High power AlGaInP laser diodes with zinc-diffused window mirror structure

The technology of zinc-diffusion to improve catastrophic optical damage (COD) threshold of compressively strained GaInP/AlGaInP quantum well laser diodes has been introduced. After zinc-diffusion, about 20-μm-long region at each facet of laser diode has been formed to serve as the window of the lasing light. As a result, the COD threshold has been significantly improved due to the enlargement of bandgap by the zinc-diffusion induced quantum well intermixing, compared with that of the conventional non-window structure. 40-mW continuous wave output power with the fundamental transverse mode has been realized under room temperature for the 3.5-μm-wide ridge waveguide diode. The operation current is 84 mA and the slope efficiency is 0.74 W/A at 40 mW. The lasing wavelength is 656 nm.

Design of a Tapered Lens for Semiconductor Laser to Single-Mode Fiber Coupling

The theoretical investigation of the coupling efficiency of a laser diode to a single mode fiber via a hemispherical lens on the tip of the tapered fiber in the presence of possible transverse offset and angular mismatch is reported.Without the misalignment,coupling efficiency increases with the decreasing of taper length.With the misalignment,this relation is that the coupling efficiency decreases with each kind of offset.

High Power 940 nm Al-free Active Region Laser Diodes and Bars with a Broad Waveguide

The 940 nm Al-free active region laser diodes and bars with a broad waveguide were designed and fabricated. The stuctures were grown by metal organic chemical vapour deposition. The devices show excellent performances. The maximum output power of 6.7 W in the 100 f^m broad-area laser diodes has been measured, and is 2. 5 times higher than that in the Al-containing active region laser diodes with a narrow waveguide and 1. 7 times higher than that in Al-free active region laser diodes with a narrow waveguide. The 19 % fill-factor laser diode bars emit 33 W, and they can operate at 15W with low degradation rates.

High temperature operation of 650nm AlGaInP quantum well laser diodes grown by LP-MOCVD

Low threshold current and high temperature operation of 650nm AlGaInP quantum well laser diodes grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) are reported in this paper. 650nm laser diodes with threshold current as low as 22-24mA at room temperature, and the operating temperature over 90 degrees C at CW output power 5 mW were achieved in this study. These lasers are stable during 72 hours burn in under 5mW at 90 degrees C.

High performance 1.55 mu m InGaAsP/InP strained layer quantum well laser diodes fabricated by MOCVD overgrowth method

High performance uncooled 1.55 mu m InGaAsP/InP strained layer quantum well (SL-QW) lasers grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) were reported in this paper. Whole MOCVD over growth method were applied in this work. The threshold currents of 5mA and the highest lasing temperature of 122 degrees C were obtained.

The study of single mode 650nm AlGaInP quantum well laser diodes for DVD

Single mode 650nm AlGaInP quantum well laser diodes grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) was reported in this paper. Selected buried rigewaveguid were applied for single mode operation especially for DVD use. The operating temperature over 90 degree at CW output power 5 mW was achieved.

Effect of rapid thermal annealing on electron emission and DX centers in strained InGaAs/GaAs single quantum well laser diodes

nThermal processing of strained ln(0.2)Ga(0.8)As/GaAs graded-index separate confinement heterostructure single quantum well laser diodes grown by molecular beam epitaxy is investigated. It was found that rapid thermal annealing can improve the 77 K photoluminescence efficiency and electron emission from the active layer, due to removal of nonradiative centers from the InGaAs/GaAs interface. Because of the interdiffusion of Al and Ga atoms, rapid thermal annealing increases simultaneously the density of DX centers in the AlGaAs graded layer. The current stressing experiments of post-growth and annealed laser diodes are indicative of a corresponding increase in the concentration of DX centers, suggesting that DX centers may be responsible for the degradation of laser diode performance.

Optical gain at 1550 nm from colloidal solution of Er3+-Yb3+ codoped NaYF4 nanocubes

We demonstrated optical amplification at 1550 nm with a carbon tetrachloride solution of Er3+-Yb3+ codoped NaYF4 nanocubes synthesized with solvo-thermal route. Upon excitation with a 980 nm laser diode, the nanocube solution exhibited strong near-infrared emission by the I-4(13/2) -> I-4(15/2) transition of Er3+ ions due to energy transfer from Yb3+ ions. We obtained the highest optical gain coefficient at 1550 nm of 0.58 cm(-1) for the solution with the pumping power of 200 mW. This colloidal solution might be a promising candidate as a liquid medium for optical amplifier and laser at the optical communication wavelength. (C) 2009 Optical Society of America

激光二极管抽运的国产Yb:YAG陶瓷激光器

研究了国产Yb:YAG陶瓷的激光输出特性。激光器采用激光二极管(LD)纵向同轴抽运Yb:YAG陶瓷样品,样品的掺杂原子数分数为1%,一端面镀940 nm和1030 nm双增透膜,另一端面镀1030 nm增透膜,激光器在1031 nm处获得了近红外激光输出。实验中分别测试了Yb:YAG陶瓷在不同输出透射率(T=4%,8%,10%)条件下的激光输出特性。整个实验过程中,激光器维持基横模运转。当输出透射率为10%,吸收的抽运功率为9 W时,激光器获得最大的激光输出功率为1.63 W,相应的斜率效率为23.2%。

Infrared luminescence properties of bismuth-doped barium silicate glasses

Infrared (IR) luminescence covering 1.1 to similar to 1.6 mu m wavelength region was observed from bismuth-doped barium silicate glasses, excited by a laser diode at 808 nm wavelength region, at room temperature. The peak of the IR luminescence appears at 1325 nm. A full width half-maximum (FWHM) and the lifetime of the fluorescence is more than 200 nm and 400 mu s, respectively. The fluorescence intensity increases with Al2O3 content, but decreases with BaO content. We suggest that the IR luminescence should be ascribed to the low valence state of bismuth Bi2+ or Bi+, and Al3+ ions play an indirect dispersing role for the infrared luminescent centers.

矩阵理论在半导体激光器耦合中的应用

傍轴近似下的光学矩阵理论，可以简化光束传输计算过程，使光学系统设计更为方便。将ABCD变换矩阵方法引入到耦合光学系统的设计中，运用高斯光束的ABCD法则，详尽地给出了某一耦合方式下的半导体激光器耦合入单模光纤系统的设计；另一方面，对系统的耦合损耗与耦合距离的关系进行了理论计算，并把计算结果与最近的实验报道做了比较，它们基本相吻合，说明此方法是可行的、合理的。从整个设计及理论计算来看，ABCD矩阵方法减少了复杂的计算，从而简化了设计过程，与通常的衍射计算相比，它不失为一种方便、有效的方法，同时它对生产半导体

用于大范围高精度实时位移测量的半导体激光干涉仪

现有的半导体激光干涉仪存在测量精度与测量范围的矛盾。本文提出一种新的实时位移测量半导体激光干涉仪，并分析了干涉仪的测量原理。首先提出一种新的解相算法，它通过两路实时相位探测电路从干涉信号中得到待测量相位，消除了光强波动、初始光程差、电路放大倍数、调制深度、Bessel函数等参数对测量精度的影响，提高了测量精度。其次，提出一种扩大测量范围的技术，并用解包裹电路得到真实相位和待测量的位移, 将测量范围从半个波长提高到几个波长。在实验中，测得喇叭的峰峰值为2361.7nm，重复测量精度为2.56nm，测量时间为

Small-dynamic-angle measurement using tangent relationship and phase-modulating technique

A method using two prisms for measurement of small dynamic angles is proposed in which the measurement is based on a simple tangent equation and a phase-modulating interferometer with a laser diode to measure dynamic optical path differences with higher accuracy. Owing to the simple tangent equation, the symmetry requirement on the two prisms in the optical configuration is eliminated, and easy measurement of the separations between two parallel beams with a position-sensitive detector is achieved. Small-dynamic-angle measurements are experimentally demonstrated with high accuracy. (C) 2007 Society of Photo-Optical Instrumentation Engineers.

ABCD matrix for reflection and refraction of Gaussian beams at the surface of a parabola of revolution

We report the formulation of an ABCD matrix for reflection and refraction of Gaussian light beams at the surface of a parabola of revolution that separate media of different refractive indices based on optical phase matching. The equations for the spot sizes and wave-front radii of the beams are also obtained by using the ABCD matrix. With these matrices, we can more conveniently design and evaluate some special optical systems, including these kinds of elements. (c) 2005 Optical Society of America