Didodecyldimethylammonium bromide lipid bilayer-protected gold nanoparticles: Synthesis, characterization, and self-assembly

Didodecyldimethylammonium bromide (DDAB) lipid bilayer-protected gold nanoparticles (AuNPs), which were stable and hydrophilic, were synthesized by in situ reduction of HAuCl4 with NaBH4 in an aqueous medium in the presence of DDAB. As-prepared nanoparticles were characterized by UV-vis spectra, transmission electron microscopy, dynamic light scattering analysis, and X-ray photoelectron spectroscopy. All these data supported the formation of AuNPs. Fourier transform infrared spectroscopy (FTIR) and differential thermal analysis/thermogravimetric analysis data revealed that DDAB existed in a bilayer structure formed on the particle surface, resulting in a positively charged particle surface. The FTIR spectra also indicated that the DDAB bilayer coated on the surface of AuNPs was probably in the ordered gel phase with some end-gauche defects. On the basis of electrostatic interactions between such AuNPs and anionic polyelectrolyte poly(sodium 4-styrenesulfonate) (PSS), we successfully fabricated (PSS/AuNP)(n) multilayers on a cationic polyelectrolyte poly(ethylenimine) coated indium tin oxide substrate via the layer-by-layer self-assembly technique and characterized as-formed multilayers with UV-vis spectra and atomic force microscopy.

Phenylene vinylene-based electroluminescent polymers with electron transport block in the main chain

We report a new route for the design of soluble phenylene vinylene (PV) based electroluminescent polymers bearing electron-deficient oxadizole (OXD) and triazole (TZ) moieties in the main chains with the aryloxy linkage. Both series of the PV-based polymers were prepared by Wittig reaction. By properly adjusting the OXD and/or TZ content through copolymerization, we can achieve an enhanced balance of hole- and electron injections, such that the device efficiency is significantly improved. Light-emitting diodes fabricated from P1, P2, P3, P4, P5, P6, and P7 with the configuration of Indium-Tin Oxide (ITO)/Poly (styrene sulfonic acid) doped poly (ethylenedioxythiophene) (PEDOT)/polymer/Ca/Al, emit bright green light with the maximum peak around 500 nm. For the device using the optimal polymer (P4) as emitting layer, a maximum brightness of 1300 cd/m(2) at 20 V and a maximum luminance efficiency of 0.325 cd/A can be obtained.

White electroluminescence from a poly(N-vinylcarbazole) layer doped with CdSe/CdS core-shell quantum dots

Hybrid organic/inorganic white light-emitting diodes (LEDs) were fabricated of semiconductor polymer poly(N-vinylcarbazole) (PVK) doped with CdSe/CdS core-shell semiconductor quantum dots (QDs). The device, with a structure of indium-tin-oxide (ITO)vertical bar 3,4-polyethylene-dioxythiophene- polystyrene sulfonate (PEDOT:PSS)vertical bar PVK:CdSe/CdS vertical bar Al, emitted a pure white light spanning the whole visible region from 400 to 800 nm. The Commission Internationale del'Eclairage coordinates (CIE) remained at x = 0.33, y = 0.34 at wide applied voltages. The maximum brightness and electroluminescence (EL) efficiency reached 180 cd m(-2) at 19 V and 0.21 cd A(-1) at current density of 2 mA cm(-2), respectively. The realization of the pure white light emission is attributed to the incomplete energy and charge transfer from PVK to CdSe/CdS core-shell QDs.

Performance improvement by charge trapping of doping fluorescent dyes in organic memory devices

We studied the memory effect in the devices consisting of dye-doped N, N'-di(naphthalene-1-yl)-N, N'-diphenyl-benzidine sandwiched between indium-tin oxide and Ag electrodes. It was found that the on/off current ratio was greatly improved by the doped fluorescent dyes compared with nondoping devices. A mechanism of charge trapping was demonstrated to explain the improvement of the memory effect. For the off state, the conduction process is dominated by the trapping current, which is a characteristic of the space-charge limited current, whereas the on state is dominated by the detrapping current, and interpreted by Poole-Frenkel emission.

High efficiency red organic light-emitting diodes based on microcavity structure

We demonstrate high efficiency red organic light-emitting diodes (OLEDs) based on a planar microcavity comprised of a dielectric mirror and a metal Mirror. The microcavity devices emitted red light at a peak wavelength of 610 nm with a full width at half maximum (FWHM) of 25 nm in the forward direction, and an enhancement of about 1.3 factor in electroluminescent (EL) efficiency has been experimentally achieved with respect to the conventional noncavity devices. For microcavity devices with the structure of distributed Bragg reflectors (DBR)/indium-tin-oxide(ITO)/V2O5/N,N'-di(naphthalene-1-yl)-N,N'-diphenyl-benzidine(NPB)/4-(dicy-anome-thylene)-2-t-butyl-6(1,1,7,7-tetrame-thyljulolidyl-9-enyl)-4H-pyran(DCJTB):tris(8-hydroxyquinoline) aluminium (Alq(3))/Alq(3)/LiF/Al, the maximum brightness arrived at 37000 cd/m(2) at a current density of 460.0 mA/cm(2), and the current efficiency and power efficiency reach 13.7 cd/A at a current density of 0.23 mA/cm(2) and 13.3 lm/W respectively.

NaCl/Ca/Al as an efficient cathode in organic light-emitting devices

An efficient cathode NaCl/Ca/Al used to improve the performance of organic light-emitting devices (OLEDs) was reported. Standard NM-bis(1-naphthyl)-NAP-diphenyl-1,1' biphenyl 4,4'-dimaine (NPB)/tris-(8-hydroxyquinoline) aluminum (Alq(3)) devices with NaCl/Ca/Al cathode showed dramatically enhanced electroluminescent (EL) efficiency. A power efficiency of 4.6 lm/W was obtained for OLEDs with 2 nm of NaCl and 10 nm of Ca, which is much higher than 2.0 lm/W, 3.1 lm/W, 2.1 lm/ W and 3.6 lm/W in devices using, respectively, the LiF (1 nm)/Al, LiF (1 nm)/Ca (10 nm)/Al, Ca (10 nm)/Al and NaCl (2 nm)/ Al cathodes. The investigation of the electron injection in electron-only devices indicates that the utilization of the NaCl/Ca/Al cathode substantially enhances the electron injection current, which in case of OLEDs leads to the improvement of the brightness and efficiency.

Efficient red organic light-emitting devices based on a europium complex

An efficient organic light-emitting device using a trivalent europium (Eu) complex Eu(Tmphen)(TTA)(3) (TTA=thenoyltrifluoroacetone, Tmphen=3,4,7,8-tetramethyl-1,10-phenanthroline) as the dopant emitter was fabricated. The devices were a multilayer structure of indium tin oxide/N,N-diphenyl-N,N-bis(3-methylphenyl)-1,1-biphenyl-4,4-diamine (40 nm)/ Eu complex:4,4-N,N-dicarbazole-biphenyl (1%, 30 nm)/2,9-dimethyl,4,7-diphenyl-1,10phenanthroline (20 nm)/AlQ (30 nm)/LiF (1 nm)/Al (100 nm). A pure red light with a peak of 612 nm and a half bandwidth of 3 nm, which is the characteristic emission of trivalent europium ion, was observed. The devices show the maximum luminance up to 800 cd/m(2), an external quantum efficiency of 4.3%, current efficiency of 4.7 cd/A, and power efficiency of 1.6 lm/W. At the brightness of 100 cd/m(2), the quantum efficiency reaches 2.2% (2.3 cd/A).

A dinuclear aluminum 8-hydroxyquinoline complex with high electron mobility for organic light-emitting diodes

A dinuclear aluminum 8-hydroxyquinoline complex (DAlq(3)) with improved electron mobility was designed for organic light-emitting diodes. The electron mobility in DAlq(3) was determined via transient electroluminescence (EL) from bilayer devices with structure of indium tin oxide (ITO)/N,N-'-di(naphthalene-1-yl)-N,N-'-diphenyl-benzidine (NPB)/DAlq(3)/Mg:Ag. It was found that the electron mobility in DAlq(3) is between 3.7-8.4x10(-6) cm(2)/Vs at electric fields ranging between 1.2x10(6) and 4.0x10(6) V/cm, which is a factor of two higher than that in Alq(3). The DAlq(3) also shows a higher EL efficiency of 2.2 cd/A (1.2 Lm/W), as compared to Alq(3) with an EL efficiency of 2.0 cd/A (1.0 Lm/W), which is attributed to more balanced electron and hole recombination due to the improved electron mobility of DAlq(3).

Mechanism and life study on polyaniline anti-corrosion coating

Solvent free polyaniline emeraldine base(EB) corrosion protection coating was prepared, employing aliphatic polyamine as solvent of EB as well as hardener of epoxy resin. This coating passed 2000h of salt fog test when the EB loading was about 1 wt%. The interaction between EB and iron indicated that EB acted as a "quasi-catalyst" to cause the formation of densed iron oxide film in the interface.

Study of methanol adsorption on mica, graphite and ITO glass by using tapping mode atomic force microscopy

Tapping mode atomic force microscopy (AFM) was applied to study the adsorption behavior of methanol on mica, highly oriented pyrolytic graphite (HOPG) and indium-tin oxide (ITO) coated glass substrates. On mica and HOPG substrates surfaces, the thin films of methanol with bilayer and multilayer were observed, respectively. The formation of irregular islands of methanol was also found on HOPG surface. On ITO surface only aggregates and clusters of methanol molecules were formed. The influence of sample preparation on the adsorption was discussed.

Synthesis of novel nitrogen- and sulfur-containing conjugated polymers used as hole-transporting materials for organic light-emitting diodes

Two series of highly soluble novel nitrogen- and sulfur-containing conjugated polymers were synthesized via an acid-induced self-polycondensation of functional monomers with methyl sulfinyl and aromatic groups. The well-defined structures of synthesized polymers were confirmed by their NMR and IR spectra. The highest occupied molecular orbital energy values for these materials, estimated by cyclic voltammetry, showed a broad range of values from about 5.0 to 5.2 eV used as hole-transport layers (HTL) in two-layer light-emitting diodes ITO/HTL/Alq(3)/Mg:Ag [ITO = indium tin oxide, and Alq(3) = tris(8-quinolinato) aluminum]. The typical turn-on voltage of these diodes was about 4-5 V. The maximum brightness of the device was about 3440 cd/m(2) at 20 V. The maximum efficiency was estimated to be 0.15 1m/W at 10 V.

A novel way to enhance electroluminescence performance based on soluble binary and ternary europium 1,1,1-trifluoroacetylacetonate

Five rare earth complexes (Gd(acae)(3), Gd(TFacaC)(3), Eu(acaC)(3), Eu(TFacaC)(3) and Eu(TFacaC)(3)bipy; acac, acetylacetone; TFacac, 1,1,1-trifluoroacetylacetone; bipy, 2,2'-bipyridyl) were synthesized. By comparing the phosphorescence spectra of Gd(acac)(3) and Gd(TFacac)(3) the effect of the replacement of hydrogen by fluorine was examined. Organic light-emitting devices (OLEDs) based on the corresponding europium complexes as emissive layers were also fabricated by the spin-coating method. The triple-layer-type device with the structure glass substrate/ITO (indium-tin oxide)/PVK [poly(N-vinylcarbazole)]/(PVKEu)-Eu-.(TFacac)(3)bipy:PBD[2-(4-bibipyyl)-5-(4-t-butylbipyl-1,3,4-oxadiazole)]/PBD/Al (aluminum) exhibits a brighter red luminescence than those devices with Eu(acac)(3) and Eu(TFacac)(3) complexes as emissive centers upon applying a d.c. voltage.

Red electroluminescent device with europium 1,1,1-trifluoroacetylacetonate complex as emissive center

By comparing the phosphorescence spectra of Gd(acac)(3) (acac: acetylacetone) and Gd(TFacac)(3) (TFacac: 1, 1, 1-trifluoro-acetylacetone), the effect of fluorine replacing of hydrogen was discussed. It can lower the triplet state energy of acac and make it more suitable to the D-5(1) energy state of europium. Organic electroluminescent (OEL) devices with corresponding europium complexes as emissive layers were fabricated. A triple laver-type device with a structure of glass substrate/indium-tin oxide (ITO)/poly(N-vinylcarbazole) (PVK)/PVK:Eu(TFacac)(3)phen:2-(4-biphenyl)-5-(4-t-butylphenyl)-1,3,4-oxadiazole (PBD)/PBD/Al exhibits bright red luminescence upon applying dc voltage, The device has the properties of a diode and the current-bias voltage line was obtained.

1.54 mu m infrared photoluminescence and electroluminescence from an erbium organic compound

Infrared emission at 1.54 mu m excited optically and electrically from an erbium organic compound tris(acetylacetonato)(1,10-phenanthroline) erbium [Er(acac)(3)(phen)] is observed. The rare-earth complex is dispersed into a polymer matrix of poly(N-vinylcarbazole) (PVK) to fabricate an electroluminescent (EL) device with an ITO/PVK:Er(acac)(3)(phen)/Al:Li/Ag structure, where ITO represents indium-tin-oxide-coated glass. The device shows infrared EL emission at 1.54 mu m, which suggests a simple and cheap method to obtain a light source for 1.54-mu m-wavelength devices in optical communications. (C) 2000 American Institute of Physics. [S0021-8979(00)00301-7].

A comparative study on the electroluminescence properties of some terbium beta-diketonate complexes

By comparing the phosphorescence spectra of Gd(acac)(3) (acac=acetylacetone), Gd(TFacac)3 (TFacac=1,1,1-trifluoroacetylacetone), the effects of fluorine replacement of hydrogen on the triplet state energy of the ligands were revealed. Fluorine can lower the triplet state energy of Hacac and make it more suitable for energy transfer towards the D-5(4) state of terbium. Organic electroluminescent devices (OELDs) with the corresponding trivalent terbium complexes as emissive layers were fabricated. Triple-layer-type devices with a structure of glass substrate/ITO (indium tin oxide)/PVK [poly(N-vinylcarbazole)]/PVK : Tb complex: PBD [2-(4-biphenyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole]/PBD/Al exhibit bright green luminescence upon applying a dc voltage. The luminance of a device with Tb(TFacac)(3)phen (1,10-phenanthroline) and Tb( TFacac) 3 as emissive layer is higher than that of the corresponding devices with Tb(acac)(3)(phen) and Tb(acac)(3) as emissive layers. The EL device with Tb(TFacac)(3)(phen) as emitter exhibits characteristic emission of Tb3+ ions with a maximum luminance of 58 cd m(-2) at 25 V.