139 resultados para Excited states


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Using the technique of stimulated Raman adiabatic passage, we propose schemes for creating arbi- trary coherent superposition states of atoms in four-level systems: a A-type system with twofold final states and a four-level ladder system. With the use of a control field, arbitrary coherent superposition states are created without the condition of multiphoton resonance. Suitable manipulation of detunings and the control field can create either a single state or any superposition states desired. (c) 2005 Pleiades Publishing, Inc.

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Fluorescence spectra of Nd: YVO4 under excitation of a continuous wave (CW) diode laser and a femtosecond laser at 800nm were investigated. It was found that Nd: YVO4 shows different upconversion and downconversion luminescencent behaviors when excited by the diode laser and the femtosecond laser. The dependence of the upconversion luminescence intensity on the pump power of the femtosecond laser was discussed. The populations of the upper energy levels for upconversion and downconversion luminescence were calculated based on the Bloch equations. The calculations agree well with the experimental results. (c) 2007 Optical Society of America.

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We propose an efficient scheme to build an arbitrary multipartite Greenberger-Horne-Zeilinger state and discriminate all the universal Greenberger-Horne-Zeilinger states using parity measurement based on dipole-induced transparency in a cavity-waveguide system. A prominent advantage is that initial entangled states remain after nondetective identification and they can be used for successive tasks. We analyze the performance and possible errors of the required single-qubit rotations and emphasize that the scheme is reliable and can satisfy the current experimental technology.

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In this paper, we present a scheme for implementing the unconventional geometric two-qubit phase gate with nonzero dynamical phase based on two-channel Raman interaction of two atoms in a cavity. We show that the dynamical phase and the total phase for a cyclic evolution are proportional to the geometric phase in the same cyclic evolution; hence they possess the same geometric features as does the geometric phase. In our scheme, the atomic excited state is adiabatically eliminated, and the operation of the proposed logic gate involves only the metastable states of the atoms; thus the effect of the atomic spontaneous emission can be neglected. The influence of the cavity decay on our scheme is examined. It is found that the relations regarding the dynamical phase, the total phase, and the geometric phase in the ideal situation are still valid in the case of weak cavity decay. Feasibility and the effect of the phase fluctuations of the driving laser fields are also discussed.

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We investigate the fluorescence spectrum in a nearly degenerate atomic system of a F-e = 0 -> F-g = 1 transition by analytically solving Schrodinger equations. An ultranarrow fluorescence spectral line in between the two coherent population trapping windows has been found. Our analytic solutions clearly show the origin of the ultranarrow spectral line. Due to quantum interference effects between two coherent population trapping states, the width and intensity of the central spectral line can be controlled by an external magnetic field. Such an effect may be used to detect a magnetic field.

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Two basic types of depolarization mechanisms, carrier-carrier (CC) and carrier-phonon (CP) scattering, are investigated in optically excited bulk semiconductors (3D), in which the existence of the transverse relaxation time is proven based on the vector property of the interband transition matrix elements. The dephasing rates for both CC and CP scattering are determined to be equal to one half of the total scattering-rate-integrals weighted by the factors (1 - cos chi), where chi are the scattering angles. Analytical expressions of the polarization dephasing due to CC scattering are established by using an uncertainty broadening approach, and analytical ones due to both the polar optical-phonon and non-polar deformation potential scattering (including inter-valley scattering) are also presented by using the sharp spectral functions in the dephasing rate calculations. These formulas, which reveal the trivial role of the Coulomb screening effect in the depolarization processes, are used to explain the experimental results at hand and provide a clear physical picture that is difficult to extract from numerical treatments.

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The origin of the transverse relaxation time in optically excited semiconductor quantum wells is investigated based on the vector property of the interband transition matrix elements. The dephasing rate due to carrier-carrier (CC) scattering is found to be equal to half of the common momentum relaxation rate. The analytical expression of the polarization dephasing due to CC scattering in two-dimension is established and the dependence of the dephasing rate Gamma(cc) on the carrier density N is determined to be Gamma(cc) = constant (.) N-1/2, which is used to explain the experimental results and provides a promising physical picture. (C) 2004 Elsevier B.V. All rights reserved.

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The diffraction properties of volume holographic gratings are studied when the gratings are illuminated by an ultrashort pulsed beam with different polarization states. The developed coupled wave theory of Kogelnik is used. Considering the dispersion effect of the grating media, solutions for the diffracted and transmitted intensities, diffraction efficiencies and the bandwidths of the gratings are given in transmission volume holographic gratings and reflection volume holographic gratings. The bandwidths of the gratings are reduced by the dispersion effect of the grating media. They also have different influences on the diffraction of an ultrashort pulsed beam with different polarization states. For different values of the ratio of the spectral bandwidth of the input pulse to that of the grating, the changes of the spectral and temporal distributions of the diffracted intensities, as well as the diffraction efficiencies of the gratings are shown.

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Intense Tm3+ blue upconversion emission has been observed in Tm3+-Yb3+ codoped oxyfluoride tellurite glass under excitation with a diode laser at 976 nm. Three emission bands centered at 475, 650 and 796 nm corresponding to the transitions (1)G(4) -> H-3(6), (1)G(4) -> H-3(4) and F-3(4) -> H-3(6), respectively, simultaneously occur. The dependence of upconversion intensities on Tm3+ ions concentration and excitation power are investigated. For fixed Yb2O3 concentrations of 5.0 mol%, the maximum upconversion intensity was obtained with Tm2O3 concentration of about 0.1 mol%. The blue upconversion luminescence lifetimes of the Tm3+ transitions (1)G(4) -> H-3(6) are measured. The results are evaluated by the possible upconversion mechanisms.

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Fluorophosphate glasses codoped with Tm3+ and Yb3+ were prepared and their thermal stability, phonon states, and upconversion properties were studied. It is found that the increment of phosphate content is good for the thermal stability but increases the phonon density of states. However, the phonon density of states of these fluorophosphate glasses is very low due to the low phosphate content in their composition. The upconversion luminescence spectra were measured under excitation of 970 nm laser diode, and the intense blue (476 nm) and near infrared (794 nm) emission were simultaneous obtained at room temperature. The sensitizing mechanisms of Yb3+ to Tm3+ for blue and red emission contain both sequential and cooperative sensitization. The near infrared emission is a two-photon upconversion process. These researches suggest that when the phosphate content in the composition is low enough, fluorophosphate glass can be suitable host material of Tm3+ codoped with Yb3+ for blue and near infrared upconversion luminescence. (c) 2005 Elsevier B.V All rights reserved.

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Absorption and luminescence spectra and optical amplification in bismuth-doped germanate silicate glass were investigated. Two kinds of bismuth ion valence states could exist in the glass. One is Bi2+, which has shown red luminescence, another might be Bi+, which is the active center for infrared luminescence. The infrared luminescence excited at 700, 800, and 980 nm should be ascribed to the electronic transition P-3(1) --> P-3(0) of Bi+ ions in three distinct sites. The shifting, broadening, and multiple configuration of the luminescence could be due to the randomly disorder of local environment and multiple sites of the active centers. In this glass, obvious optical amplification was realized at 1300 nm wavelength when excited at 808 and 980 nm, respectively.