Collective and single-particle excitations in coupled quantum wires in magnetic fields

The full spectra of magnetoplasmons and single-particle excitations are obtained of coupled one-dimensional electron gases in parallel semiconductor quantum wires with tunneling. We show the effects of the interwire Coulomb interaction and the tunneling, as well as the magnetic-field-induced localization on the elementary excitations in symmetric and asymmetric coulped quantum wire structures. The interacton and resonance between the plasmon and the intersubband single-particle excitations are found in magnetic fields.

Quantum computation with coupled quantum dots embedded in optical microcavities

Based on an idea that spatial separation of charge states can enhance quantum coherence, we propose a scheme for a quantum computation with the quantum bit (qubit) constructed from two coupled quantum dots. Quantum information is stored in the electron-hole pair state with the electron and hole located in different dots, which enables the qubit state to be very long-lived. Universal quantum gates involving any pair of qubits are realized by coupling the quantum dots through the cavity photon which is a hopeful candidate for the transfer of long-range information. The operation analysis is carried out by estimating the gate time versus the decoherence time.

Operation of the qubit based on photon-assisted tunneling in a coupled quantum-dot system and the influence of dephasing

We derive the generalized rate equation for the coupled quantum-dot (QD) system irradiated by a microwave field in the presence of a quantum point contact. It is shown that when a microwave field is tuned in resonance with the energy difference between the ground states of two QD's, the photon-assisted tunneling occurs and, as a result, the coupled QD system may be used as the single qubit. Furthermore, we show that the oscillating current through the detector decays drastically as the dephasing rate increases, indicating clearly the influence of the dephasing effect induced by the quantum point contact used as a detecting device.

Quantum-confined magneto-Stark effect in diluted magnetic semiconductor coupled quantum wells

The magneto-Stark effect in a diluted magnetic semiconductor (DMS) coupled quantum well (CQW) induced by an in-plane magnetic field is investigate theoretically. Unlike the usual electro-Stark effects, in a DMS CQW the Lorenz force leads to a spatially separated exciton. The in-plane magnetic field can shift the ground state of the magnetoexciton from a zero in-plane center of mass (CM)/momentum to a finite CM momentum, and render the ground state of magnetoexciton stable against radiative recombination due to momentum conservation. (C) 2002 American Institute of Physics.

Detection of efficient carrier capture in ultrathin InAs/GaAs layers using a degenerate pump-probe technique

By analysing the carrier dynamics based on the rate equations and the change of the refractive index due to the efficient carrier capture, we have calculated the carrier capture process in the InAs/GaAs system detected by a simple degenerate pump-probe technique. The calculated results are found to be in good agreement with the experimental findings. Our results indicate that this simple technique, with the clear advantage of being easy to carry out, can be very useful in studying the carrier dynamics for some specific structures such as InAs ultrathin layers embedded in a GaAs matrix described here.

Novel coupled multi-active region high power semiconductor lasers cascaded via tunnel junction

A novel semiconductor laser structure is put forward to resolve the major difficulties of high power laser diodes. In this structure, several active regions are cascaded by tunnel junctions to form a large optical cavity and to achieve super high efficiency. This structure can solve the problems of catastrophic optical damage of facet, thermal damage and poor light beam quality effectively. Low-pressure metalorganic chemical vapor deposition method is adopted to grow the novel semiconductor laser structures, which are composed of Si:GaAs/C:GaAs tunnel junctions, GaAs/InGaAs strain quantum well active regions. External differential quantum efficiency as high as 2.2 and light power output of 2.5 W per facet (under 2A drive current) are achieved from an uncoated novel laser device with three active regions.

Carrier transport properties of the (n)nc-Si : H/(p)c-Si heterojunction

Phosphor-doped nano-crystalline silicon ((n))nc-Si:H) films are successfully grown on the p-type (100) oriented crystal silicon ((p) c-Si) substrate by conventional plasma-enhanced chemical vapor deposition method. The films are obtained using high H-2 diluted SiH4 as a reaction gas source and using PH3 as the doping gas source of phosphor atoms. Futhermore, the heterojunction diodes are also fabricated by using (n)nc-Si:H films and (p)c-Si substrate. I-V properties are investigated in the temperature range of 230-420K. The experimental results domenstrate that (n)nc-Si:H/(p) c-Si heterojunction is a typical abrupt heterojunction having good rectifing and temperature properties. Carrier transport mechanisms are tunneling - recombination model at forward bias voltages. In the range of low bias voltages ( V-F< 0.8 V), the current is determined by recombination at the (n)nc-Si:H side of the space charge region, while the current becomes tunneing at higher bias voltages( V-F>1.0 V). The present heterojunction has high reverse breakdown voltage ( > - 75 V) and low reverse current (approximate to nA).

Study of rapid carrier capture and relaxation in InAs/GaAs heterostructures

The rapid carrier capture and relaxation processes in InAs/GaAs quantum dots were studied at 77K by using a simple degenerate pump-probe technique. A rising process was observed in the transient reflectivity, following the initial fast relaxation associated with GaAs bulk matrix, and this rising process was assigned to be related to the carrier capture from the GaAs barriers to InAs layers. The assignment was modeled using Kramers-Kronig relation. By analyzing the rising process observed in the transient reflectivity, the carrier capture time constants were obtained. The measured capture times decrease with the increase of carrier concentration.

Carrier capture into InAs/GaAs quantum dots detected by a simple degenerate pump-probe technique

We demonstrate that the carrier capture and relaxation processes in InAs/GaAs quantum dots can be detected by a simple degenerate pump-probe technique. We have observed a rising process in the transient reflectivity, following the initial fast relaxation in a GaAs matrix, and assigned this rising process to the carrier capture from the GaAs barriers to the InAs layers. The assignment was modeled using the Kramers-Kronig relations. The capture time was found to depend strongly on the InAs layer thickness as well as on the excitation density and photon energy. (C) 2000 Elsevier Science Ltd. All rights reserved.

Self-sustained oscillations caused by magnetic field in a weakly-coupled GaAs/AlAs superlattice

We have investigated the influence of transverse magnetic field B up to 14 T at 1.6 K on the tunneling processes of electric field domains in doped weakly coupled GaAs/AlAs superlattices. Three regimes, i.e, stable field domains, current self-sustained oscillations and averaged field distribution are successively observed with increasing B. The mechanisms of switching-over among these regimes are due to B-induced modification of the dependence of the effective electron drift velocity on electric field. The simulated calculation gives a good agreement with the observed experimental results. (C) 2000 Published by Elsevier Science B.V. All rights reserved.

A novel 1.3-mu m high T-0 AlGaInAs/InP strained-compensated multi-quantum well complex-coupled distributed feedback laser diode

A 1.3-mu m AlGaInAs/InP buried heterostructure (BH) stripe distributed feedback laser with a novel AlInAs/InP complex-coupled grating grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) is proposed and demonstrated. A high characteristic temperature (T-0 = 90K between 20-80 degrees C) and temperature-insensitive slope efficiency (0.25 dB drop from 20 to 80 degrees C) in 1.3 mu m AlGaInAs/InP DFB lasers was obtained by introducing AI(Ga)InAs graded-index separate-confinement heterostructure (GRINSCH) layers and a strained-compensated (SC) multi-quantum well (MQW).

InP-based optoelectronic devices for optical fiber communications

In this contribution we report the research and development of 1.55 mu m InGaAsP/InP gain-coupled DFB laser with an improved injection-carrier induced grating and of high performance 1.3 mu m and 1.55 mu m InGaAsP/InP FP and DFB lasers for communications. Long wavelength strained MQW laser diodes with a very low threshold current (7-10 mA) have been fabricated. Low pressure MOVPE technology has been employed for the preparation of the layered structure. A novel gain-coupled DFB laser structure with an improved injection-carrier modulated grating has been proposed and fabricated. The laser structures have been prepared by hybrid growth of MOVPE and LPE techniques and reasonably good characteristics have been achieved for resultant lasers. High performance 1.3 mu m and 1.55 mu m InGaAsP/InP DFB lasers have successfully been developed for CATV and trunk line optical fiber communication.

Transport property in narrow barrier GaAs/AlAs superlattice under hydrostatic pressure

The current-voltage (I-V) characteristics of a doped weakly coupled GaAs/AlAs superlattice (SL) with narrow barriers are measured under hydrostatic pressure from 1 bar to 13.5 kbar at both 77 and 300 K. The experimental results show that, contrary to the results in SL with wide barriers, the plateau in the I-V curve at 77 K does not shrink with increasing pressure, and becomes wider after 10.5 kbar. It is explained by the fact that the E-Gamma 1-E-Gamma 1 resonance peak is higher than the E-Gamma 1-E-X1 resonance peak. At 300 K, however, because of the more important contribution of the nonresonant component to the current, the plateau shrinks with increasing pressure. (C) 1999 American Institute of Physics. [S0021-8979(99)02008-3].

Tunneling transmission in two quantum wires coupled by a magnetically defined barrier

A numerical analysis of an electron waveguide coupler based on two quantum wires coupled by a magnetically defined barrier is presented with the use of the scattering-matrix method. For different geometry parameters and magnetic fields, tunneling transmission spectrum is obtained as a function of the electron energy. Different from that of conventional electron waveguide couplers, the transmission spectrum of the magnetically coupled quantum wires does not have the symmetry with regard to those geometrically symmetrical ports, It was found that the magnetic field in the coupling region drastically enhances the coupling between the two quantum wires for one specific input port while it weakens the coupling for the other input port. The results can be well understood by the formation of the edge states in the magnetically defined barrier region. Thus, whether these edge states couple or decouple to the electronic propagation modes in the two quantum wires, strongly depend on the relative moving directions of electrons in the propagating mode in the input port and the edge states in the magnetic region. This leads to a big difference in transmission coefficients between two quantum wires when injecting electrons via different input ports. Two important coupler specifications, the directivity and uniformity, are calculated which show that the system we considered behaves as a good quantum directional coupler. (C) 1997 American Institute of Physics.

High speed silicon optical switches based on carrier depletion - art. no. 67812D

The novel design of a silicon optical switch on the mechanism of a reverse p-n junction is proposed. The figuration of contact regions at slab waveguides and the ion implantation technology for creation of junctions are employed in the new design. The two-layer rib structure is helpful for reduction of optical absorption losses induced by metal and heavily-doped contact. And more, simulation results show that the index modulation efficiency of Mach-Zehnder interferometer enhances as the concentrations of dopants in junctions increase, while the trade-off of absorption loss is less than 3 dB/mu m. The phase shift reaches about 5 x 10(-4) pi/mu m at a reverse bias of 10V with the response time of about 0.2ns. The preliminary experimental results are presented. The frequency bandwidth of modulation operation can arrive in the range of GHz. However, heavily-doped contacts have an important effect on pulse response of these switches. While the contact region is not heavily-doped, that means metal electrodes have schottky contacts with p-n junctions, the operation bandwidth of the switch is limited to about 1GHz. For faster response, the heavily-doped contacts must be considered in the design.