Ex situ conservation status of an endangered Yangtze finless porpoise population (Neophocaena phocaenoides asiaeorientalis) as measured from microsatellites and mtDNA diversity

The Yangtze finless porpoise, Neophocaena phocaenoides asiaeorientalis, is all endangered small cetacean that occurs only in the middle and lower reaches of the Yangtze River of China. The establishment of a breeding population of the porpoise in Tian-e-Zhou Baiji National Natural Reserve represents the first attempt at ex situ conservation efforts for a cetacean species. With the goal of effective protection, management, and monitoring of this preserved population, we examined its genetic diversity using 930 bp of mtDNA control region sequences and 13 polymorphic microsatellite loci. A very low level of genetic variation (h = 0.6010 +/- 0.0029 s.d.; pi = 0.0007 +/- 0.0000002 s.d.) in the mtDNA control region sequences and a moderate genetic diversity (Ho = 0.5740 +/- 0.2575 s.d.) in the microsatellites were detected in the population. It is necessary to introduce more individuals with representative genetic variations into the reserve ill order to foml a larger and healthier group structure for long-term survival of the population. Successful establishment of the Yangtze finless porpoise population in the Reserve also provides a useful model for an ex situ conservation programme for other rare and endangered species. (c) 2005 International Council for the Exploration ofthe Sea. Published by Elsevier Ltd. All rights reserved.

Karyotypic diversity in polyploid gibel carp, Carassius auratus gibelio Bloch

Polyploid gibel carp, Carassius auratus gibelio, is an excellent model system for evolutionary genetics owing to its specific genetic background and reproductive modes. Comparative karyotype studies were performed in three cultured clones, one artificially manipulated group, and one mated group between two clones. Both the clones A and P had 156 chromosomes in their karyotypes, with 36 metacentric, 54 submetacentric, 36 subtelocentric, 24 acrocentric, and six small chromosomes. The karyotype of clone D contained 162 chromosomes, with 42 metacentric, 54 submetacentric, 36 subtelocentric, 24 acrocentric, and six small chromosomes. All the three clones had six small chromosomes in common. Group G, being originated from the clone D by artificial manipulation, showed supernumerary microchromosomes or chromosomal fragments, in addition to the normal chromosome complement that was identical to the clone D. The offspring from mating between clones D and A had 159 chromosomes. Comparing with the clone A, the DA offspring showed three extra metacentric chromosomes. In addition, variable RAPD fingerprint patterns and unusual SCAR marker inheritance were, respectively, detected among individuals of artificial group G and in the mated DA offspring. Both the chromosome and molecular findings suggest that genome reshuffling might have occurred by manipulation or mating of the clones.

Genetic diversity among different clones of the gynogenetic silver crucian carp, Carassius auratus gibelio, revealed by transferrin and isozyme markers

Genetic diversity among four clones (A, D, E, F) of gynogenetic silver crucian carp was studied using transferrin and isozymes in the blood as markers. Of the five proteins investigated, three (transferrin, esterase and superoxide dismutase) indicated polymorphism and eight polymorphic loci were detected. These loci were probably encoded by codominant alleles and their inheritance patterns were analyzed. Intraclonal homogeneity and interclonal heterogeneity were observed in these clones, which allowed us to infer the clonal nature and evolutionary relationship between them. Clonal diversity in this population of silver crucian carp in China was also compared with data reported from gynogenetic crucian carp in Germany.

Diversity of intestinal helminth communities of carp from six lakes in the flood plain of the Yangtze river, China

The infra- and component communities of intestinal helminths of carp Cyprinus carpio were investigated in six lakes in the flood plain of the lower and middle reaches of the Yangtze River, China. Eight species of helminth parasites were recorded. The intestinal helminth communities were species rich in Niushan and Tonghu lakes where the digenean Asymphylodora japonica was the dominant species, whereas in Qinggang and Yanglan lakes a species-poor helminth community had only one species, Khawia sinensis. The degree of similarity within localities was highest in Qinggang and Yanglan lakes, and was high between communities where K. sinensis was the dominant species. The rich composition of these helminth communities may be because China is the heartland for carp while the poor helminth composition of those in Qinggang and Yanglan lakes may reflect the poor fauna there. It is suggested that species compositions of intestinal helminth communities of carp may be diversified in lakes in the hood plain of the Yangtze River. (C) 1999 The Fisheries Society of the British Isles.

Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si(111) wafer

Polycrystalline GaN thin films have been deposited epitaxially on a ZnO-buffered (111)-oriented Si substrate by molecular beam epitaxy. The microstructural and compositional characteristics of the films were studied by analytical transmission electron microscopy (TEM). A SiO2 amorphous layer about 3.5 nm in thickness between the Si/ZnO interface has been identified by means of spatially resolved electron energy loss spectroscopy. Cross-sectional and plan-view TEM investigations reveal (GaN/ZnO/SiO2/Si) layers exhibiting definite a crystallographic relationship: [111](Si)//[111](ZnO)//[0001](GaN) along the epitaxy direction. GaN films are polycrystalline with nanoscale grains (similar to100 nm in size) grown along [0001] direction with about 20degrees between the (1 (1) over bar 00) planes of adjacent grains. A three-dimensional growth mode for the buffer layer and the film is proposed to explain the formation of the as-grown polycrystalline GaN films and the functionality of the buffer layer. (C) 2004 Elsevier Ltd. All rights reserved.

Alloy compositional fluctuation in InAlGaN epitaxial films

The quaternary InAlGaN films were grown by metal-organic vapor phase epitaxy (MOVPE) at various temperatures and the optical and structural properties of the quaternary films were investigated by temperature-dependent photoluminescence (PL), high-resolution X-ray diffraction (HRXRD) and high-resolution electron microscopy (HREM). The results show that the temperature-dependent PL intensity of the InAlGaN film is similar to that of the disordered alloys, which is thought to be due to local alloy compositional fluctuations (ACF) in the epilayer. HRXRD measurement reveals there are In-rich and In-poor phases in the film and HREM observation, on the other hand, demonstrates that nanoclusters formed in the epilayer. Therefore the experimental results support the existence of ACF in the epilayers.

Al compositional inhomogeneity of AlGaN epilayer with a high Al composition grown by metal-organic chemical vapour deposition

The A1 compositional distribution of A1GaN is investigated by cathodoluminescence (CL). Monochromatic CL images and CL spectra reveal a lateral A1 compositional inhomogeneity, which corresponds to surface hexagonal patterns. Cross-sectional CL images show a relatively uniform Al compositional distribution in the growth direction, indicating columnar growth mode of A1GaN films. In addition, a thin A1GaN layer with lower Al composition is grown on top of the buffer A1N layer near the bottom of the A1GaN epilayer because of the larger lateral mobility of Ga adatoms on the growth surface and their accumulation at the grain boundaries.

Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si(111) wafer

Polycrystalline GaN thin films have been deposited epitaxially on a ZnO-buffered (111)-oriented Si substrate by molecular beam epitaxy. The microstructural and compositional characteristics of the films were studied by analytical transmission electron microscopy (TEM). A SiO2 amorphous layer about 3.5 nm in thickness between the Si/ZnO interface has been identified by means of spatially resolved electron energy loss spectroscopy. Cross-sectional and plan-view TEM investigations reveal (GaN/ZnO/SiO2/Si) layers exhibiting definite a crystallographic relationship: [111](Si)//[111](ZnO)//[0001](GaN) along the epitaxy direction. GaN films are polycrystalline with nanoscale grains (similar to100 nm in size) grown along [0001] direction with about 20degrees between the (1 (1) over bar 00) planes of adjacent grains. A three-dimensional growth mode for the buffer layer and the film is proposed to explain the formation of the as-grown polycrystalline GaN films and the functionality of the buffer layer. (C) 2004 Elsevier Ltd. All rights reserved.