332 resultados para Ho:YAG ceramic


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We demonstrate, for the first time as far as Re known, a passively Q-switched operation of a Nd:YVO4 laser in which a Cr4+:YAG crystal and a laser-diode bar are used as the saturable absorber and the pump source, respectively. Stable laser pulses as short as 28 ns with 20-mu J energy can be generated with this laser, which has the advantages of simplicity, high efficiency, and good long-term stability. (C) 1997 Optical Society of America.

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By using a continuous-wave Ti:sapphire laser as a pumping source, we demonstrated a passively Q-switched Yb:YAG laser at room temperature with Cr4+:YAG as the saturable absorber. We achieved an average output power of as much as 55 mW at 1.03 mum with a pulse width (FWHM) as short as 350 ns. The initial transmission of the Cr4+:YAG has an effect on the pulse duration (FWHM) and the repetition rate of the Yb:YAG passively Q-switched laser. The Yb:YAG crystal can be a most promising passively Q-switched laser crystal for compact, efficient, solid-state lasers. (C) 2001 Optical Society of America.

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By use of a laser diode as a pump source, a self-Q-switched laser from a Cr,Nd:YAG crystal is demonstrated. The output Q-switched traces are very stable, the threshold pump power is 3.5 W, the pulse duration is 50 ns, and the slope efficiency is as high as 20%. In addition, the pulse width remains constant while the pulse repetition rate Varies with pump power. (C) 2000 Optical Society of America OCIS codes: 140.0140, 140.2020, 140.3380, 140.3480, 140.3540, 140.3580.

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Infrared (1.2-1.6 mum) luminescence in a yttrium aluminium garnet (YAG) crystal, co-doped with Yb (10 at.%) and Cr (0.05 at.%) ions, was investigated under CW laser diode pumping (lambda = 940 nm). The Cr4+ emission band was observed with its peak at 1.35 mum and measured to be about 6% with respect to Yb3+ IR luminescence (lambda = 1.03 mum). Analysis of the crystal absorption and luminescence spectra allows one to conclude that Yb3+-Cr4+ energy transfer is a mechanism responsible for the B-3(2)(T-3(2))-B-3(1)((3)A(2)) emission of Cr4+ ions. This crystal is promising as an efficient source of the near infrared emission. (C) 2004 Elsevier B.V. All rights reserved.

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用脉冲电子束激发测量了不同Yb^3+掺杂浓度的Yb:YAG晶体的红外(IR)闪烁发光性能。Yb:YAG晶体的IR闪烁发光具有高的光产额和长的衰减时间,但存在浓度猝灭效应和温度依赖关系。Yb:YAG晶体的IR闪烁性能还与晶体品质有关,相同掺杂浓度的Yb:YAG晶体,品质优异的会获得更高的光产额。这一初步的研究成果表明,部分掺Yb^3+晶体有可能用于医学成像装置。

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研究了Yb:YAG晶体的合作发光现象。当用940hm的近红外光激发时,Yb:YAG晶体有明显的上转换蓝色发光。实验发现498nm的蓝色发光强度与激发功率的平方成正比,而且Yb^3+掺杂浓度越高,蓝色发光越强。分析表明这是Yb^3+间强的相互作用导致的合作发光,是由于Yb^3+在共价性的YAG基质中,它的4f^I3电子易于与近邻离子发生相互作用导致的。

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The fluorescence emission spectra of Cr:Yb:YAG crystal are measured and the effective stimulated emission cross section of the crystal are obtained from -80 degrees C to +80 degrees C. A linear temperature dependence between -80 degrees C and +80 degrees C is reported for the 1.03 mu m peak stimulated emission cross section of Cr:Yb:YAG crystal. (c) 2004 Elsevier B.V. All rights reserved.

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Photoluminescence spectrum of Ce:YAG single crystal was studied employing vacuum ultraviolet (VUV) synchrotron radiation. Intrinsic absorption edge at about 52,000 cm(-1) was observed in the absorption spectrum. From the VUV excitation spectrum, the energy of the highest d-component of 53,191 cm(-1) (188 nm) for the Ce3+ ions in YAG was obtained at 300 K. The disappearance of the third 5d level at 37,735 cm(-1) (265 nm) in absorption and excitation spectra in our samples may be due to the impurity Fe3+ ions absorption. (C) 2006 Elsevier Ltd. All rights reserved.

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EU3+ -doped Y3Al5O12 (YAG:Eu3+) phosphors were synthesized by a facile sol-gel combustion method. In this process, citric acid traps the constituent cations and reduces the diffusion length of the precursors. YAG phase is obtained through sintering at 900 degrees C for 2h. There were no intermediate phases such as YAlO3 (YAP) and Y4Al2O9 (YAM) observed. The charge transfer band of nanocrystalline phosphors shows a shift toward the high-energy side, compared with that of amorphous ones due to lower covalency of Eu-O bond for nanocrystalline phosphors. The higher concentration quenching in YAG:EU3+ nanophosphors may be caused by the confinement effect on resonant energy transfer of nanocrystalline. It also indicates that the sol-gel combustion synthesis method provides a good distribution of Eu3+ activators in YAG host. (c) 2005 Elsevier B.V. All rights reserved.

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High-quality Ce3+-doped Y3Al5O12 (YAG:Ce3+) phosphors were synthesized by a facile sol-gel combustion method. In this sol-gel combustion process, citric acid acts as a fuel for combustion, traps the constituent cations and reduces the diffusion length of the precursors. The XRD and FT-IR results show that YAG phase can form through sintering at 900 degrees C for 2 h. This temperature is much lower than that required to synthesize YAG phase via the solid-state reaction method. There were no intermediate phases such as YAlO3 (YAP) and Y4Al2O9 (YAM) observed in the sintering process. The average grain size of the phosphors sintered at 900-1100 degrees C is about 40 nm. With the increasing of sintering temperature, the emission intensity increases due to the improved crystalline and homogeneous distribution of Ce3+ ions. A blue shift has been observed in the Ce3+ emission spectrum of YAG:Ce3+ phosphors with increasing sintering temperatures from 900 to 1200 degrees C. It can be explained that the decrease of lattice constant affects the crystal field around Ce3+ ions. The emission intensity of 0.06Ce-doped YAG phosphors is much higher than that of the 0.04Ce and 0.02Ce ones. The red-shift at higher Ce3+ concentrations may be Ce-Ce interactions or variations in the unit cell parameters between YAG:Ce3+ and YAG. It can be concluded that the sol-gel combustion synthesis method provides a good distribution of Ce3+ activators at the molecular level in YAG matrix. (c) 2005 Elsevier B.V. All rights reserved.

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Y3Al5O12:Eu nanophosphors were synthesized by a gel combustion method. The structure of phosphors was characterized by XRD and FTIR. YAG phase came to occur when YAG:Eu precursors were sintered at 800 ℃, although the phase was mainly amorphous. The organ

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The fluorescence emission spectra of Cr:Nd:YAG crystal are measured and the effective stimulated emission cross-section of the crystal is obtained from -80 to +80 degrees C. A linear temperature dependence between -80 and +80 degrees C is reported for the 1.064-mu m peak stimulated emission cross-section of Cr:Nd:YAG crystal. (C) 2005 Elsevier Ltd. All rights reserved.

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采用石墨电阻加热的温梯法生长了V:YAG晶体,晶体的不同部位呈现两种不同的颜色:浅绿色和黄褐色.通过对比分析不同颜色V:YAG晶体的室温吸收光谱,推断出石墨发热体高温下扩散出来的C可以起到还原作用,提高晶体中V^3+tetra离子的浓度,同时诱导了F心的形成.在1300℃下,对不同颜色的V:YAG晶体进行真空退火处理,发现处于八面体格位中的V^3+离子在热激发作用下与近邻的四面体格位Al^3+离子存在置换反应,由此产生一定浓度的四面体格位V^3+离子.同时,F心在退火过程中被完全消除,释放出来的自由电子被

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A V:YAG single crystal was grown by the temperature gradient technique (TGT) with graphite-heating elements. The as-grown crystal has different colorations of light green and yellow brown in different parts. Distribution of vanadium in three samples with different colorations was determined by inductively coupled plasma-mass spectrometry. From the absorption spectrum of the yellow-brown part with peaks at 370, 820 and 1320nm, we can deduce that the reducing atmosphere of carbon diffused from the heating elements can increase the concentration of tetrahedral V3+ ions and induce F color centers. All three samples exhibited light-green color after annealing in vacuum or H-2 atmospheres. In the vacuum annealing process, the V3+ ions in tetrahedral positions were enhanced through two methods: one method is the exchanging of octahedral V3+ and tetrahedral Al3+ ions in neighboring sites under thermal excitation, the other is that F color centers were thoroughly eliminated and the escaped free electrons could be captured by V ions with higher valance states to further improve the concentration of tetrahedral V3+ ions. Besides the two mechanisms, the H-2 annealing process greatly improved the V-tetra(3+) ions through the reduction effect of H-2. (c) 2006 Elsevier B.V. All rights reserved.

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由于Nd^3+离子半径0.112nm和Y^3+离子半径0.101nm相差10.9%,使得Nd^3+离子非常难于进入YAG晶体中。我们用温度梯度法生长了大尺寸高浓度(2.8 at%)的Nd:YAG晶体,同时与用提拉法Nd:GGG晶体进行了比较。分析了高浓度掺杂Nd:GGG和Nd:YAG晶体浓度猝灭问题。研究了不同浓度掺杂的猝灭效应。在同样的掺杂浓度下,我们发现它们的猝灭程度不同,其原因是两种晶体中△Emism(-)和(+) △Emism(+) 不同。