变形镜对千赫兹掺钛蓝宝石飞秒激光频谱相位补偿

尝试用光谱展宽的方法从频谱相位(而非时域相位)的角度利用变形反射镜来补偿1kHz飞秒激光系统输出光路的频谱相位畸变，从而提高飞秒激光脉冲的时域强度衬比度，改善其光束质量。频谱相位补偿实验是在一台1kHz掺钛蓝宝石飞秒激光系统输出光路中，针对超短脉冲光束通过传输介质后的频谱相位畸变，引入变形反射镜进行补偿。应用频谱相位干涉直接电场重构(SPIDER)方法和仪器作为测量手段，建立了一套相位测量补偿系统。实验结果表明用变形反射镜可使激光脉冲的相位畸变得到较好的补偿，脉冲的光束质量得到改善。这种方法的主要思想就是

双色激光场中激光强度和脉宽对线性多原子分子离子电离的影响

利用强激光场电离和离解分子来研究分子激发态的波包结构是强场物理的重要研究方向。利用短时指数传播子对称分割法和快速傅里叶变换技术。数值求解了一维含时Schr（oe）dinger方程，探讨了双色激光场中激光的基波和谐波强度之间的不同配比以及脉宽对线性多原子分子离子电离的影响。理论计算结果表明：基波和谐波的相对相位为π时，尽管随着激光的基波和谐波强度之间配比的变化，电离几率随原子间距变化的趋势基本保持不变，但在一定的激光基波强度下(1．2×10^13～1．2×10^15W／cm^2)，激光基波强度的变化可以明显

外加高压电场下空气中激光等离子体通道寿命研究

通过对飞秒激光在空气中产生的等离子体通道两端外加高压,来研究通道的寿命变化情况。实验得到,当在等离子体通道两端外加高压时(350 kV/m),等离子体通道寿命延长了近3倍。理论模拟和分析结果表明在外加电场条件下,碰撞电离得到增强,吸附作用相对减弱,解离复合系数随着电子平均能量的增加而下降的趋势更为剧烈,这进一步引起了等离子体通道寿命的延长。实验结果与理论分析共同表明了利用外加电场对空气中激光等离子体通道寿命进行延长的可行性。

Fabrication of microelectrodes deeply embedded in LiNbO3 using a femtosecond laser

We present a novel technique to fabricate deeply embedded microelectrodes in LiNbO3 using femtosecond pulsed laser ablation and selective electroless plating. The fabrication process mainly consists of four steps, which are (1) micromachining of microgrooves on the surface of LiNbO3 by femtosecond laser ablation; (2) formation of AgNO3 films on substrates; (3) scanning the femtosecond laser beam in the fabricated microgrooves for modi. cation of the inner surfaces; and (4) electroless copper plating. The void-free electroless copper plating is obtained with appropriate cross section of microgrooves and uniform initiation of the autocatalytic deposition on the inner surface of grooves. The dimension and shape of the microelectrodes could be accurately controlled by changing the conditions of femtosecond laser ablation, which in turn can control the distribution of electric field inside LiNbO3 crystal for various applications, opening up a new approach to fabricate three-dimensional integrated electro-optic devices. (C) 2008 Elsevier B. V. All rights reserved.

Short-pulse laser absorption in very steep plasma density gradients

An analytical fluid model for resonance absorption during the oblique incidence by femtosecond laser pulses on a small-scale-length density plasma [k(0)L is an element of(0.1,10)] is proposed. The physics of resonance absorption is analyzed more clearly as we separate the electric field into an electromagnetic part and an electrostatic part. It is found that the characteristics of the physical quantities (fractional absorption, optimum angle, etc.) in a small-scale-length plasma are quite different from the predictions of classical theory. Absorption processes are generally dependent on the density scale length. For shorter scale length or higher laser intensity, vacuum heating tends to be dominant. It is shown that the electrons being pulled out and then returned to the plasma at the interface layer by the wave field can lead to a phenomenon like wave breaking. This can lead to heating of the plasma at the expanse of the wave energy. It is found that the optimum angle is independent of the laser intensity while the absorption rate increases with the laser intensity, and the absorption rate can reach as high as 25%. (c) 2006 American Institute of Physics.

Surface planar ion chip for linear radio-frequency Paul traps

We propose a surface planar ion chip which forms a linear radio frequency Paul ion trap. The electrodes reside in the two planes of a chip, and the trap axis is located above the chip surface. Its electric field and potential distribution are similar to the standard linear radio frequency Paul ion trap. This ion trap geometry may be greatly meaningful for quantum information processing.

TWO-DIMENSIONAL ARRAY OF ION TRAPS ON A PLANAR CHIP

We investigate a planar ion chip design with a two-dimensional array of linear ion traps for the scalable quantum information processor. The segmented electrodes reside in a single plane on a substrate and a grounded metal plate, a combination of appropriate rf and DC potentials are applied to them for stable ion confinement, and the trap axes are located above the surface at a distance controlled by the electrodes' lateral extent and the substrate's height as discussed. The potential distributions are calculated using static electric field qualitatively. This architecture is conceptually simple and many current microfabrication techniques are feasible for the basic structure. It may provide a promising route for scalable quantum computers.

强外加电场与大调制度下光折变动力学光栅形成研究

强外加电场与大调制度在光折变效应的研究中已经得到了广泛应用。采用PDECOL算法, 严格求解光折变带输运方程, 得到外加电场时不同调制度下光折变晶体中随时间变化的空间电荷场、载流子浓度, 并讨论了外加电场对它们的影响。通过将物质方程与耦合波方程联立数值求解, 可得到光折变光栅形成过程中两波耦合增益系数以及光束条纹相位的变化。模拟结果表明, 在强外加电场作用下, 两束记录光之间的光强与相位耦合都得到了增强, 而原有的解析式忽视了强外加电场与大调制度对空间电荷场相位耦合的影响, 此时不再适用。同时发现折射率光

组合外加电场提高Fe：LiNbO3中90°记录体全息的衍射效率

针对90°全息记录结构的特殊性，在记录和读出阶段分别施加不同极性的外加电场，实现了Fe：LiNbO3晶体中高衍射效率的全息记录和读出。在库赫塔列夫（Kukhtarev）方程基础上引人两维耦合波理论，对组合外加电场提高掺铁铌酸锂晶体光折变特性的机理进行了探讨。实验和理论计算结果都表明这种分别在记录和读出过程施加不同极性组合的外加电场是在Fe：LiNbO3中实现高衍射效率90°记录结构体全息的有效技术方案。

铌酸锂晶体紫外激光诱导畴反转实验研究

报道了在铌酸锂晶体中实现紫外激光诱导畴反转的实验。在一定外加均匀电场下，铌酸锂晶体中通过波长365nm的紫外激光，由于紫外光的照射降低了矫顽电场只在通光区实现畴反转。研究表明，该方案可用于周期性极化铌酸锂的制备，并有望成为制作精细周期性畴结构的有效技术方案。

紫外激光诱导近化学计量比钽酸锂晶体铁电畴反转

对紫外激光诱导近化学计量比钽酸锂晶体铁电畴反转进行了实验研究。波长为351 nm的连续紫外激光被聚焦在近化学计量比钽酸锂晶体的-z表面,同时沿与晶体自发极化相反的方向施加均匀外电场。实验证实紫外激光辐照可以有效地降低晶体畴反转所需的矫顽电场,采用数字全息干涉测量技术检测证实在激光辐照区域实现局域畴反转。研究表明采用紫外激光诱导可以实现对近化学计量比钽酸锂晶体铁电畴反转的局域控制。提出了物理机理的理论分析,认为外电场和激光辐照场的共同作用在晶体内部产生高浓度、大尺寸的缺陷结构,缺陷一定程度上降低畴体成核和畴

Electrochromic effect in domain-inversion process LiNbO3 : Ru : Fe crystals

A reversible electrochromic effect accompanying domain-inversion during the electrical poling process in LiNbO3: Ru: Fe crystals at room temperature has been observed. In electrode area, both electrochromism and domain-inversion occur alternately, and electrochromism is also reversible during back-switch poling, which is experimentally verified and whose mechanism is briefly explained using a microstructure ferroelectric model. In addition, because of the enhancing elcctrochromic effect, different from the undoped LiNbO3 crystals, the coercive riled (21.0 kV/mm or so) measured in LiNbO3: Ru: Fe is lower than its breakdown field, thus providing a possible new technique for realizing the domain-inversion by constant electric field rather than a pulsed one.

入射光偏振方向对LiNbO3晶体近光轴电光调制的影响

分析了在垂直LiNbO3晶体光轴方向加电压，光沿近光轴方向传播时，入射光偏振方向对电光调制器的影响。通过计算加电场后双折射光程差的变化和偏光振动方向的转动，画出在正交偏振镜下不同起偏方向的锥光干涉图，得到干涉图随起偏方向变化的规律：由偏光振动方向转动引起的消光区域随起偏方向的转动而转动，在起偏和检偏方向上始终消光，在与起偏方向成±45°角方向始终全透光，并且消光线的交点即感应双光轴头不随起偏方向的转动而变化，始终在折射率变大的感应主轴上。

Electrochromism accompanying ferroelectric domain inversion in congruent RuO2 : LiNbO3 crystal

Electrochromic phenomena accompanying the ferroelectric domain inversion in congruent RuO2-doped z-cut LiNbO3 crystals at room temperature are observed in experiments. During the electric poling process, the electrochromism accompanies the ferroelectric domain inversion simultaneously in the same poled area. The electrochromism is completely reversible when the domain is inverted from the reverse direction. The influences of electric field and annealing conditions on domain inversion and electrochromism are also discussed. We propose the reasonable assumption that charge redistribution within the crystal structure caused by domain inversion is the source for electrochemically oxidation and reduction of Ru ion to produce the electrochromic effect. (c) 2005 Optical Society of America.

Reversible electrochromic effect accompanying domain-inversion in LiNbO3 : Ru : Fe crystals

A reversible electrochromic effect during the electrical poling process in LiNbO3:Ru:Fe crystals at room temperature is observed. In electrode area, both electrochromism and domain-inversion occur mutually and electrochromism is reversible during back-switch poling, which are experimentally verified, and a microstructure model to explain the mechanism is proposed. In addition, different from the undoped LiNbO3 crystals, the breakdown field (> 25.0 kV/mm) is higher than the coercive (21.0 kV/mm) measured in LiNbO3:Ru:Fe, which proves a possible new technique to realize domain-inversion by constant electric field rather than pulsed one. (c) 2005 American Institute of Physics.