Phi 140 mm sapphire crystal growth by temperature gradient techniques and its color centers

Sapphire crystals, 140 mm in diameter and 90 turn in height, have been grown by temperature gradient techniques (TGT). The growth direction of the boule was fixed by means of Lane X-ray diffraction. A prominent 204 nm absorption band in TGT-Al2O3. which does not appear in single crystals grown by Czochralski method has been studied. Analysis further substantiates the F-center model of this band. Two relatively weaker bands absorbing at 232 nm and 254 nm were ascribed to F+ centers. F-type centers concentration was determined using Smakula's equation. (c) 2005 Elsevier B.V. All rights reserved.

Color centers in Yb : YAG crystals grown by temperature-gradient techniques

Yb: YAG (Yb: Y3Al5O12) crystals have been grown by temperature-gradient techniques (TGT) and their color centers and impurity defects were investigated by means of gamma irradiations and thermal treatment. Two color centers located at 255 and 290 nm were observed in the as-grown TGT-Yb: YAG. Analysis shows that the 255 nm band may be associated with Fe3+ ions. Absorption intensity changes of the 290 nm band after gamma irradiation and thermal treatment indicate that this band may be associated with oxygen-vacancy defects. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Optimization of thermal environment during crystal growth of large-sized Nd : YAG by Temperature Gradient Technique

A finite-element model is employed to analysis the thermal environments in Temperature Gradient Technique (TGT) furnace during the growth of large-sized Nd:YAG crystal. The obtained results show that when the crucible is located at the lower position inside of the heater, a flatter solid-liquid interface is established, which makes it easier to obtain the core-free Nd:YAG crystal. Meanwhile, the lower crucible position can induce higher axial temperature gradient, which is beneficial to the release of latent heat. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Spectroscopic properties of Ce : YAP scintillation crystal grown by temperature gradient technique

Spectroscopic properties of Ce-doped yttrium orthoaluminate (Ce:YAlO3 or Ce:YAP) crystals grown by temperature gradient technique (TGT) were investigated, and the effects of the growth conditions on the properties were analyzed.. Methods of optical absorption (OA), photoluminescence (PL), photoluminescence decay (PLD), X-ray excited luminescence (XL) and cathodeluminescence (CL) were used in these investigations. The results showed that the absorption band peak at 202, 394 and 532 nm originated from F and F+ color center induced by the weak reducing growth atmosphere, green emission band near 500 ran derived from Ce3+ -Ce3+ pairs and band at 650 similar to 850 run from some unintentional impurity in crystals.

导模法和温度梯度法生长r面蓝宝石(英文)

r面(0112)蓝宝石晶体可用作制备非极性GaN薄膜的衬底。采用温度梯度法(temperature gradient technique,TGT)和导模法(edge-defined film-fed crystal growth,EFG)生长了质量良好的r面蓝宝石晶体。利用双晶衍射、光学显微镜、光谱仪观察和分析了晶体的结构和缺陷。结果表明:TGT法生长的r蓝宝石晶体的双晶摇摆曲线对称性好,半高宽值仅为18 rad.s,位错密度为4×103 cm-2,透过率达83%,晶体质量好。与TGT法相比,EFG法生长的r面蓝宝石晶体的结构完整性较差,位错密度为5×105 cm-2,透过率仅为75%。但是EFG法具有晶体生长速度快,后期加工成本低的优点。

Growth of highly sensitive thermoluminescent crystal alpha-Al2O3 : C by the temperature gradient technique

In this work, an alpha-Al2O3:C crystal with highly sensitive thermoluminescence was directly grown by the temperature gradient technique (TGT) using Al2O3 and graphite powders as raw materials. The optical and luminescent properties and the dosimetric characteristics of the crystal were investigated. An as-grown alpha-Al2O3:C crystal shows a single glow peak at 462 K and a blue emission peak at 415 nm. The thermoluminescence (TL) response of the crystal shows a linear-sublinear-saturation characteristic. In the dose range from 5 x 10(-6) to 10Gy, the alpha-Al2O3:C crystal shows excellent linearity, and saturation was observed at about 30Gy. The sensitivity of the crystal decreases as the heating rate increases. (c) 2008 Elsevier B.V. All rights reserved.

Studies of magnetic interactions in Mn-doped β-Ga2O3 from first-principles calculations

The magnetic behavior of Mn-doped beta-Ga2O3 is Studied from first-principles calculations within the generalized gradient approximation method. Calculations show that ferromagnetic ordering is always favorable for configurations in which two Mn ions substitute either tetrahedral or octahedral sites, and the ferromagnetic ground state is also sometimes favorable for configurations where one Mn ion substitutes a tetrahedral site and another Mn ion substitutes an octahedral site. However, the configurations of the latter case are less stable than those of the former. (c) 2008 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

A New theory for evaluating the number density of inclusions in films

A new formulation derived from thermal characters of inclusions and host films for estimating laser induced damage threshold has been deduced. This formulation is applicable for dielectric films when they are irradiated by laser beam with pulse width longer than tens picoseconds. This formulation can interpret the relationship between pulse-width and damage threshold energy density of laser pulse obtained experimentally. Using this formulation, we can analyze which kind of inclusion is the most harmful inclusion. Combining it with fractal distribution of inclusions, we have obtained an equation which describes relationship between number density of inclusions and damage probability. Using this equation, according to damage probability and corresponding laser energy density, we can evaluate the number density and distribution in size dimension of the most harmful inclusions. (c) 2005 Elsevier B.V. All rights reserved.

Effects of oxygen partial pressure on packing density and laser damage threshold of TiO2 thin films

TiO2 films are deposited by electron beam evaporation as a function of oxygen partial pressure. The packing density, refractive index, and extinction coefficient all decrease with the increase of pressure, which also induces the change of the film's microstructure, such as the increase of voids and H2O concentration in the film. The laser-induced damage threshold (LIDT) of the film increases monotonically with the rise of pressure in this experiment. The porous structure and low nonstoichiometric defects absorption contribute to the film's high LIDT. The films prepared at the lowest and the highest pressure show nonstoichiometric and surface-defects-induced damage features, respectively.(C) 2007 American Institute of Physics.