151 resultados para Amorphous Semiconductors


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New carbazole-based copolymers, which contain various concentrations of 9-alkyl-3, 6-carbazole fragments in the main chain connected via alkylene spacers, have been synthesized by Ni(0)-catalyzed Yamamoto-type aryl-aryl coupling reactions. Full characterization of the copolymer structure by NMR spectroscopy and elemental analysis is presented. These compounds represent amorphous materials of high thermal stability with glass transition temperatures of 151-162 degrees C and thermal decomposition starting at temperatures > 390 degrees C. UV-Vis absorption and photoluminescence emission of the copolymers confirmed that the effectively conjugated segment in the 3,6-linked carbazole-type copolymers is limited to dyads (dimeric units). However, copolymers with varying concentrations of the oligocarbazole chromophores demonstrate different charge injection and transport properties in multilayer light-emitting diodes with the copolymers as the hole transport and Alq(3) as the electroluminescent/electron transport layer. The device based on a copolymer composed of oligocarbazole blocks with an average length of around four carbazoles exhibited the best overall performance with a turn-on voltage of 3.5 V, a maximal photometric efficiency of 4.1 cd center dot A(-1) and maximum brightness of about 4 200 cd center dot m(-2).

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Ti45Zr35Ni17Cu3 amorphous and icosahedral quasicrystal line (I-phase) powders were synthesized by mechanical alloying (MA) and subsequent annealing, the phase structure and hydrogen absorption properties of two powders were investigated. XRD analysis indicated that the MAed powder was an amorphous phase and annealed powder was an I-phase. Two alloy exhibited excellent hydrogen adsorption property and started to absorb hydrogen without induction time. PCT measurement showed that the plateau pressure of the amorphous powders was obviously higher than that of the I-phase powders. After the first hydrogen cycling, the partial amorphous phase changed to (Zr, Ti)H-2 phases, and the I-phase was steady. Similar hydride phases Ti2ZrH4 and (Zr, Ti)H-2 were also formed after the second hydrogen cycling for the amorphous and I-phase alloy powders.

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Two series of oligothiophenes (OThs), NaTn and TNTn (n = 2-6 represents the number of thiophene rings), end-capped with naphthyl and thionaphthyl units have been synthesized by means of Stille coupling. Their thermal properties, optical properties, single crystal structures, and organic field-effect transistor performance have been characterized. All oligomers display great thermal stability and crystallinity. ne crystallographic structures of NaT2, NaT3, TNT2, and TNT3 have been determined. The crystals of NaT2 and NaT3 are monoclinic with space group P2(1)/C, while those of TNT2 and TNT3 are triclinic and orthorhombic with space groups P-1(-) and P2(1)2(1)2(1), respectively. All oligomers adopt the well-known herringbone packing-mode in crystals with packing parameters dependent on the structure of the end-capping units and the number of thiophene rings. The shorter intermolecular distance in NaT3 compared to NaT2 indicates that the intermolecular interaction principally increases with increasing molecular length. X-ray diffraction and atomic force microscopy (AFM) characterization indicate that the NaTn oligomers can form films with better morphology and high molecular order than TNTn oligomers with the same number of thiophene rings. The NaTn oligomers exhibit mobilities that are much higher than those for TNTn oligomers (0.028-0.39 cm(2) V-1 s(-1) versus 0.010-0.055 cm(2) V-1 s(-1), respectively).

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Thin films of phthalocyanine compounds show weak epitaxial growth on a monodomain film of a rod-like molecule (see figure). The resulting organic electronic devices exhibit high charge carrier mobilities close to those of the single-crystal devices.

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Hole mobility in a copper-phthalocyanine (CuPc)-based top-contact transistor has been studied with various organic layer thicknesses. It is found that the transistor performance depends on the thickness of the CuPc layer, and the mobility increases with the increase in the CuPc layer and saturated at the thickness of 6 ML. The upper layers do not actively contribute to the carrier transport in the organic films. The morphology of the organic layer grown on the bare SiO2/Si substrate is also presented. The analysis of spatial correlations shows that the CuPc films grow on the SiO2 according to the mixed-layer mode.

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Pure metal powder mixtures of W and Mg at the desired composition were milled in conventional high-energy ball mill, and amorphous alloy W50Mg50 was obtained after milling for 20 h. The structure evolution of elemental powder mixtures was studied following milling and subsequent high pressure and high temperature treatment. The amorphous alloy transform into a nanocrystalline material below 1050 degreesC at 4.0 GPa. On increasing the temperature, it transforms into a mixture of several new crystal phases under high-pressure condition. It also found that both mechanical alloying and high pressure treatment are the two necessary processes to form the nanocrystalline and the new phases.

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Three fully amorphous comb-branch polymers based on poly(styrene-co-maleic anhydride) as a backbone and poly(ethylene glycol) methyl ether of different molecular weights as side chains were synthesized. SiO2 nanoparticles of various contents and the salt LiCF3SO3 were added to these comb-branch polymers to obtain nanocomposite polymer electrolytes. The thermal and transport properties of the samples have been characterized. The maximum conductivity of 2.8x10(-4) S cm(-1) is obtained at 28 degreesC. In the system the longer side chain of the comb-branch polymer electrolyte increases in ionic conductivity after the addition of nanoparticles. To account for the role of the ceramic fillers in the nanocomposite polymer electrolyte, a model based on a fully amorphous comb-branch polymer matrix in enhancing transport properties of Li+ ions is proposed.

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Two novel phenanthrene-based conjugated oligomers were synthesized and used as p-channel semiconductors in field-effect transistors; they exhibit high mobility and excellent stability during long-time ambient storage and under UV irradiation.

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Ti45Zr35Ni17Cu3 amorphous and single icosahedral quasicrystalline powders were synthesized by mechanical alloying and subsequent annealing at 855 K. Microstructure and electrochemical properties of two alloy electrodes were characterized. When the temperature was enhanced from 303 to 343 K, the maximum discharge capacities increased from 86 to 329 mAh g(-1) and 76 to 312 mAh g(-1) for the amorphous and quasicrystalline alloy electrodes, respectively. Discharge capacities of two electrodes decrease distinctly with increasing cycle number. The I-phase is stable during charge/discharge cycles, and the main factors for its discharge capacity loss are the increase of the charge-transfer resistance and the pulverization of alloy particles. Besides the factors mentioned above, the formation of TiH2 and ZrH2 hydrides is another primary reason for the discharge capacity loss of the amorphous alloy electrode.

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HigWy efficient DCJTB-doped device was realized by enhanced electron injection and exciton confinement. A fluorine end-capped linear phenylene/oxadiazole oligomer 2,5-bis(4-fluorobiphenyl-4'-yl)-1,3,4-oxadiazole (1) and a trifluoromethyl end-capped oligomer 2,5-bis(4-trifluoromethylbiphenyl-4'-yl)-1,3,4-oxadiazole (2) were designed and incorporated as an electron transporting/hole blocking material in the device structure ITO/NPB (60 mn)/DCJTB:Alq(3) (0.5%, 10 nm)/1 or 2 (20 nm)/Alq(3) (30 mn)/LiF (1 nm)/Al (100 nm). The devices showed highly efficient red luminescence. In particular, the device based on 1 achieved pure red luminescence at 620 run originating from DCJTB, with a narrow FWHI of 65 nm, maximal brightness of 13,300 cd/m(2) at voltage of 20.8 V and current density of ca. 355 mA/cm(2). High current and power efficiencies (> 3.6 cd/A. 1.01m/W) were retained within a wide range of current densities. Our results show efficient and stable DCJTB-doped red electroluminescence could be anticipated for practical applications by taking advantage of the present approaches. The control experiments using BCP were also studied.

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Monodisperse carbazole-based oligomers have been synthesized via C-N bonds formation by the modified Ullmann reaction. The full characterization of their structure is presented. These derivatives are highly thermally stable amorphous compounds with glass transition temperatures of 167-171 degrees C and thermal decomposition temperatures of ca. 400 degrees C. Amorphous films of the materials were fabricated and their hole-transporting properties were tested in a light emitting device with Alq(3) as an electroluminescent and electron-transporting material.

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Multiple melting behavior was observed in the differential scanning calorimetry (DSC) scans for the isothermally crystallized poly(iminosebacoyl iminodecamethylene) (PA1010) samples. Coexistence of crystal populations with different lamellar thickness in PA1010 was discussed by means of DSC, wide-angle X-ray diffraction (WAXD), and small-angle X-ray scattering techniques. During crystallization of the polymer, a major lamellar crystal population developed first, which possessed a higher melting temperature. However, a small fraction of the polymer formed minor crystal population with thinner lamellae, which was metastable and, upon post-annealing, could grow into more stable and thicker lamellae through melting and recrystallization process. Lamellae insertion or stacks would develop during the post-annealing at a lower temperature for the isothermally crystallized samples; thus, multiple crystal populations with different thickness could be produced. It is the multiple distribution of lamella thickness that gives rise to multiple melting behavior of crystalline polymers. (C) 2000 John Wiley & Sons, Inc.

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Nanopowders of amorphous silicon nitride were densified and sintered without additives under ultrahigh pressure (1.0-5.0 GPa) between room temperature and 1600 degrees C. The powders had a mean diameter of 18 nm and contained similar to 5.0 wt% oxygen that came from air-exposure oxidation, Sintering results at different temperatures were characterized in terms of sintering density, hardness, phase structure, and grain size. It was observed that the nanopowders can be pressed to a high density (87%) even at room temperature under the high pressure. Bulk Si3N4 amorphous and crystalline ceramics (relative density: 95-98%) were obtained at temperatures slightly below the onset of crystallization (1000-1100 degrees C and above 1420 degrees C, respectively. Rapid grain growth occurred during the crystallization leading to a grain size (>160 nm) almost 1 order of magnitude greater than the starting particulate diameters, With the rise of sintering temperature, a final density was reached between 1350 and 1420 degrees C, which seemed to be independent of the pressure applied (1.0-5.0 GPa), The densification temperature observed under the high pressure is lower by 580 degrees C than that by hot isostatic pressing sintering, suggesting a significantly enhanced low-temperature sintering of the nanopowders under a high external pressure.

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A novel morphology of TPBD crystals consisting of a three-dimensional interlaced network was obtained by casting the self-seeded 0.1% benzene solution onto carbon-boated mica. Both the transmission electron microscopy (TEM) and electron diffraction (ED) analyses showed that the network was composed of well-developed lamellae. It is imagined this interesting morphology is the results of asymmetrical growth of the original TPBD lamellae on the amorphous interface, and that their preferred orientation changed when they encountered each other.

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The crystallization and phase transformation of amorphous Si3N4 ceramics under high pressure (1.0-5.0 GPa) between 800 and 1700 degreesC were investigated. A greatly enhanced crystallization and alpha-beta transformation of the amorphous Si3N4 ceramics were evident under the high pressure, as characterized by that, at 5.0 GPa, the amorphous Si3N4, began to crystallize at a temperature as low as 1000 degreesC (to transform to alpha modification). The subsequent alpha-beta transformation occurred completed between 1350 and 1420 degreesC after only 20 min of pressing at 5.0 GPa. In contrast, under 0.1 MPa N-2, the identical amorphous materials were stable up to 1400 degreesC without detectable crystallization, and only a small amount of a phase was detected at 1500 degreesC. The crystallization temperature and the alpha-beta transformation temperatures are reduced by 200-350 degreesC compared to that at normal pressure. The enhanced phase transformations of the amorphous Si3N4, were discussed on the basis of thermodynamic and kinetic consideration of the effects of pressure on nucleation and growth.