Optical properties of InGaAs quantum dots formed on InAlAs wetting layer

We have fabricated a new self-assembled quantum dot system where InGaAs dots are formed on InAlAs wetting layer and embedded in GaAs matrix. The low-temperature photoluminescence and atomic force microscopy measurements confirm the realization of the structure. In contrast to traditional InAs/Ga(Al)As quantum dots, the temperature dependence of the photoluminescence of the dots in such a structure exhibits an electronically decoupled feature due to a higher energy level of the wetting layer which keeps the dots more isolated from each other. (C) 2001 Published by Elsevier Science B.V.

InAs self-assembled nanostructures grown on InP(001)

The 6-period stacked layers of self-assembled InAs quasi-quantum wires(qQWRs) and quantum dots(QDs) embedded into InAlAs on InP(001) substrates have been prepared by solid molecular beam epitaxy. The structures are characterized by atomic force microscopy(AFM) and transmission electron microscopy(TEM). From AFM we have observed for the first time that InAs qQWRs and QDs coexist, and we explained this phenomenon from the view of the energy related to the islands. Cross-sectional TEM shows that InAs qQWRs are vertically aligned every other layer along the growth direction [001], which disagrees with conventional vertical self-alignment of InAs QDs on GaAs substrate.

Absorption spectra of nanocrystalline silicon embedded in SiO2 matrix

Nanocrystalline silicon (nc-Si) embedded SiO2 matrix has been formed by annealing the SiOx films fabricated by plasma-enhanced chemical vapor deposition (PECVD) technique. Absorption coefficient and photoluminescence of the films have been measured at room temperature. The experimental results show that there is an "aUrbach-like" b exponential absorption in the spectral range of 2.0-3.0 eV. The relationship of (alpha hv)(1/2) proportional to(hv - E-g) demonstrates that the luminescent nc-Si have an indirect band structure. The existence of Stokes shift between photoluminescence and absorption edge indicates that radiative combination can take place not only between electron states and hole states but also between shallow trap states of electrons and holes. (C) 2000 Elsevier Science B.V. All rights reserved.

Theoretical and Experimental Studies of an Ultra-compact Photonic Crystal Corner Mirror Based on Silicon-On-Insulator

An ultra-compact silicon-on-insulator based photonic crystal corner mirror is designed and optimized. A sample is then successfully fabricated with extra losses 1.1 +/- 0.4dB for transverse-electronic (M) polarization for wavelength range of 1510-1630nm.

密码Hash函数相关问题研究

密码Hash函数是信息安全密码学的一个重要研究内容，是一类广泛应用的密码算法，用于把任意长度的字符串压缩成特定长度的字符串，同时需要在各种应用环境下满足一定的安全要求如抗碰撞，抗原象等。Hash函数广泛应用于数字签名、可证明安全、密码算法的构造以及重要的安全协议中。对Hash函数进行研究、分析Hash函数的安全性、构造安全高效的Hash算法有着重要意义。 本文研究了Hash函数的安全性质、设计结构以及常用分析方法，研究了Hash函数扩散层部件的设计，并且对MAME压缩函数算法进行了分析，取得了如下研究结果： (1) 研究了密码Hash函数的安全性质、设计结构、设计原理和常用分析方法，归纳总结了51个SHA-3候选算法的设计特点、设计原理和实现效率，研究了最新的分析进展，总结了新的攻击方法如REBOUND攻击等。NIST仿照AES的征集过程的SHA-3竞赛，目标是选出新的Hash函数标准SHA-3。进入第一轮的候选算法有51个，经过筛选选出其中的14个作为当前第二轮的候选算法。这些新Hash算法是由世界各国密码学家精心设计，是Hash函数领域最新设计思想的集体展示，当中涌现出很多新的设计结构和设计方法，同时激励密码学家发展新的分析方法。 (2) 设计并实现了了有限域上的扩散层构造算法以及扩散层分支数测试的算法，并针对多元域上的扩散层矩阵，本文使用编码理论，利用GRS码和柯西矩阵等设计了多元域扩散层矩阵的构造算法；使用有限域上的高斯消元法和线性码的性质设计了多元域扩散层矩阵的分支数的检测；设计了高效的二元域扩散层矩阵分支数测试算法。 (3) 针对MAME压缩函数算法进行差分分析，MAME算法是SHA-3候选算法Lesamnta的前身，于CHES 2007上提出的面向硬件有效实现的Hash算法。本文利用差分攻击对MAME算法进行分析，首先针对MAME的结构性质利用对通用Feistel结构的攻击方法构造了22轮差分攻击，碰撞攻击的复杂度为2^97，（第二）原象攻击的复杂度为2^197；对23轮的差分攻击需要的预计算是2^64张表，每张表的大小为2^64；对24轮的差分攻击需要的预计算是2^128张表，每张表的大小为2^64。针对24轮差分攻击很大的内存复杂度，我们利用了算法的细节特性，改进了差分攻击，新的差分不需要预计算的辅助内存，（第二）原象的复杂度为2^224。

Methane hydrate growth velocity in seepage system of Qiongdongnan Basin, South China Sea

The occurrences of diapirs, gas-filled zones and gas plumes in seawater in Qiongdongnan Basin of South China Sea indicate that there may exist seepage system gas-hydrate reservoirs. Assuming there has a methane venting zone of 1500 m in diameter, and the methane flux is 1000 kmol/a, and the temperature of methane hydrate-bearing sediments ranges from 3 degrees C to 20 degrees C, then according to the hydrate film growth theory, by numerical simulation, this paper computes the temperatures and velocities in 0 mbsf, 100 mbsf, 200 mbsf, 425 mbsf over discrete length, and gives the change charts. The results show that the cementation velocity in sediments matrix of methane hydrate is about 0.2 nm/s, and the seepage system will evolve into diffusion system over probably 35000 years. Meanwhile, the methane hydrate growth velocity in leakage system is 20 similar to 40 times faster than in diffusion system.