Transparent Ni2+-doped silicate glass ceramics for broadband near-infrared emission

Transparent Ni2+-doped MgO-Al2O3-Ga2O3-SiO2-TiO2 glass ceramics were fabricated. The precipitated nanocrystal phase in the glass ceramics was identified by X-ray diffraction and transmission electron microscope. Broadband near-infrared emission centered at 1220 nm with full width at half maximum of about 240 nm and lifetime of about 250 mu s was observed with 980 nm excitation. The longer wavelength emission compared with Ni2+-doped MgAl2O4 crystal was attributed to the low crystal field occupied by Ni2+ in the glass ceramics. The present Ni2+-doped transparent glass ceramics may have potential applications in broadband optical amplifiers. (c) 2007 Elsevier B.V. All rights reserved.

Bismuth-activated luminescent materials for broadband optical amplifier in WDM system

New broadband near infrared luminescence covering the whole work windows (1260-1625 nm) of the current wavelength division multiplexing (WDM) system was found from bismuth-activated M2O-Al2O3-SiO2 (M = Li, Na) and Li2O-Ta2O5-SiO2 glasses at room temperature in the case of 808 nm-laser excitation. But the near infrared luminescence mechanism of the bismuth-activated glasses is not well understood up to now. The figure-of-merits of bandwidth and gain of the glasses are better than those of Er3+-doped silicate glasses and Ti3+ doped sapphire, implying they are the promising gain-medium candidates for the broadband amplifiers and the widely tunable laser sources. (c) 2007 Elsevier B.V. All rights reserved.

Broadband infrared luminescence from bismuth-doped GeS2-Ga2S3 chalcogenide glasses

Near-infrared luminescence is observed from bismuth-doped GeS2-Ga2S3 chalcogenide glasses excited by an 808 nm laser diode. The emission peak with a maximum at about 1260 nm is observed in 80GeS(2)-20Ga(2)S(3):0.5Bi glass and it shifts toward the long wavelength with the addition of Bi gradually. The full width of half maximum (FWHM) is about 200 nm. The broadband infrared luminescence of Bi-doped GeS2-Ga2S3 chalcogenide glasses may be predominantly originated from the low valence state of Bi, such as Bi+. Raman scattering is also conducted to clarify the structure of glasses. These Bi-doped GeS2-Ga2S3 chalcogenide glasses can be applied potentially in novel broadband optical fibre amplifiers and broadly tunable laser in optical communication system.

Infrared (1.2-1.6 mu m) luminescence in Yb, Cr : YAG with 940 nm diode pumping

Infrared (1.2-1.6 mum) luminescence in a yttrium aluminium garnet (YAG) crystal, co-doped with Yb (10 at.%) and Cr (0.05 at.%) ions, was investigated under CW laser diode pumping (lambda = 940 nm). The Cr4+ emission band was observed with its peak at 1.35 mum and measured to be about 6% with respect to Yb3+ IR luminescence (lambda = 1.03 mum). Analysis of the crystal absorption and luminescence spectra allows one to conclude that Yb3+-Cr4+ energy transfer is a mechanism responsible for the B-3(2)(T-3(2))-B-3(1)((3)A(2)) emission of Cr4+ ions. This crystal is promising as an efficient source of the near infrared emission. (C) 2004 Elsevier B.V. All rights reserved.

Infrared (1.2-1.6 mu m) luminescence in Cr4+: Yb3Al5O12 single crystal with 940 nm diode pumping

Infrared (1.2-1.6 mu m) luminescence in a ytterbium aluminium garnet (YbAG) crystal, doped with Cr (0.05 at.%) ions, was investigated under CW laser diode pumping (lambda = 940 nm). The Cr4+ emission band was observed with its peak at 1.34 mu m and measured to be about 1.3 times with respect to Yb3+ IR luminescence (lambda = 1.03 mu m). We demonstrate that for the excitation wavelength of 940 nm Yb3+ ions act as sensitizers of the B-3(2)(T-3(2))-B-3(1)((3)A(2)) emission of Cr4+ ions. This crystal is promising as a high-efficient system for tunable laser (1.2-1.6 mu m) output. (c) 2004 Elsevier B.V. All rights reserved.