium and low charge state. An improved LAPECR1-M is specially designed to produce heavy metal ion beams of low charge state. These ECR ion sources have been adopted by different experimental terminals at IMP and, with their nice performance, many experimental studies could be possible. ECR()ECR ECR LAPECR2 LAPECR1LAPECR1-M

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To investigate the hot electrons in highly charged electron cyclotron resonance (ECR) plasma, Bremsstrahlung radiations were measured on two ECR ion sources at the Institute of Modern Physics. Used as a comparative index of the mean energy of the hot electrons, a spectral temperature, Tspe, is derived through a linear tting of the spectra in a semi-logarithmic representation. The inuences of the external source parameters, especially the magnetic conguration, on the hot electrons are studied systematically. This study has experimentally demonstrated the importance of high microwave frequency and high magnetic eld in the electron resonance heating to produce a high density of hot electrons, which is consistent with the empirical ECR scaling laws. The experimental results have again shown that a good compromise is needed between the ion extraction and the plasma connement for an efcient production of highly charged ion beams. In addition, this investigation has shown that the correlation between the mean energy of the hot electrons and the magnetic eld gradient at the ECR is well in agreement with the theoretical models.ECR() ECR ECRLAPECR2LAPECR1LAPECR1-M

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Amorphous SiO2 (a-SiO2) thin films were thermally grown on single-crystalline silicon. These a-SiO2/Si samples were first implanted (C-doped) with 100-keV carbon ion at room temperature (RT) at a dose of 5.0 x 10(17) C-ions/cm(2) and were then irradiated at RT by using 853 MeV Pb ions at closes of 5.0 x 10(11), 1.0 x 10(12), 2.0 x 10(12) and 5.0 x 10(12) Pb-ions/cm(2), respectively. The microstructures and the photoluminescence (PL) properties of these samples induced by Pb ions were investigated using fluorescence spectroscopy and transmission electron microscopy. We found that high-energy Pb-ion irradiation could induce the formation of a new phase and a change in the PL property of C-doped a-SiO2/Si samples. The relationship between the observed phenomena and the ion irradiation parameters is briefly discussed.

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This paper presents an introduction to the application of ion traps and storage devices for cluster physics. Some experiments involving cluster ions in trapping devices such as Penning traps, Paul traps, quadrupole or multipole linear traps are briefly discussed. Electrostatic ion storage rings and traps which allow for the storage of fast ion beams without mass limitation are presented as well. We also report on the recently developed mini-ring, a compact electrostatic ion storage ring for cluster, molecular and biomolecular ion studies.

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The ratios R-k1 of k-fold to single ionization of the target atom with simultaneous one-electron capture by the projectile have been measured for 15-480 keV/u (nu(p) = 0.8-4.4 a.u.) collisions of Cq+, Oq+ (q=1-4) with Ar, using time-of-flight techniques which allowed the simultaneous identification of the final charge state of both the low-velocity recoil ion and the high-velocity projectile for each collision event. The present ratios are similar to those for He+ and He2+ ion impact. The energy dependence of R-k1 shows a maximum at a certain energy, E-max. which approximately conforms to the q(1/2)-dependence scaling. For a fixed projectile state, the ratios R-k1 also vary strongly with outgoing reaction channels. The general behavior of the measured data can be qualitatively analyzed by a simple impact-parameter, independent-electron model. (C) 2009 Elsevier B.V. All rights reserved.