基于棱镜实现三倍频谐波分离

基于棱镜的色散特性,提出一种楔形窗口与聚焦透镜组合的方式,解决了高功率激光装置三倍频谐波分离所存在的问题,即三倍频的高通量传输和靶面辐照。结合“神光Ⅱ”装置多功能高能激光系统有关参数进行系统设计,确定了楔形窗口参数,并对其所引起的B积分和间距误差进行了分析。通过实验测试,三倍频传输通量由0.7～1 J/cm2提高到2.8 J/cm2,同时靶面三倍频和二倍频分离间距达到2.85 mm,实现了高功率激光装置高通量传输的三倍频谐波分离。

光谱相位相干技术测量飞秒脉冲的倍频误差

从理论上推导了第Ⅱ类相位匹配下宽带飞秒脉冲的二次谐波光场,分析输入飞秒脉冲的非共线相位匹配方式、脉冲带宽引起相位失配与群速失配对测量的影响。结果表明,为了消除飞秒脉冲的带宽影响,需要对测量记录的光强乘以一个调制因子;测量相位误差与非共线相位匹配的夹角和晶体长度成正比;相位失配与群速失配产生相位测量误差,且第Ⅱ类相位匹配方式下脉冲附加相位值较大;强度和相位误差需要在脉冲重建结果中补偿。

高稳定高转换效率光参变放大器倍频抽运光源研究

为了实现光参变放大抽运光源高稳定输出的目的。通过对倍频过程的数值模拟分析，提出倍频中存在“稳定区”的概念，在基频光强一定的条件下（小于倍频晶体破坏阈值），通过非共线双程倍频的方式或串联倍频的方式可有效延长倍频晶体的有效作用长度，保证倍频工作区能够被控制在“稳定区”内，从而实现高稳定高转换效率的倍频输出。实验数据验证了这一结论，实验中，利用非共线双程倍频的方式使得倍频工作区在“稳定区”内，对波动±5．7％的1064nm高斯脉冲基频光，倍频光波动小于±2％，脉冲形状为高阶高斯脉冲，转换效率大于70％，实验结果

Non-resonant third-order non-linear optical properties of amorphous GeSe2 film

The real and imaginary parts of third-order susceptibility of amorphous GeSe2 film were measured by the method of the femtosecond optical heterodyne detection of optical Kerr effect at 805 nm with the 80 fs ultra fast pulses. The results indicated that the values of real and imaginary parts were 8.8 x 10(-12) esu and -3.0 x 10(-12) esu, respectively. An amorphous GeSe2 film also showed a very fast response within 200 fs. The ultra fast response and large third-order non-linearity are attributed to the ultra fast distortion of the electron orbits surrounding the average positions of the nucleus of Ge and Se atoms. (c) 2005 Elsevier B.V. All rights reserved.

PPLT倍频宽线宽掺镱双包层光纤放大激光

分别通过理论和实验研究了周期性极化的钽酸锂（PPLT）倍频宽线宽准连续掺镱双包层光纤放大激光．PPLT样品长为40mm，极化周期为7．67μm．基频光的中心波长为1064nm，线宽约为6nm。从基频光的光谱特性出发，利用超晶格倍频理论，解释了实验中获得的倍频温度与二次谐波功率之间的关系．在基频光的功率为2．2W时，获得的宽线宽光纤激光倍频效率为1．8％。

532 nm激光泵浦硝酸钡晶体产生外腔拉曼激光

由于硝酸钡晶体具有很强的对称振动（频率1047 cm^-1）和较高的拉曼增益,可以用来产生受激拉曼激光.采用单端泵浦的外置拉曼振荡腔与双棱镜分光装置进行了硝酸钡晶体拉曼激光实验,泵浦源为倍频Nd： YAG的532 nm激光,硝酸钡晶体通过水溶液降温法生长,尺寸为10 mm×10 mm×48 mm,采用特殊镀膜的腔镜对各阶斯托克斯光进行优化选择.在泵浦源达到65 mJ时,获得21 mJ一阶斯托克斯光,输出波长为563 nm,以及16 mJ的二阶斯托克斯光,输出波长为599 nm,受激拉曼散射SRS最大的整体

飞秒激光辐照ZnO晶体

利用飞秒激光对ZnO晶体进行辐照，对辐照前后的晶体样品进行发光光谱及拉曼光谱检测。辐照后发光光谱的某些发光峰强度有明显增强，但未产生新的发光峰，表明没有新的缺陷结构产生，但晶体内锌空位、间隙位锌、间隙位缺陷浓度增加。拉曼光谱结果表明，辐照后ZnO晶体未产生相变，但随着辐照激光功率的增大，拉曼峰327 cm-1，437 cm-1强度明显减弱，表明在飞秒激光辐照作用下氧化锌的结晶程度下降。但574 cm-1峰值却随着辐照功率的增大而变大，分析表明该拉曼峰很可能是由于晶体内间隙位缺陷所致。同时实验过程中观察到飞

Preparation of crystalline beta barium borate thin films on Sr2+-doped alpha barium borate substrates by liquid phase epitaxy

Thin films of beta barium borate have been prepared by liquid phase epitaxy on Si2+-doped alpha-BaB2O4 (alpha-BBO, the high temperature phase of barium berate) (001) and (110) substrates. The results of X-ray diffraction indicate that the films show highly (001) preferred orientation on (001)-oriented substrates while the films grown on (110) substrates are textured with (140) orientation. The crystallinity of these films was found to depend on growth temperature, rotation rate, dip time and orientation of substrate. Growth conditions were optimized to grow films with (001) orientation on (001) substrates reproducibly. The films show second harmonic generation of 400 nm light upon irradiation with 800 nm Ti: Sapphire femtosecond laser light. (c) 2005 Elsevier B.V. All rights reserved.

Defects in LPE-grown beta-barium borate (beta-BaB2O4) thin films

Morphological defects in beta-barium borate (beta-BBO) thin films grown on Sr2+ -doped alpha-BBO substrates by liquid phase epitaxy (LPE) technique were studied by scanning electron micrograph (SEM), atomic force microscopy (AFM) and optical spectroscopy. The present results indicate that the main defects exit in beta-BBO thin films are microcracks and hollow structure. The formation of microcrack is due to the lattice mismatch and the difference of thermal expansion coefficients between substrate and film. The hollow structure might be caused during the combination of islands, which formed in the initial stage. (C) 2006 Elsevier GmbH. All rights reserved.

液相外延法制备β-BBO薄膜

采用液相外延法在掺Sr^2＋的Q—BBO（001）衬底上制备了β-BBO薄膜，研究了制备条件对薄膜质量的影响．结果表明：当生长温度为810℃时，转速为300r／min生长的外延膜具有较高的结晶质量，且随着生长时间的延长，外延膜的结晶质量有所提高．β—BBO薄膜呈C轴高度择优取向，薄膜的双晶摇摆曲线半峰宽值FWHM仅为676．6”，表明β-BBO薄膜较好的结晶质量；在不具备相位匹配的条件下，β—BBO外延膜也能够实现二次谐波输出．

1053，527，351nm倍频分离膜的制备与性能研究

用电子束蒸发及光电极值监控技术在石英基底上沉积了三倍频分离膜，将部分样品置空气中于250℃温度下进行3h热退火处理。然后用Lambda900分光光度计测量了样品的光谱性能；用表面热透镜技术测量了样品的弱吸收值；用调Q脉冲激光装置测试了样品分别在355nm和1064nm的抗激光损伤阈值。实验结果发现，样品的实验光谱性能良好。退火前后其光谱性能几乎没有发生温漂，说明薄膜的温度稳定性好；同时弱吸收平均值从退火前的1.07×10^-4下降到退火后的6．2×10^-5，从而使对基频的抗激光损伤阈值提高，从14．6J

1064nm倍频波长分离膜的制备与性能研究

通过对主膜系添加匹配层并借助计算机对膜系进行优化，设计出结构规整、性能优良的1064ilm倍频波长分离膜。用电子束蒸发及光电极值监控技术在K9玻璃基底上沉积薄膜，将样品置于空气中在260℃温度下进行3h热退火处理。然后用Lambda 900分光光度计测量了样品的光谱性能；用表面热透镜(STL)技术测量了样品的弱吸收值；用调Q脉冲激光装置测试了样品的抗激光损伤阈值(LIDT)。实验结果发现，样品的实验光谱性能与理论光谱性能有很好的一致性。退火前后其光谱性能几乎没有发生温漂，说明薄膜的温度稳定性好；同时退火使

倍频波长分离膜半波孔的消除

指出了膜料色散、膜层折射率非均匀性以及膜厚控制误差积累等是导致半波孔产生的几个因素，其中膜层厚度周期性误差积累和敏感层厚度误差是导致半波孔的主要因素，还指出了半波孔的大小与膜系结构有关。借助计算机做了相应的数值计算，并从理论上进行了深入分析。针对这些因素采取相应的措施，设计和制备了倍频波长分离膜，有效地消除了半波孔。并给出了理论和实验光谱曲线，二者有很好的一致性。

三倍频分光膜在1064 nm的破斑特性研究

采用电子束蒸发方式制备了两种不同材料组合的分光膜,分别对其在波长1064 nm激光辐照下的损伤阈值进行了测试,用Alpha-Step 500台阶仪对破斑进行了深度测量。实验结果表明,破斑呈现出表面层的剥落和深坑破坏两种形态。表面层的剥落深度在一定范围内不随能量密度的变化而变化；深坑破坏深浅不一,是膜内缺陷融化、汽化及喷发的综合作用的结果,是损伤阈值降低的主要原因。

Passive stabilization of a passively mode-locked Nd : GdVO4 laser by inverse saturable absorption

A diode-pumped Nd:GdVO4 laser mode-locked by a semiconductor saturable absorber and output coupler (SESAOC) is passively stabilized to suppress Q-switched mode-locking. A phase mismatched 131130 second-harmonic generation (SHG) crystal is used for passive stabilization. The continuous wave mode-locking (CWML) threshold is reduced and the pulse width is compressed. The pulse width is 6.5 ps as measured at the repetition rate of 128 MHz. (c) 2007 Elsevier B.V. All rights reserved.